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Development of extremely flexible and transparent carbon nanotube devices

Research Project

Project/Area Number 24860018
Research Category

Grant-in-Aid for Research Activity Start-up

Allocation TypeSingle-year Grants
Research Field Thermal engineering
Research InstitutionNational Institute for Materials Science

Principal Investigator

AIKAWA SHINYA  独立行政法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, ポスドク研究員 (40637899)

Project Period (FY) 2012-08-31 – 2014-03-31
Project Status Completed (Fiscal Year 2013)
Budget Amount *help
¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Keywordsカーボンナノチューブ / フレキシブルエレクトロニクス / ポリマー絶縁膜 / 透明導電膜 / プラスチック基板
Research Abstract

A carbon-nanotube field-effect transistor (CNT-FET) generally shows p-type conduction, however, it can be converted to ambipolar or unipolar n-type behavior by polymer coating even under an ambient condition. In this study, carrier-type conversion of CNT-FETs using a water-soluble poly-vinyl alcohol (PVA) was demonstrated. Based on the capacitance-voltage characteristics, it is found that the PVA film has positive charges in high density. The conversion is possibly due to the existence of the induced charges, which was formed at the CNT/PVA interfaces by the polymer coating.

Report

(3 results)
  • 2013 Annual Research Report   Final Research Report ( PDF )
  • 2012 Annual Research Report
  • Research Products

    (64 results)

All 2014 2013 2012 Other

All Journal Article (9 results) (of which Peer Reviewed: 9 results) Presentation (20 results) Book (2 results) Remarks (3 results) Patent(Industrial Property Rights) (30 results) (of which Overseas: 17 results)

  • [Journal Article] Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe_22014

    • Author(s)
      M. Yamamoto, S. T. Wang, M. Ni, Y.-F. Lin, S.-L. Li, S. Aikawa, W.-B. Jian, K. Ueno, K. Wakabayashi, K. Tsukagoshi
    • Journal Title

      ACS Nano

      Volume: vol.8 Issue: 4 Pages: 3895-3903

    • DOI

      10.1021/nn5007607

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability2014

    • Author(s)
      T. Kizu, S. Aikawa, N. Mitoma, M. Shimizu, X. Gao, M.-F. Lin, T. Nabatame, K Tsukagoshi
    • Journal Title

      Appl. Phys. Lett

      Volume: vol.104 Issue: 15 Pages: 152103-152103

    • DOI

      10.1063/1.4871511

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Stable amorphous In_2O_3-based thin-film transistors by incorporating SiO_2 to suppress oxygen vacancies2014

    • Author(s)
      N. Mitoma, S. Aikawa, X. Gao, T. Kizu, M. Shimizu, M.-F. Lin, T. Nabatame, K. Tsukagoshi
    • Journal Title

      Appl. Phys. Lett

      Volume: vol.104 Issue: 10 Pages: 102103-102103

    • DOI

      10.1063/1.4868303

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effects of dopants in InO_x-based amorphous oxide semiconductors for thin-film transistor applications2013

    • Author(s)
      S. Aikawa, T. Nabatame, K. Tsukagoshi
    • Journal Title

      Appl. Phys. Lett

      Volume: vol.103 Issue: 17 Pages: 172105-172105

    • DOI

      10.1063/1.4822175

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effect of Gas Pressure on the Density of Horizontally Aligned Single-Walled Carbon Nanotubes Grown on Quartz Substrates2013

    • Author(s)
      T. Inoue, D. Hasegawa, S. Badar, S. Aikawa, S. Chiashi, S. Maruyama
    • Journal Title

      Journal of Physical Chemistry C

      Volume: 117 Issue: 22 Pages: 11804-11810

    • DOI

      10.1021/jp401681e

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Thin-film transistors fabricated by low-temperature process based on Ga- and Zn-free amorphous oxide semiconductor2013

    • Author(s)
      S. Aikawa, P. Darmawan, K. Yanagisawa, T. Nabatame, Y. Abe, K. Tsukagoshi
    • Journal Title

