Elucidation and control of the mechanism of magnetism in magnetic semiconductors with the high Curie temperature
| Project/Area Number |
24860014
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied physics, general
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| Research Institution | University of Tsukuba |
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Principal Investigator |
AKIYAMA Ryota 筑波大学, 数理物質系, 助教 (40633962)
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| Project Period (FY) |
2012-08-31 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | ゲート素子 / スピントロニクス / 電界効果 / 磁性 / イオン液体 / 強磁性 / カルコゲナイド / 磁性半導体 / 酸化膜 / 界面効果 / 磁気異方性 |
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| Research Abstract |
In this theme, we aimed to develop the spin-device showing low consumption of energy and enabling high speed and large capacity information processing using magnetic semiconductors with high Curie temperature. The magnetism in the device can be controlled by applying gate voltages. Before (Zn,Cr)Te, we successfully modulated the magnetism (magnitude of the magnetization) in Cr1-xTe whose magnetization shows the distinct curve by making gating devices using an ion liquid. Applying that method to (Zn,Cr)Te, we successfully modulated the magnetism in (Zn,Cr)Te, especially coercivity by gate voltages. These results led the clues of the magnetism in (Zn,Cr)Te.
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Report
(3 results)
Research Products
(24 results)
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[Presentation] DEPOSITION AND CHARACTERIZATION OF ALUMINUM NITRIDE THIN FILMS AS AN INSULATOR FOR GATE-CONTROL DEVICES OF MAGNETISM2013
Author(s)
H. Oikawa, I. Harayama, K. Nagashima, O. Sekiba, Y. Ashizawa, A. Tsukamoto, K. Nakagawa, R. Akiyama, K. Kanazawa, S. Kuroda, and N. Ota
Organizer
MORIS 2013
Place of Presentation
Omiya sonic city (埼玉県大宮市)
Related Report
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