| Project/Area Number |
24K17265
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| Research Category |
Grant-in-Aid for Early-Career Scientists
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| Allocation Type | Multi-year Fund |
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| Review Section |
Basic Section 21010:Power engineering-related
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| Research Institution | Kyushu Institute of Technology |
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Principal Investigator |
Tripathi Ravi・Nath 九州工業大学, 次世代パワーエレクトロニクス研究センター, 助教 (00869745)
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| Project Period (FY) |
2024-04-01 – 2027-03-31
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| Project Status |
Granted (Fiscal Year 2024)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2026: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2025: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2024: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | Power device / GaN / Wide band gap / Paralleling / GaN Devices / Gate driving / Control |
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| Outline of Research at the Start |
GaN have lower conduction losses than conventional silicon (Si), and have faster switching speeds; it is one of the most important next-generation power semiconductors for small-sized converters. Parallel operation of GaN is believed to be pathbreaker considering extended GaN application.
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| Outline of Annual Research Achievements |
Currently simulation model is built using the spice netlist to evaluate the losses and performance of GaN device for the converter system.
GaN device have the unique performance corresponding to dead time and switching frequency and this is evaluated considering the complexity for the parallel-connected GaN devices.
Also, developing a power circuit board to realize the paralleling of the GaN devices, as half-bridge fashion or discrete.
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| Current Status of Research Progress |
Current Status of Research Progress
3: Progress in research has been slightly delayed.
Reason
It was progressing quite smoothly but due to sudden unavoidable reasons
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| Strategy for Future Research Activity |
Build an evaluation environment for high-speed switching and perform a switching test and verify the system operation using double pulse testing
Experimental testing and verification of the power circuit board at 300V, 200A output condition and testify the current imbalance of the parallel connected GaN power circuit.
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