      Appl. Phys. Lett

      Volume: vol.102 Issue: 10 Pages: 102101-102101

    • DOI

      10.1063/1.4794903

    • Related Report
      2013 Final Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of Inrush Current on Carbon Nanotube Synthesis from Xylene by Liquid-Phase Pulsed Arc Method Using Copper Electrodes2013

    • Author(s)
      T. Kizu, S. Aikawa, K. Takekoshi, E. Nishikawa
    • Journal Title

      e-Journal of Surface Science and Nanotechnology

      Volume: 11 Issue: 0 Pages: 8-12

    • DOI

      10.1380/ejssnt.2013.8

    • NAID

      130004438846

    • ISSN
      1348-0391
    • Related Report
      2013 Final Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Influence of Pulse Condition in the Synthesis of Carbon Nanotubes Containing Tungsten by Arc Discharge in Water2012

    • Author(s)
      K. Takekoshi, T. Kizu, S. Aikawa, M. Kanda, E. Nishikawa
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: vol.51 Issue: 12R Pages: 125102-125102

    • DOI

      10.1143/jjap.51.125102

    • NAID

      40019527655

    • Related Report
      2013 Final Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Temperature dependent thermal conductivity increase of aqueous nanofluid with single walled carbon nanotube inclusions2012

    • Author(s)
      S. Harish, K. Ishikawa, E. Einarsson, S. Aikawa, T. Inoue, P. Zhao, M. Watanabe, S. Chiashi, J. Shiomi, S. Maruyama
    • Journal Title

      Materials Express

      Volume: 2 Issue: 3 Pages: 213-223

    • DOI

      10.1166/mex.2012.1074

    • Related Report
      2013 Final Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Presentation] PE-ALD法で作製したAl2O3絶縁膜を用いたIGZO-TFTの電気特性2014

    • Author(s)
      栗島一徳,生田目俊秀,清水麻希,相川慎也,塚越一仁,大井暁彦,知京豊裕,小椋厚志
    • Organizer
      2014年第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学,神奈川
    • Year and Date
      2014-03-19
    • Related Report
      2013 Final Research Report
  • [Presentation] PE-ALD法で作製したAl2O3絶縁膜を用いたIGZO-TFTの電気特性の変化2014

    • Author(s)
      栗島一徳,生田目俊秀,清水麻希,相川慎也,塚越一仁,大井暁彦,知京豊裕,小椋厚志
    • Organizer
      第19回ゲートスタック研究会
    • Place of Presentation
      ニューウェルシティー湯河原,静岡
    • Year and Date
      2014-01-24
    • Related Report
      2013 Final Research Report
  • [Presentation] PE-ALD法で作製したAl2O3絶縁膜を用いたIGZO-TFTの電気特性の変化2014

    • Author(s)
      栗島一徳,生田目俊秀,清水麻希,相川慎也,塚越一仁,大井暁彦,知京豊裕,小椋厚志
    • Organizer
      第19回 ゲートスタック研究会
    • Place of Presentation
      ニューウェルシティー湯河原(静岡)
    • Related Report
      2013 Annual Research Report
  • [Presentation] PE-ALD法で作製したAl2O3絶縁膜を用いたIGZO-TFTの電気特性2014

    • Author(s)
      栗島一徳,生田目俊秀,清水麻希,相川慎也,塚越一仁,大井暁彦,知京豊裕,小椋厚志
    • Organizer
      2014年春季 応用物理学会
    • Place of Presentation
      青山学院大学(神奈川)
    • Related Report
      2013 Annual Research Report
  • [Presentation] Influence of Al2O3 Gate Dielectric on Transistor Properties for Igzo Thin Film Transistor2014

    • Author(s)
      K. Kurishima, T. Nabatame, M. Shimizu, S. Aikawa, K. Tsukagoshi, A. Ohi, T. Chikyow, A. Ogura
    • Organizer
      225th ECS Meeting
    • Place of Presentation
      Hilton Bonnet Creek (Orlando, Florida, USA)
    • Related Report
      2013 Annual Research Report
  • [Presentation] Influence of electrical properties for IGZO TFT with Al2O3 gate insulators by PE-ALD method2014

