Robust and intelligent parallel-connected GaN power devices

Research Project

Project/Area Number	24K17265
Research Category	Grant-in-Aid for Early-Career Scientists
Allocation Type	Multi-year Fund
Review Section	Basic Section 21010:Power engineering-related
Research Institution	Kyushu Institute of Technology
Principal Investigator	Tripathi Ravi・Nath 九州工業大学, 次世代パワーエレクトロ二クス研究センター, 助教 (00869745)
Project Period (FY)	2024-04-01 – 2027-03-31
Project Status	Granted (Fiscal Year 2024)
Budget Amount *help	¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000) Fiscal Year 2026: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000) Fiscal Year 2025: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000) Fiscal Year 2024: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Keywords	Power device / GaN Devices / Paralleling / Gate driving / Control
Outline of Research at the Start	GaN have lower conduction losses than conventional silicon (Si), and have faster switching speeds; it is one of the most important next-generation power semiconductors for small-sized converters. Parallel operation of GaN is believed to be pathbreaker considering extended GaN application.