Fabrication of non-polar GaN and nitride semiconductor crystals using newly developed control technique of crystal planes

• Project/Area Number: 25390064
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Tokyo University of Agriculture and Technology
• Principal Investigator: MURAKAMI HISASHI 東京農工大学, 工学(系)研究科(研究院), 准教授 (90401455)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000); Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2014: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000); Fiscal Year 2013: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
• Keywords: 窒化物半導体 / 選択成長 / 半極性 / 基板加工 / 異方性エッチング / 砒化ガリウム

Outline of Final Research Achievements

Selective growth of group-III nitride semiconductors on patterned GaAs substrate was carried out using anisotropic etching, in order for the realization of non-polar nitride semiconductor crystals. It was successfully performed that anisotropic and isotropic etching resulted in the formation of (111)A facet structure and the formation of both (111)A and (111)B facets structures, respectively. Selective growth of InN was succeeded on (111)B surface of the patterned GaAs(110) substrate by utilizing the difference in the thermal stability of crystal plane of InN crystal.

Research Products

• [Journal Article] Investigation of NH3 input partial pressure for N-polarity InGaN growth on GaN substrates by tri-halide vapor phase epitaxy (2016)
  • Author(s): T. Hirasaki, T. Hasegawa, M. Meguro, Q. T. Thieu, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu
  • Journal Title: Japanese Journal of Applied Physics Volume: 55 Issue: 5S Pages: 05FA01-05FA01
  • DOI: 10.7567/jjap.55.05fa01
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] High rate InN growth by two-step precursor generation hydride vapor phase epitaxy (2015)
  • Author(s): Rie Togashi, Quang Tu Thieu, Hisashi Murakami, Yoshihiro Ishitani, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu
  • Journal Title: Journal of Crystal Growth Volume: 422 Pages: 15-19
  • DOI: 10.1016/j.jcrysgro.2015.04.019
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Thermal stability of β-Ga2O3 in mixed flows of H2 and N2 (2015)
  • Author(s): Rie Togashi, Kazushiro Nomura1, Chihiro Eguchi, Takahiro Fukizawa, Ken Goto, Quang Tu Thieu, Hisashi Murakami, Yoshinao Kumagai, Akito Kuramata, Shigenobu Yamakoshi
  • Journal Title: Japanese Journal of Applied Physics Volume: 54 Issue: 4 Pages: 041102-041102
  • DOI: 10.7567/jjap.54.041102
  • Peer Reviewed
• [Journal Article] Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy (2014)
  • Author(s): .Kazushiro Nomura, Ken Goto, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akito Kuramata, Shigenobu Yamakoshi, Akinori Koukitu
  • Journal Title: Journal of Crystal Growth Volume: 405 Issue: 1 Pages: 19-22
  • DOI: 10.7567/apex.8.015503
  • Peer Reviewed
• [Journal Article] Growth of Thick InGaN Layers by Tri-Halide Vapor Phase Epitaxy (2014)
  • Author(s): Takahide Hirasaki, Masato Ishikawa, Fumiaki Sakuma, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
  • Journal Title: Japanese Journal of Applied Physics Volume: 53
  • Peer Reviewed
• [Journal Article] Thermodynamic analysis of InGaN-HVPE growth using group-III chlorides, bromides, and iodides (2013)
  • Author(s): Takahide Hirasaki
  • Journal Title: Physica Status Solide C Volume: 10 Issue: 3 Pages: 413-416
  • DOI: 10.1002/pssc.201200695
  • Peer Reviewed
• [Journal Article] Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(10- 13) crystal on GaAs(110) by MOVPE (2013)
  • Author(s): H.C. Cho, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