    • Author(s)
      K. Kurishima, T. Nabatame, M. Shimizu, S. Aikawa, K. Tsukagoshi, A. Ohi, T. Chikyo, A. Ogura
    • Organizer
      14th International Conference on Atomic Layer Deposition 2014
    • Place of Presentation
      Hotel Granvia Kyoto (Kyoto, Japan)
    • Related Report
      2013 Annual Research Report
  • [Presentation] Highly Stable n-Doped Graphene Field-Effect Transistors via Polyvinyl Alcohol Films2013

    • Author(s)
      S.J. Kim, T. Thurakitseree, S. Aikawa, T. Inoue, S. Chiashi, S. Maruyama
    • Organizer
      5th International Conferences on Recent Progress in Graphene Research
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2013-09-12
    • Related Report
      2013 Final Research Report
  • [Presentation] Transport characteristics for nitrogen-doped horizontally aligned single-walled carbon nanotubes2013

    • Author(s)
      S.J. Kim, T. Thurakitseree, S. Aikawa, T. Inoue, S. Chiashi, S. Maruyama
    • Organizer
      4th A3 Symposium on Emerging Materials : Nanomaterials for Energy and Electronics
    • Place of Presentation
      Jeju Island, Korea
    • Related Report
      2013 Final Research Report
  • [Presentation] Highly Stable n-Doped Graphene Field-Effect Transistors via Polyvinyl Alcohol Films2013

    • Author(s)
      S.J. Kim, P. Zhao, S. Aikawa, E. Einarsson, S. Chiashi, S. Maruyama
    • Organizer
      5th International Conferences on Recent Progress in Graphene Research
    • Place of Presentation
      Tokyo Institute of Technology (Tokyo, Japan)
    • Related Report
      2013 Annual Research Report
  • [Presentation] Transport characteristics for nitrogen-doped horizontally aligned single-walled carbon nanotubes2013

    • Author(s)
      S.J. Kim, T. Thurakitseree, S. Aikawa, T. Inoue, S. Chiashi, S. Maruyama
    • Organizer
      4th A3 Symposium on Emerging Materials: Nanomaterials for Energy and Electronics
    • Place of Presentation
      Daemyung Resort (Jeju Island, Korea)
    • Related Report
      2013 Annual Research Report
  • [Presentation] Single-walled Carbon Nanotube/Silicon Heterojunction Photovoltaic Cell2012

    • Author(s)
      K. Cui, S. Omiya, P. Zhao, T. Thurakitseree, S. Aikawa, S. Chiashi, S. Maruyama
    • Organizer
      2012 MRS Fall Meeting
    • Place of Presentation
      Boston, Massachusetts, USA
    • Year and Date
      2012-11-29
    • Related Report
      2013 Final Research Report
  • [Presentation] Fabrication of Flexible Graphene Field-Effect Transistors with Single-Walled Carbon Nanotube Electrodes2012

    • Author(s)
      S.J. Kim, S. Aikawa, P. Zhao, B. Hou, E. Einarsson, S. Chiashi, S. Maruyama
    • Organizer
      2012 MRS Fall Meeting
    • Place of Presentation
      Boston, Massachusetts, USA
    • Year and Date
      2012-11-29
    • Related Report
      2013 Final Research Report
  • [Presentation] Influence of Polymer Coating on Device Properties of Carbon Nanotube Field-Effect Transistors2012

    • Author(s)
      S. Aikawa, T. Inoue, E. Einarsson, S. Chiashi, S. Maruyama
    • Organizer
      2012 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2012-09-26
    • Related Report
      2013 Final Research Report
  • [Presentation] Optimization of Single-Walled Carbon Nanotube/Silicon Heterojunction Solar Cells2012

