| Budget Amount *help |
¥17,940,000 (Direct Cost: ¥13,800,000、Indirect Cost: ¥4,140,000)
Fiscal Year 2016: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2015: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2014: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
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| Outline of Final Research Achievements |
Si has many advantages, such as non-toxic, abundant, stable, established process for device manufacturing. Although Si exhibits excellent power factor, its lattice thermal conductivity is exceptionally high, which results in the low ZT. However, improvement of the ZT can be achieved by controlling the structure of Si in nanoscale to reduce the lattice thermal conductivity significantly. Further, the power factor can be enhanced by modulation doping. In the present study, we studied the effect of metal silicides as the nanoscale precipitates on the thermoelectric properties of Si. Nanocomposites composed of silicon and various metal silicides were synthesized by a melt spinning method. The size and the distribution of the metal silicides were controlled by changing mainly the cooling rate in the melt spinning process. The metal silicides reduced the lattice thermal conductivity of Si with keeping a high power factor, leading to the improvement of ZT.
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