  • Journal Title: Journal of Crystal Growth Volume: 367 Pages: 122-125
  • DOI: 10.1016/j.jcrysgro.2012.12.020
  • Peer Reviewed
• [Journal Article] High-Temperature Heat-Treatment of c-, a-, r-, and m-Plane Sapphire Substrates in Mixed Gases of H2 and N2 (2013)
  • Author(s): Kazushiro Nomura, Shoko Hanagata, Atsushi Kunisaki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
  • Journal Title: Japanese Journal of Applied Physics Volume: 52 Issue: 8S Pages: 08JB10-08JB10
  • DOI: 10.7567/jjap.52.08jb10
  • Peer Reviewed
• [Journal Article] Effect of High NH3 Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates (2013)
  • Author(s): Rie Togashi, Sho Yamamoto, K. Fredrik Karlsson, Hisashi Murakami, Yoshinao Kumagai, Per-Olof Holtz, Akinori Koukitu
  • Journal Title: Japanese Journal of Applied Physics Volume: 52 Issue: 8S Pages: 08JD05-08JD05
  • DOI: 10.7567/jjap.52.08jd05
  • NAID: 210000142640
  • Peer Reviewed
• [Journal Article] Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vapor phase epitaxy (2012)
  • Author(s): Hisashi Murakami
  • Journal Title: Physica Status Solide C Volume: 10 Issue: 3 Pages: 472-475
  • DOI: 10.1002/pssc.201200685
  • Peer Reviewed
• [Presentation] Growth of Thick InGaN and GaN by Tri-Halide Vapor Phase Epitaxy with high rate (2015)
  • Author(s): Hisashi Murakami, Takahide Hirasaki, Quang Tu Thieu, Rie Togashi, Yoshinao Kumagai, Akinori Koukitu
  • Organizer: Collaborative Conference on Crystal Growth (3CG)
  • Place of Presentation: Eaton Hotel, Hong Kong
  • Year and Date: 2015-12-15
  • Int'l Joint Research / Invited
• [Presentation] HVPE growth of the group III nitrides (2015)
  • Author(s): A. Koukitu, Y. Kumagai, H. Murakami
  • Organizer: 14th Akasaki Research Center Symposium
  • Place of Presentation: Nagoya University, Aichi, Japan
  • Year and Date: 2015-11-20
  • Int'l Joint Research / Invited
• [Presentation] Influence of NH3 input partial pressure on N-polarity InGaN growth by tri-halide vapor phase epitaxy (2015)
  • Author(s): Takahide Hirasaki, Tomoyasu Hasegawa, Misaki Meguro, Quang Tu Thieu, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu
  • Organizer: 6th International Symposium on Growth of III-Nitrides (ISGN-6)
  • Place of Presentation: Act City Hamamatsu, Shizuoka, Japan
  • Year and Date: 2015-11-10
  • Int'l Joint Research
• [Presentation] Tri-Halide Vapor Phase Epitaxy of Thick GaN and InGaN Layers (2015)
  • Author(s): Hisashi Murakami, Takahide Hirasaki, Quang Tu Thieu, Rie Togashi, Yoshinao Kumagai, Kou Matsumoto, Akinori Koukitu
  • Organizer: 9th International Workshop on Bulk Nitride Semiconductors (IWBNS-IX)
  • Place of Presentation: Hansol Oak Valley, Wonju, Korea
  • Year and Date: 2015-11-04
  • Int'l Joint Research / Invited
• [Presentation] Thick (>10 μm) and High Crystalline Quality InGaN Growth on GaN(000-1) Substrate by Tri-Halide Vapor Phase Epitaxy (2015)
  • Author(s): Takahide Hirasaki, Tomoyasu Hasegawa, Misaki Meguro, Quang Tu Thieu, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu
  • Organizer: 9th International Workshop on Bulk Nitride Semiconductors (IWBNS-IX)
  • Place of Presentation: Hansol Oak Valley, Wonju, Korea
  • Year and Date: 2015-11-04
  • Int'l Joint Research / Invited
• [Presentation] トリハライド気相成長法によるIn組成5%のInGaN厚膜(>10μm)成長 (2015)
  • Author(s): 目黒 美佐稀、平﨑 貴英、長谷川 智康、ティユ クァン トゥ、村上 尚、熊谷 義直、Bo Monemar、纐纈 明伯
  • Organizer: 第4回結晶工学未来塾
  • Place of Presentation: 東京農工大学(東京都小金井市)
  • Year and Date: 2015-10-29
• [Presentation] Effect of NH3 Input Partial Pressure on InGaN Growth by Tri-Halide Vapor Phase Epitaxy (2015)