    • Author(s)
      K. Cui, S. Omiya, P. Zhao, T. Thurakitseree, T. Inoue, S. Aiwaka, S. Chiashi, S. Maruyama
    • Organizer
      2012年秋季第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学,愛媛
    • Year and Date
      2012-09-12
    • Related Report
      2013 Final Research Report
  • [Presentation] 水中アーク放電を用いた金属内包カーボンナノチューブ合成における陰極金属の沸点の影響2012

    • Author(s)
      竹腰健太郎,木津たきお,相川慎也,西川英一
    • Organizer
      2012年秋季第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学,愛媛
    • Year and Date
      2012-09-11
    • Related Report
      2013 Final Research Report
  • [Presentation] Optimization of Single-Walled Carbon Nanotube/Silicon Heterojunction Solar Cells2012

    • Author(s)
      K. Cui, S. Omiya, P. Zhao, T. Thurakitseree, T. Inoue, S. Aiwaka, S. Chiashi, S. Maruyama
    • Organizer
      2012年秋季 第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学(愛媛)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 水中アーク放電を用いた金属内包カーボンナノチューブ合成における陰極金属の沸点の影響2012

    • Author(s)
      竹腰 健太郎,木津 たきお,相川 慎也,西川 英一
    • Organizer
      2012年秋季 第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学(愛媛)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Influence of Polymer Coating on Device Properties of Carbon Nanotube Field-Effect Transistors2012

    • Author(s)
      S. Aikawa, T. Inoue, E. Einarsson, S. Chiashi, S. Maruyama
    • Organizer
      2012 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Kyoto International Conference Center (Kyoto, Japan)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Fabrication of Flexible Graphene Field-Effect Transistors with Single-Walled Carbon Nanotube Electrodes2012

    • Author(s)
      S.J. Kim, S. Aikawa, P. Zhao, B. Hou, E. Einarsson, S. Chiashi, S. Maruyama
    • Organizer
      2012 MRS Fall Meeting
    • Place of Presentation
      Hynes Convention Center (Boston, Massachusetts, USA)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Single-walled Carbon Nanotube/Silicon Heterojunction Photovoltaic Cell2012

    • Author(s)
      K. Cui, S. Omiya, P. Zhao, T. Thurakitseree, S. Aikawa, S. Chiashi, S. Maruyama
    • Organizer
      2012 MRS Fall Meeting
    • Place of Presentation
      Hynes Convention Center (Boston, Massachusetts, USA)
    • Related Report
      2012 Annual Research Report
  • [Book] 超フレキシブルで透明なカーボンナノチューブトランジスタO plus E (vol.35)2013

    • Author(s)
      相川慎也,塚越一仁,丸山茂夫
    • Publisher
      アドコム・メディア株式会社
    • Related Report
      2013 Final Research Report
  • [Book] O Plus E2013

    • Author(s)
      相川 慎也,塚越 一仁,丸山 茂夫
    • Publisher
      アドコム・メディア株式会社
    • Related Report
      2012 Annual Research Report
  • [Remarks]

    • URL

      http://www.nims.go.jp/pi-ele_g/member/aikawa.html

    • Related Report
      2013 Final Research Report
  • [Remarks] 研究室ホームページ

    • URL

      http://www.nims.go.jp/pi-ele_g/member/aikawa.html

    • Related Report
      2013 Annual Research Report
  • [Remarks] webページのURL

    • URL

      http://www.nims.go.jp/pi-ele_g/member/aikawa.html

    • Related Report
      2012 Annual Research Report
  • [Patent(Industrial Property Rights)] 有機EL素子及びその製造方法2014

    • Inventor(s)
      生田目 俊秀,塚越 一仁,相川 慎也
    • Industrial Property Rights Holder
      生田目 俊秀,塚越 一仁,相川 慎也
    • Industrial Property Rights Type
      特許
    • Filing Date
      2014-03-28
    • Related Report
      2013 Final Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 薄膜トランジスタ,薄膜トランジスタの製造方法および半導体装置2014

