| Budget Amount *help |
¥18,330,000 (Direct Cost: ¥14,100,000、Indirect Cost: ¥4,230,000)
Fiscal Year 2015: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000)
Fiscal Year 2014: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000)
Fiscal Year 2013: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
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| Outline of Final Research Achievements |
Our goal was to establish new photonic-electronic-magnetic multifunction for novel devices by “single-crystalline” oxide semiconductor films and heterostructures. With the use of abundant elements and “mist CVD”, we aimed at environmental-friendly semiconductor technology from the growth to disposal. The band gap engineering and function engineering of alloys led new multifunctional materials such as corundum-structured gallium oxide-based wide band gap semiconductor system and ferromagnetic semiconductors with Curie temperature above room temperature, which are effective for next generation devices with novel physics.
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