  • Author(s): Takahide Hirasaki, Tomoyasu Hasegawa, Misaki Meguro, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar and Akinori Koukitu
  • Organizer: 34th Electronic Materials Symposium (EMS-34)
  • Place of Presentation: ラフォーレ琵琶湖(滋賀県守山市)
  • Year and Date: 2015-07-16
• [Presentation] Dependences of input InCl3 ratio and growth temperature in InGaN growth by Tri-Halide Vapor Phase Epitaxy (2015)
  • Author(s): Misaki Meguro, Takahide Hirasaki, Tomoyasu Hasegawa, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar and Akinori Koukitu
  • Organizer: 34th Electronic Materials Symposium (EMS-34)
  • Place of Presentation: ラフォーレ琵琶湖(滋賀県守山市)
  • Year and Date: 2015-07-15
• [Presentation] Growth of GaN and InGaN thick epitaxial layers by tri-halide vapor phase epitaxy (2015)
  • Author(s): Hisashi Murakami, Takahide Hirasaki, Quang Tu Thieu, Rie Togashi, Yoshinao Kumagai, Kou Matsumoto, Akinori Koukitu
  • Organizer: Workshop on Frontier Photonic and Electronic Materials and Devices
  • Place of Presentation: Kyoto University, Kyoto, Japan
  • Year and Date: 2015-07-13
  • Int'l Joint Research / Invited
• [Presentation] トリハライド気相成長法を用いたInGaN成長におけるNH3供給分圧の影響 (2015)
  • Author(s): 平崎貴英，長谷川智康，目黒美佐稀，村上尚，熊谷義直，Bo Monemar，纐纈明伯
  • Organizer: 日本結晶成長学会ナノ構造・エピタキシャル成長分科会第7回窒化物半導体結晶成長講演会
  • Place of Presentation: 東北大学片平キャンパス(宮城県仙台市)
  • Year and Date: 2015-05-08
• [Presentation] Growth of GaN on r-plane sapphire substrate by tri-halide vapor phase epitaxy (2015)
  • Author(s): A. Shiono, N. Takekawa, H. Murakami, Y. Kumagai and A. Koukitu
  • Organizer: Conference on LED and Its Industrial Application '15 (LEDIA '15)
  • Place of Presentation: Pacifico Yokohama, Kanagawa, Japan
  • Year and Date: 2015-04-23
  • Int'l Joint Research
• [Presentation] Calculation of thermochemical data for the growth of III-nitrides by vapor phase epitaxy (2015)
  • Author(s): N. Takekawa, H. Murakami, Y. Kumagai and A. Koukitu
  • Organizer: Conference on LED and Its Industrial Application '15 (LEDIA '15)
  • Place of Presentation: Pacifico Yokohama, Kanagawa, Japan
  • Year and Date: 2015-04-23
  • Int'l Joint Research
• [Presentation] III-Cl・III-Cl3混在ハライド気相成長によるIII族窒化物特異構造の形成 (2015)
  • Author(s): 熊谷義直，富樫理恵，ティユ クァン トゥ，村上尚，Bo Monemar，纐纈明伯
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学湘南キャンパス, 神奈川県
  • Year and Date: 2015-03-14
  • Invited
• [Presentation] 水素・窒素気流中におけるβ-Ga2O3の熱的安定性の熱力学的検討 (2015)
  • Author(s): 富樫理恵，野村一城，江口千尋，蕗澤孝紘，後藤健，村上尚，熊谷義直，倉又朗人，山腰茂伸，纐纈明伯
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学湘南キャンパス, 神奈川県
  • Year and Date: 2015-03-13
• [Presentation] ハライド気相成長法によるβ-Ga2O3基板上ホモエピタキシャル成長 (2015)
  • Author(s): 野村一城，後藤健，佐々木公平，河原克明，ティユ クァン トゥ，富樫理恵，村上尚，熊谷義直，東脇正高，倉又朗人，山腰茂伸，Bo Monemar，纐纈明伯
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学湘南キャンパス, 神奈川県
  • Year and Date: 2015-03-13
• [Presentation] High-purity and highly-transparent AlN bulk crystal growth for UVC LED application by HVPE (2015)
  • Author(s): Yoshinao Kumagai, Toru Nagashima, Toru Kinoshita, Rie Togashi, Reo Yamamoto, Baxter Moody, Hisashi Murakami, Ramon Collazo, Akinori Koukitu and Zlatko Sitar
  • Organizer: 2015 Photonics West
  • Place of Presentation: San Francisco, California, U.S.A.
  • Year and Date: 2015-02-09
  • Invited
• [Presentation] Temperature Dependence of InGaN Growth by Tri-Halide Vapor Phase Epitaxy (2014)
  • Author(s): T. Hirasaki, Y. Watanabe, T. Hasegawa, H. Murakami, Y. Kumagai, and A. Koukitu
  • Organizer: 10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
  • Place of Presentation: Kaohsiung, Taiwan
  • Year and Date: 2014-12-16