    • Inventor(s)
      生田目 俊秀,相川 慎也,木津 たきお,清水 麻希,三苫 伸彦,塚越 一仁
    • Industrial Property Rights Holder
      生田目 俊秀,相川 慎也,木津 たきお,清水 麻希,三苫 伸彦,塚越 一仁
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-016635
    • Filing Date
      2014-01-31
    • Related Report
      2013 Final Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 薄膜トランジスタおよびその製造方法2014

    • Inventor(s)
      相川 慎也,塚越 一仁,木津 たきお, 清水 麻希,三苫 伸彦,生田目 俊秀
    • Industrial Property Rights Holder
      相川 慎也,塚越 一仁,木津 たきお, 清水 麻希,三苫 伸彦,生田目 俊秀
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-016634
    • Filing Date
      2014-01-31
    • Related Report
      2013 Final Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 固定電荷を内部に誘起したゲート絶縁膜2014

    • Inventor(s)
      生田目 俊秀,相川 慎也,木津 たきお,清水 麻希,三苫 伸彦,塚越 一仁
    • Industrial Property Rights Holder
      生田目 俊秀,相川 慎也,木津 たきお,清水 麻希,三苫 伸彦,塚越 一仁
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-016633
    • Filing Date
      2014-01-31
    • Related Report
      2013 Final Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 薄膜トランジスタの構造,薄膜トランジスタの製造方法および半導体装置2014

    • Inventor(s)
      生田目 俊秀,相川 慎也,木津 たきお,清水 麻希,三苫 伸彦,塚越 一仁
    • Industrial Property Rights Holder
      生田目 俊秀,相川 慎也,木津 たきお,清水 麻希,三苫 伸彦,塚越 一仁
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-016632
    • Filing Date
      2014-01-31
    • Related Report
      2013 Final Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 酸化物半導体およびその製法2014

    • Inventor(s)
      相川 慎也,塚越 一仁,木津 たきお, 清水 麻希,三苫 伸彦,生田目 俊秀
    • Industrial Property Rights Holder
      相川 慎也,塚越 一仁,木津 たきお, 清水 麻希,三苫 伸彦,生田目 俊秀
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-016631
    • Filing Date
      2014-01-31
    • Related Report
      2013 Final Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 薄膜トランジスタおよびその製造方法2014

    • Inventor(s)
      塚越 一仁,相川 慎也,木津 たきお, 清水 麻希,三苫 伸彦,生田目 俊秀
    • Industrial Property Rights Holder
      塚越 一仁,相川 慎也,木津 たきお, 清水 麻希,三苫 伸彦,生田目 俊秀
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-016273
    • Filing Date
      2014-01-31
    • Related Report
      2013 Final Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 酸化物薄膜トランジスタおよびその製造方法2014

    • Inventor(s)
      塚越 一仁,相川 慎也,木津 たきお, 清水 麻希,三苫 伸彦,生田目 俊秀
    • Industrial Property Rights Holder
      塚越 一仁,相川 慎也,木津 たきお, 清水 麻希,三苫 伸彦,生田目 俊秀
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-016630
    • Filing Date
      2014-01-31
    • Related Report
      2013 Final Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 薄膜トランジスタおよびその製造方法2014

    • Inventor(s)
      生田目 俊秀,塚越 一仁,相川 慎也
    • Industrial Property Rights Holder
      生田目 俊秀,塚越 一仁,相川 慎也
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-016266
    • Filing Date
      2014-01-31
    • Related Report
      2013 Final Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 薄膜トランジスタおよびその製造方法2014

    • Inventor(s)
      生田目俊秀,塚越一仁,相川慎也
    • Industrial Property Rights Holder
      生田目俊秀,塚越一仁,相川慎也
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-016266
    • Filing Date
      2014-01-31
    • Related Report
      2013 Annual Research Report
  • [Patent(Industrial Property Rights)] 酸化物薄膜トランジスタおよびその製造方法2014

