| Budget Amount *help |
¥46,800,000 (Direct Cost: ¥36,000,000、Indirect Cost: ¥10,800,000)
Fiscal Year 2016: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2015: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2014: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2013: ¥32,240,000 (Direct Cost: ¥24,800,000、Indirect Cost: ¥7,440,000)
|
|---|
| Outline of Final Research Achievements |
SiC is expected to be a semiconductor material for next-generation power devices. Reducing a electrical loss, it is necessary to decrease the electrical resistivity of semiconductor materials. In SiC, a doping impurities are nitrogen for n-type and aluminum for p-type. However, highly doping in SiC induces stacking faults. In this study, we developed the doping control in SiC solution growth which is a good method for high-quality SiC crystal. We estimated a modulate doping concentration avoiding the induction stacking faults. And, we made clear the mechanism of doping of nitrogen.
|