• [Presentation] Theoretical calculation of thermochemical data for the growth of group-III nitrides (2014)
  • Author(s): N. Takekawa, H. Murakami, Y. Kumagai, and A. Koukitu
  • Organizer: 10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
  • Place of Presentation: Kaohsiung, Taiwan
  • Year and Date: 2014-12-16
• [Presentation] Homoepitaxial Growth of ZnO Thin Layers by Halide Vapor Phase Epitaxy using Hydrogen- Free Sources (2014)
  • Author(s): Rintaro Asakawa, Naoto Kanzaki, Song-Yun Kan, Akihiko Hiroe, Rie Togashi, Hisashi Murakami, Yusaku Kashiwagi,Yoshinao Kumagai, and Akinori Koukitu
  • Organizer: 10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
  • Place of Presentation: Kaohsiung, Taiwan
  • Year and Date: 2014-12-15
• [Presentation] Thermal stability of Ga2O3 in mixed gases of H2 and N2 (2014)
  • Author(s): R. Togashi, K. Nomura, C. Eguchi, T. Fukizawa, K. Goto, H. Murakami, Y. Kumagai, A. Kuramata, S. Yamakoshi, A. Koukitu
  • Organizer: 10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
  • Place of Presentation: Kaohsiung, Taiwan
  • Year and Date: 2014-12-15
• [Presentation] Homo-Epitaxial Growth of High-Purity Films of β-Ga2O3 and ZnO by Halide Vapor Phase Epitaxy (2014)
  • Author(s): Yoshinao Kumagai, Rie Togashi, Hisashi Murakami and Akinori Koukitu
  • Organizer: 2014 MRS Fall Meeting and Exhibit
  • Place of Presentation: Boston, Massachusetts, U.S.A
  • Year and Date: 2014-12-01
  • Invited
• [Presentation] Halide Vapor Phase Epitaxy of β-Ga2O3 Films on (001) β-Ga2O3 Substrate (2014)
  • Author(s): Hisashi Murakami, Kazushiro Nomura, Ken Goto, Katsuaki Kawara, Rie Togashi, Yoshinao Kumagai, Akito Kuramata, Shigenobu Yamakoshi and Akinori Koukitu
  • Organizer: 2014 MRS Fall Meeting and Exhibit
  • Place of Presentation: Boston, Massachusetts, U.S.A
  • Year and Date: 2014-12-01
• [Presentation] Thermodynamic Analysis on Halide Vapor Phase Epitaxy of β-Ga2O3 (2014)
  • Author(s): Kazushiro Nomura, Ken Goto, Rie Togashi, Hisashi Murakami, Akito Kuramata, Shigenobu Yamakoshi and Akinori Koukitu
  • Organizer: 2014 MRS Fall Meeting and Exhibit
  • Place of Presentation: Boston, Massachusetts, U.S.A
  • Year and Date: 2014-12-01
• [Presentation] トリハライド気相成長法によるInGaN成長における成長温度の影響 (2014)
  • Author(s): 長谷川智康，平崎貴英，渡辺雄太，村上尚，熊谷義直，纐纈明伯
  • Organizer: 応用物理学会第3回結晶工学未来塾（2014）
  • Place of Presentation: 学習院大学, 東京都
  • Year and Date: 2014-11-13
• [Presentation] HVPE法によるAlN/sapphireテンプレート上へのSiドープAlN成長の検討 (2014)
  • Author(s): 田中凌平，東城俊介，額賀俊成，富樫理恵，永島徹，木下亨，Baxter Moody， 村上尚，Ramon Collazo，熊谷義直，纐纈明伯，Zlatko Sitar
  • Organizer: 応用物理学会第3回結晶工学未来塾（2014）
  • Place of Presentation: 学習院大学, 東京都
  • Year and Date: 2014-11-13
• [Presentation] 窒化イットリア安定化ジルコニア(111)基板上への前駆体二段階生成HVPE法による高速InN成長 (2014)
  • Author(s): 小島千恵，富樫理恵，村上尚，熊谷義直，纐纈明伯
  • Organizer: 応用物理学会第3回結晶工学未来塾（2014）
  • Place of Presentation: 学習院大学, 東京都
  • Year and Date: 2014-11-13
• [Presentation] GaCl-O2系HVPE法によるβ-Ga2O3成長の熱力学解析 (2014)
  • Author(s): 野村一城，後藤健，富樫理恵，村上尚，熊谷義直，倉又朗人，山腰茂伸，纐纈明伯
  • Organizer: 応用物理学会第3回結晶工学未来塾（2014）
  • Place of Presentation: 学習院大学, 東京都
  • Year and Date: 2014-11-13
• [Presentation] 水素・窒素雰囲気下におけるIII族酸化物基板安定性の熱力学的調査 (2014)
  • Author(s): 江口千尋，蕗澤孝紘，野村一城，後藤健，富樫理恵，村上尚，倉又朗人，熊谷義直，纐纈明伯
  • Organizer: 応用物理学会第3回結晶工学未来塾（2014）
  • Place of Presentation: 学習院大学, 東京都
  • Year and Date: 2014-11-13
• [Presentation] ハライド気相成長法によるβ-Ga2O3のホモエピタキシャル成長 (2014)
  • Author(s): 河原克明，野村一城，後藤健，富樫理恵，村上尚，熊谷義直，倉又朗人，山腰茂伸，纐纈明伯
  • Organizer: 応用物理学会第3回結晶工学未来塾（2014）
  • Place of Presentation: 学習院大学, 東京都
  • Year and Date: 2014-11-13
• [Presentation] 水素・窒素雰囲気下におけるGa2O3分解の検討 (2014)