    • Inventor(s)
      塚越一仁,相川慎也,木津たきお,清水麻希,三苫伸彦,生田目俊秀
    • Industrial Property Rights Holder
      塚越一仁,相川慎也,木津たきお,清水麻希,三苫伸彦,生田目俊秀
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-016630
    • Filing Date
      2014-01-31
    • Related Report
      2013 Annual Research Report
  • [Patent(Industrial Property Rights)] 薄膜トランジスタおよびその製造方法2014

    • Inventor(s)
      塚越一仁,相川慎也,木津たきお,清水麻希,三苫伸彦,生田目俊秀
    • Industrial Property Rights Holder
      塚越一仁,相川慎也,木津たきお,清水麻希,三苫伸彦,生田目俊秀
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-016273
    • Filing Date
      2014-01-31
    • Related Report
      2013 Annual Research Report
  • [Patent(Industrial Property Rights)] 酸化物半導体およびその製法2014

    • Inventor(s)
      相川慎也,塚越一仁,木津たきお,清水麻希,三苫伸彦,生田目俊秀
    • Industrial Property Rights Holder
      相川慎也,塚越一仁,木津たきお,清水麻希,三苫伸彦,生田目俊秀
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-016631
    • Filing Date
      2014-01-31
    • Related Report
      2013 Annual Research Report
  • [Patent(Industrial Property Rights)] 薄膜トランジスタの構造、薄膜トランジスタの製造方法および半導体装置2014

    • Inventor(s)
      生田目俊秀,相川慎也,木津たきお,清水麻希,三苫伸彦,塚越一仁
    • Industrial Property Rights Holder
      生田目俊秀,相川慎也,木津たきお,清水麻希,三苫伸彦,塚越一仁
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-016632
    • Filing Date
      2014-01-31
    • Related Report
      2013 Annual Research Report
  • [Patent(Industrial Property Rights)] 固定電荷を内部に誘起したゲート絶縁膜2014

    • Inventor(s)
      生田目俊秀,相川慎也,木津たきお,清水麻希,三苫伸彦,塚越一仁
    • Industrial Property Rights Holder
      生田目俊秀,相川慎也,木津たきお,清水麻希,三苫伸彦,塚越一仁
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-016633
    • Filing Date
      2014-01-31
    • Related Report
      2013 Annual Research Report
  • [Patent(Industrial Property Rights)] 薄膜トランジスタおよびその製造方法2014

    • Inventor(s)
      相川慎也,塚越一仁,木津たきお,清水麻希,三苫伸彦,生田目俊秀
    • Industrial Property Rights Holder
      相川慎也,塚越一仁,木津たきお,清水麻希,三苫伸彦,生田目俊秀
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-016634
    • Filing Date
      2014-01-31
    • Related Report
      2013 Annual Research Report
  • [Patent(Industrial Property Rights)] 薄膜トランジスタ、薄膜トランジスタの製造方法および半導体装置2014

    • Inventor(s)
      生田目俊秀,相川慎也,木津たきお,清水麻希,三苫伸彦,塚越一仁
    • Industrial Property Rights Holder
      生田目俊秀,相川慎也,木津たきお,清水麻希,三苫伸彦,塚越一仁
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-016635
    • Filing Date
      2014-01-31
    • Related Report
      2013 Annual Research Report
  • [Patent(Industrial Property Rights)] 有機EL素子及びその製造方法2014

    • Inventor(s)
      生田目俊秀,塚越一仁,相川慎也
    • Industrial Property Rights Holder
      生田目俊秀,塚越一仁,相川慎也
    • Industrial Property Rights Type
      特許
    • Filing Date
      2014-03-28
    • Related Report
      2013 Annual Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 薄膜トランジスタおよびその製造方法2013

    • Inventor(s)
      生田目 俊秀,塚越 一仁,相川 慎也, 知京 豊裕
    • Industrial Property Rights Holder
      生田目 俊秀,塚越 一仁,相川 慎也, 知京 豊裕
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-139425
    • Filing Date
      2013-07-03
    • Related Report
      2013 Final Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 薄膜トランジスタ,薄膜トランジスタの製造方法および半導体装置2013