  • Author(s): 富樫理恵，野村一城，江口千尋，蕗澤孝紘，後藤健，村上尚，熊谷義直，倉又朗人，山腰茂伸，纐纈明伯
  • Organizer: 第44回結晶成長国内会議（NCCG-44）
  • Place of Presentation: 学習院大学, 東京都
  • Year and Date: 2014-11-07
• [Presentation] HVPE法を用いたβ-Ga2O3結晶成長の熱力学解析 (2014)
  • Author(s): 野村一城，後藤健，富樫理恵，村上尚，熊谷義直，倉又朗人，山腰茂伸，纐纈明伯
  • Organizer: 第44回結晶成長国内会議（NCCG-44）
  • Place of Presentation: 学習院大学, 東京都
  • Year and Date: 2014-11-07
• [Presentation] 淺川倫太郎，神崎直人，林田真由子，廣江昭彦， 康松潤，富樫理恵，村上尚，柏木勇作，熊谷義直，纐纈明伯 (2014)
  • Author(s): 一酸化窒素を用いた常圧CVD法によるZnO:N薄膜の成長
  • Organizer: 第44回結晶成長国内会議（NCCG-44）
  • Place of Presentation: 学習院大学, 東京都
  • Year and Date: 2014-11-07
• [Presentation] ハライド気相成長法による酸化ガリウム成長の熱力学解析 (2014)
  • Author(s): 野村一城，後藤 健，富樫理恵，村上 尚，熊谷義直，倉又朗人，山腰茂伸，纐纈明伯
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学, 北海道
  • Year and Date: 2014-09-19
• [Presentation] AlNのHVPE高温ホモエピタキシャル成長における基板昇降温時表面劣化の原因 (2014)
  • Author(s): 東城俊介，田中凌平，額賀俊成，富樫理恵，永島 徹，木下 亨，Baxter Moody， 村上 尚, Ramon Collazo，熊谷義直，Zlatko Sitar
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学, 北海道
  • Year and Date: 2014-09-17
• [Presentation] 前駆体二段階生成HVPE法による窒化イットリア安定化ジルコニア(111)基板上への高速InN成長 (2014)
  • Author(s): 小島千恵，富樫理恵，村上 尚，熊谷義直，纐纈明伯
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学, 北海道
  • Year and Date: 2014-09-17
• [Presentation] Thermal Stability of Group-III Oxides in Mixed Flows of H2 and N2 for Growth of Group-III Nitrides (2014)
  • Author(s): C. Eguchi, T. Fukizawa, K. Nomura, K. Goto, R. Togashi, H. Murakami, A. Kuramata, Y. Kumagai and A. Koukitu
  • Organizer: International Workshop on Nitride Semiconductors(IWN2014)
  • Place of Presentation: WROCLAW, Poland
  • Year and Date: 2014-08-27
• [Presentation] Growth of AlN by hydride vapor phase epitaxy (2014)
  • Author(s): Yoshinao Kumagai, Toru Nagashima, Toru Kinoshita, Baxter Moody, Rie Togashi, Hisashi Murakami, Ramon Collazo, Akinori Koukitu and Zlatko Sitar
  • Organizer: International Workshop on Nitride Semiconductors(IWN2014)
  • Place of Presentation: WROCLAW, Poland
  • Year and Date: 2014-08-26
  • Invited
• [Presentation] Growth of Si-doped AlN Layers by Hydride Vapor Phase Epitaxy (2014)
  • Author(s): R. Tanaka, S. Tojo, T. Nukaga, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, Y. Kumagai, A. Koukitu and Z. Sitar
  • Organizer: International Workshop on Nitride Semiconductors(IWN2014)
  • Place of Presentation: WROCLAW, Poland
  • Year and Date: 2014-08-26
• [Presentation] Investigation of Ambient Gas after High-Temperature Growth of AlN by Hydride Vapor Phase Epitaxy (2014)
  • Author(s): S. Tojo, R. Tanaka, T. Nukaga, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, Y. Kumagai, A. Koukitu and Z. Sitar
  • Organizer: International Workshop on Nitride Semiconductors(IWN2014)
  • Place of Presentation: WROCLAW, Poland
  • Year and Date: 2014-08-26
• [Presentation] Selective Nucleation of Semi-Polar InN on Patterned GaAs(110) Substrate by MOVPE (2014)
  • Author(s): Hisashi Murakami, Yusuke Kitai, Thieu Quan Tu, Yoshinao Kumagai and Akinori Koukitu
  • Organizer: International Workshop on Nitride Semiconductors(IWN2014)
  • Place of Presentation: WROCLAW, Poland
  • Year and Date: 2014-08-26
• [Presentation] High-Speed Hydride Vapor Phase Epitaxy of InN on Nitrided Yttria-Stabilized Zirconia (111) substrates (2014)
  • Author(s): C. Kojima, R. Togashi, H. Murakami, Y. Kumagai and A. Koukitu
  • Organizer: International Workshop on Nitride Semiconductors(IWN2014)
  • Place of Presentation: WROCLAW, Poland
  • Year and Date: 2014-08-25
• [Presentation] HVPE法によるAlN単結晶自立基板の作製とそのデバイス応用 (2014)
  • Author(s): 熊谷義直, 永島徹, 木下亨, 村上尚, 纐纈明伯
  • Organizer: 第6回窒化物半導体結晶成長講演会