    • Inventor(s)
      塚越 一仁,ピーター ダルマワン, 相川 慎也,生田目 俊秀,柳沢 佳一
    • Industrial Property Rights Holder
      塚越 一仁,ピーター ダルマワン, 相川 慎也,生田目 俊秀,柳沢 佳一
    • Industrial Property Rights Type
      特許
    • Filing Date
      2013-06-13
    • Related Report
      2013 Final Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 薄膜トランジスタおよびその製造方法2013

    • Inventor(s)
      生田目 俊秀,塚越 一仁,相川 慎也
    • Industrial Property Rights Holder
      生田目 俊秀,塚越 一仁,相川 慎也
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-099284
    • Filing Date
      2013-05-09
    • Related Report
      2013 Final Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 有機EL素子及びその製造方法2013

    • Inventor(s)
      生田目 俊秀,塚越 一仁,相川 慎也
    • Industrial Property Rights Holder
      生田目 俊秀,塚越 一仁,相川 慎也
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-068164
    • Filing Date
      2013-03-28
    • Related Report
      2013 Final Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 有機EL素子及びその製造方法2013

    • Inventor(s)
      生田目 俊秀,塚越 一仁,相川 慎也
    • Industrial Property Rights Holder
      生田目 俊秀,塚越 一仁,相川 慎也
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-067801
    • Filing Date
      2013-03-28
    • Related Report
      2013 Final Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 有機EL素子2013

    • Inventor(s)
      生田目 俊秀,塚越 一仁,相川 慎也
    • Industrial Property Rights Holder
      生田目 俊秀,塚越 一仁,相川 慎也
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-067782
    • Filing Date
      2013-03-28
    • Related Report
      2013 Final Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 薄膜トランジスタおよびその製造方法2013

    • Inventor(s)
      生田目俊秀,塚越一仁,相川慎也
    • Industrial Property Rights Holder
      生田目俊秀,塚越一仁,相川慎也
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-099284
    • Filing Date
      2013-05-09
    • Related Report
      2013 Annual Research Report
  • [Patent(Industrial Property Rights)] 薄膜トランジスタ、薄膜トランジスタの製造方法および半導体装置2013

    • Inventor(s)
      塚越一仁,ピーターダルマワン,相川慎也,生田目俊秀,柳沢佳一
    • Industrial Property Rights Holder
      塚越一仁,ピーターダルマワン,相川慎也,生田目俊秀,柳沢佳一
    • Industrial Property Rights Type
      特許
    • Filing Date
      2013-06-13
    • Related Report
      2013 Annual Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 薄膜トランジスタおよびその製造方法2013

    • Inventor(s)
      生田目俊秀,塚越一仁,相川慎也,知京豊裕
    • Industrial Property Rights Holder
      生田目俊秀,塚越一仁,相川慎也,知京豊裕
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-139425
    • Filing Date
      2013-07-03
    • Related Report
      2013 Annual Research Report
  • [Patent(Industrial Property Rights)] 有機EL素子2013

    • Inventor(s)
      生田目 俊秀,塚越 一仁,相川 慎也
    • Industrial Property Rights Holder
      生田目 俊秀,塚越 一仁,相川 慎也
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-067782
    • Filing Date
      2013-03-28
    • Related Report
      2012 Annual Research Report
  • [Patent(Industrial Property Rights)] 有機EL素子及びその製造方法2013

    • Inventor(s)
      生田目 俊秀,塚越 一仁,相川 慎也
    • Industrial Property Rights Holder
      生田目 俊秀,塚越 一仁,相川 慎也
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-067801
    • Filing Date
      2013-03-28
    • Related Report
      2012 Annual Research Report
  • [Patent(Industrial Property Rights)] 有機EL素子及びその製造方法2013

    • Inventor(s)
      生田目 俊秀,塚越 一仁,相川 慎也
    • Industrial Property Rights Holder
      生田目 俊秀,塚越 一仁,相川 慎也
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-068164
    • Filing Date
      2013-03-28
    • Related Report
      2012 Annual Research Report

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Published: 2012-11-27   Modified: 2019-07-29  

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