  • Place of Presentation: 名城大学, 愛知県
  • Year and Date: 2014-07-15
  • Invited
• [Presentation] 第一原理計算と統計力学を用いたIII族窒化物の成長における熱化学データの算出 (2014)
  • Author(s): 竹川直，村上尚，熊谷義直，纐纈明伯
  • Organizer: 第6回窒化物半導体結晶成長講演会
  • Place of Presentation: 名城大学, 愛知県
  • Year and Date: 2014-07-15
• [Presentation] III族酸化物単結晶基板の水素・窒素雰囲気下分解の熱力学解析 (2014)
  • Author(s): 江口千尋, 蕗澤孝紘, 野村一城, 後藤健, 富樫理恵, 村上尚, 倉又朗人, 熊谷義直, 纐纈明伯
  • Organizer: 第6回窒化物半導体結晶成長講演会
  • Place of Presentation: 名城大学, 愛知県
  • Year and Date: 2014-07-15
• [Presentation] AlN 高温HVPE成長における基板昇降温プロセスが表面に与える影響 (2014)
  • Author(s): 東城俊介, 田中凌平, 額賀俊成, 富樫理恵, 永島徹, 木下亨, Baxter Moody, 村上尚, Ramon Collazo, 熊谷義直, 纐纈明伯, Zlatko Sitar
  • Organizer: 第6回窒化物半導体結晶成長講演会
  • Place of Presentation: 名城大学, 愛知県
  • Year and Date: 2014-07-15
• [Presentation] AlN/sapphireテンプレート上へのSiドープAlN層のHVPE成長の検討 (2014)
  • Author(s): 田中凌平, 東城俊介, 額賀俊成, 富樫理恵, 永島徹, 木下亨, Baxter Moody, 村上尚, Ramon Collazo, 熊谷義直, 纐纈明伯, Zlatko Sitar
  • Organizer: 第6回窒化物半導体結晶成長講演会
  • Place of Presentation: 名城大学, 愛知県
  • Year and Date: 2014-07-15
• [Presentation] 前駆体二段階生成HVPE法による高速・高温InN成長 (2014)
  • Author(s): 富樫理恵, 小島千恵，藤田直人，斉藤広伸，村上尚，熊谷義直，纐纈明伯
  • Organizer: 第6回窒化物半導体結晶成長講演会
  • Place of Presentation: 名城大学, 愛知県
  • Year and Date: 2014-07-15
• [Presentation] トリハライド気相成長法を用いたr面サファイヤ基板上へのGaN成長 (2014)
  • Author(s): 塩野杏奈，竹川直，藤村侑，村上尚，熊谷義直，纐纈明伯
  • Organizer: 第6回窒化物半導体結晶成長講演会
  • Place of Presentation: 名城大学, 愛知県
  • Year and Date: 2014-07-15
• [Presentation] Influence of Growth Temperature on InGaN Growth by Tri-Halide Vapor Phase Epitaxy (2014)
  • Author(s): Takahide Hirasaki, Yuta Watanabe, Masato Ishikawa, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
  • Organizer: 33rd Electronic Materials Symposium (EMS-33)
  • Place of Presentation: ラフォーレ修善寺, 静岡県
  • Year and Date: 2014-07-10
• [Presentation] Theoretical investigation of the influence of surface orientation on In-incorporation during InGaN growth using THVPE (2014)
  • Author(s): Yu Fujimura, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
  • Organizer: 33rd Electronic Materials Symposium (EMS-33)
  • Place of Presentation: ラフォーレ修善寺, 静岡県
  • Year and Date: 2014-07-10
• [Presentation] Selective growth of InN on patterned GaAs(110) substrate by MOVPE (2014)
  • Author(s): Hisashi Murakami, Yusuke Kitai, Thieu Quan Tu, Yoshinao Kumagai, and Akinori Koukitu
  • Organizer: 33rd Electronic Materials Symposium (EMS-33)
  • Place of Presentation: ラフォーレ修善寺, 静岡県
  • Year and Date: 2014-07-10
• [Presentation] Estimation of thermochemical data for the growth of group-III nitrides by the combination of first principles and statistical thermodynamic (2014)
  • Author(s): Nao Takekawa, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
  • Organizer: 33rd Electronic Materials Symposium (EMS-33)
  • Place of Presentation: ラフォーレ修善寺, 静岡県
  • Year and Date: 2014-07-10
• [Presentation] Temperature Dependence of InN Growth on Nitrided Yttria-Stabilized Zirconia (111) Substrates Using a Novel HVPE System (2014)
  • Author(s): Rie Togashi, Chie Kojima, Naoto Fujita, Hironobu Saito, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
  • Organizer: 5th International Symposium on Growth of III-Nitrides (ISGN-5)
  • Place of Presentation: Atlanta, Georgia, U.S.A.
  • Year and Date: 2014-05-20
• [Presentation] Hydride Vapor Phase Epitaxy and Doping of AlN (2014)
  • Author(s): Yoshinao Kumagai, Toru Nagashima, Toru Kinoshita, Baxter Moody, Rie Togashi, Hisashi Murakami, Ramon Collazo, Akinori Koukitu and Zlatko Sitar
  • Organizer: 5th International Symposium on Growth of III-Nitrides (ISGN-5)
  • Place of Presentation: Atlanta, Georgia, U.S.A.
  • Year and Date: 2014-05-19
  • Invited
• [Presentation] Growth of homoepitaxial ZnO thin layers by halide vapor phase epitaxy using non-hydrogenous sources (2014)
  • Author(s): Rintaro Asakawa, Yuta Isa, Naoto Kanzaki, Song-Yun Kang, Akihiko Hiroe, Rie Togashi, Hisashi Murakami, Yusaku Kashiwagi, Yoshinao Kumagai, and Akinori Koukitu
  • Organizer: Conference on LED and Its Industrial Application ’14 (LEDIA ’14)
  • Place of Presentation: パシフィコ横浜, 神奈川県
  • Year and Date: 2014-04-24
• [Presentation] Thermal stability of β-Ga2O3 substrates in mixed flows of H2 and N2 (2014)
  • Author(s): C. Eguchi, T. Fukizawa, S. Hanagata, K. Nomura, K. Goto, R. Togashi, H. Murakami, A. Kuramata, Y. Kumagai, and A. Koukitu
  • Organizer: Conference on LED and Its Industrial Application ’14 (LEDIA ’14)
  • Place of Presentation: パシフィコ横浜, 神奈川県
  • Year and Date: 2014-04-24
• [Presentation] High-speed InN growth on yttria-stabilized zirconia (111) substrates by a two-step precursor generation HVPE system (2014)
  • Author(s): C. Kojima, R. Togashi, R. Imai, N. Fujita, H. Saito, H. Murakami, Y. Kumagai, and A. Koukitu
  • Organizer: Conference on LED and Its Industrial Application ’14 (LEDIA ’14)
  • Place of Presentation: パシフィコ横浜, 神奈川県
  • Year and Date: 2014-04-24
• [Presentation] Surface orientation dependence of the In-incorporation of THVPE-grown InGaN studied by first principles and statistical thermodynamics (2014)
  • Author(s): Hisashi Murakami, Yu Fujimura, Rie Togashi, Yoshinao Kumagai, Akinori Koukitu
  • Organizer: Conference on LED and Its Industrial Application ’14 (LEDIA ’14)
  • Place of Presentation: パシフィコ横浜, 神奈川県
  • Year and Date: 2014-04-23
• [Presentation] 前駆体二段階生成HVPE法により作製したInN成長層の特性評価 (2014)
  • Author(s): 富樫理恵, 斉藤広伸，藤田直人，今井亮太，村上尚，熊谷義直，纐纈明伯
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス, 神奈川県
• [Presentation] InGaN成長におけるIn取り込みの面方位依存性の理論検討 (2014)
  • Author(s): 藤村侑, 村上尚，熊谷義直，纐纈明伯
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス, 神奈川県
• [Presentation] Growth of Semi-polar InN Layers on GaAs(311)A and (311)B by MOVPE (2013)
  • Author(s): Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
  • Organizer: Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
  • Place of Presentation: パシフィコ横浜, 神奈川県
• [Presentation] High-Speed Growth of In- and N-polarity InN Using a Two-Stage Source Generation Hydride Vapor Phase Epitaxy System (2013)
  • Author(s): R. Togashi, N. Fujita, R. Imai, H. Murakami, Y. Kumagai, and A. Koukitu
  • Organizer: Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
  • Place of Presentation: パシフィコ横浜, 神奈川県
• [Presentation] High-Speed Growth of InN over 10 μm/h by a Novel HVPE System (2013)
  • Author(s): N. Fujita, R. Imai, H. Saito, R. Togashi, H. Murakami, Y. Kumagai, and A. Koukitu
  • Organizer: Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
  • Place of Presentation: パシフィコ横浜, 神奈川県
• [Presentation] Deep-UV Transparent AlN Substrates Prepared by HVPE for UV-C LED Applications (2013)
  • Author(s): T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, and Z. Sitar
  • Organizer: Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
  • Place of Presentation: パシフィコ横浜, 神奈川県
• [Presentation] Semi-polar growth of InN on GaAs(11n) substrate by MOVPE (2013)
  • Author(s): Hisashi Murakami, Rie Togashi, Yoshinao Kumagai, Akinori Koukitu
  • Organizer: 2013 Collaborative Conference on Crystal Growth (3CG)
  • Place of Presentation: Cancun, Mexico
  • Invited
• [Presentation] 三塩化ガリウムを用いたGaN高温厚膜成長 (2013)
  • Author(s): 村上尚，宮崎智成，富樫理恵，熊谷義直，纐纈明伯
  • Organizer: 第5回窒化物半導体結晶成長講演会
  • Place of Presentation: 大阪大学, 大阪府
• [Presentation] HVPE法による深紫外光透過性を有する高品質AlNの成長 (2013)
  • Author(s): 額賀俊成，坂巻龍之介，久保田有紀，永島徹，木下亨，B. Moody，J. Xie，村上尚，熊谷義直， 纐纈明伯，Z. Sitar
  • Organizer: 第5回窒化物半導体結晶成長講演会
  • Place of Presentation: 大阪大学, 大阪府
• [Presentation] 前駆体二段階生成HVPE法によるInNの高速成長の実現 (2013)
  • Author(s): 藤田直人，斉藤広伸，今井亮太，富樫理恵，村上尚，熊谷義直，纐纈明伯
  • Organizer: 第5回窒化物半導体結晶成長講演会
  • Place of Presentation: 大阪大学, 大阪府
• [Presentation] 前駆体二段階生成HVPE装置を用いたIn極性およびN極性InN成長の比較検討 (2013)
  • Author(s): 斉藤広伸，藤田直人，今井亮太，富樫理恵，村上尚，熊谷義直，纐纈明伯
  • Organizer: 第5回窒化物半導体結晶成長講演会
  • Place of Presentation: 大阪大学, 大阪府
• [Presentation] GaAs(11n)基板上半極性InN成長の温度依存性 (2013)
  • Author(s): 北井佑典，佐久間文昭，富樫理恵，村上尚，熊谷義直，纐纈明伯
  • Organizer: 第5回窒化物半導体結晶成長講演会
  • Place of Presentation: 大阪大学, 大阪府
• [Presentation] Comparative Study on High-Speed InN Growth in Both In- and N-Polarities Using a Two-Stage Source Generation Hydride Vapor Phase Epitaxy System (2013)
  • Author(s): Rie Togashi, Naoto Fujita, Ryota Imai, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
  • Organizer: 10th International Conference on Nitride Semiconductors (ICNS-10)
  • Place of Presentation: Washington, D.C., U.S.A.
• [Presentation] Temperature Dependence of InN Growth by a Novel HVPE System with Two-Step Generation of InCl3 (2013)
  • Author(s): Naoto Fujita, Ryota Imai, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
  • Organizer: 10th International Conference on Nitride Semiconductors (ICNS-10)
  • Place of Presentation: Washington, D.C., U.S.A.
• [Presentation] Influence of Growth Temperature on Homo-Epitaxial Growth of AlN by HVPE on PVT-AlN Substrates (2013)
  • Author(s): Toshinari Nukaga, Ryunosuke Sakamaki, Yuki Kubota, Toru Nagashima, Toru Kinoshita, Baxter Moody, Jinqiao Xie, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu and Zlatko Sitar
  • Organizer: 10th International Conference on Nitride Semiconductors (ICNS-10)
  • Place of Presentation: Washington, D.C., U.S.A.
• [Presentation] 高温下におけるβ-Ga2O3 (010)基板表面安定性の検討 (2013)
  • Author(s): 蕗澤孝紘, 江口千尋，花形祥子，野村一城，後藤健，富樫理恵，村上尚，倉又朗人，熊谷義直，纐纈明伯
  • Organizer: 第74回応用物理学会学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス, 京都府
• [Presentation] ハライド気相成長法によるZnO薄膜成長の酸素源の検討 (2013)
  • Author(s): 神崎直人, 伊佐雄太，康松潤，富樫理恵，村上尚，熊谷義直，柏木勇作，纐纈明伯
  • Organizer: 第74回応用物理学会学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス, 京都府
• [Presentation] Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport (2013)
  • Author(s): 熊谷義直, 久保田有紀，永島徹，木下亨，Rafael Dalmau，Raoul Schlesser，Baxter Moody， Jinqiao Xie，村上尚，纐纈明伯，Zlatko Sitar
  • Organizer: 第74回応用物理学会学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス, 京都府
  • Invited
• [Presentation] 前駆体二段階生成HVPE法によるIn極性およびN極性InNの高速成長 (2013)
  • Author(s): 斉藤広伸, 藤田直人，今井亮太，富樫理恵，村上尚，熊谷義直，纐纈明伯
  • Organizer: 第74回応用物理学会学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス, 京都府
• [Presentation] High temperature growth of thick GaN using GaCl3-NH3 system (2013)
  • Author(s): Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: 同志社大学京田辺キャンパス, 京都府
  • Invited
• [Presentation] Demonstration of high-speed growth of InN by HVPE with a two-step precursor generation scheme (2013)
  • Author(s): Naoto Fujita, R. Imai, R. Togashi, H. Murakami, Y. Kumagai, and A. Koukitu
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: 同志社大学京田辺キャンパス, 京都府
• [Presentation] Dependence of InGaN-HVPE growth on group-III input partial pressure (2013)
  • Author(s): Takahide Hirasaki, M. Ishikawa, H. Murakami, Y. Kumagai, and A. Koukitu
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: 同志社大学京田辺キャンパス, 京都府
• [Presentation] Growth of high quality AlN with deep-UV transparency by HVPE (2013)
  • Author(s): Toshinari Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, and Z. Sitar
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: 同志社大学京田辺キャンパス, 京都府
• [Presentation] Influence of growth parameters on homo-epitaxial growth of thick AlN layers by HVPE on PVT-AlN substrates (2013)
  • Author(s): Y. Kumagai, T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, A. Koukitu, and Z. Sitar
  • Organizer: 8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
  • Place of Presentation: Seeon, Germany
  • Invited
• [Presentation] Properties of homoepitaxial AlN layers grown by HVPE on PVT-AlN substrates (2013)
  • Author(s): T. Nagashima , Y. Kubota, R. Okayama, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, R. Collazo, and Z. Sitar
  • Organizer: 8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
  • Place of Presentation: Seeon, Germany
  • Invited
• [Presentation] High speed and high temperature growth of GaN by HVPE using GaCl3 as group III-precursor (2013)
  • Author(s): H. Murakami ,Y. Kumagai,and A. Koukitu
  • Organizer: 8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
  • Place of Presentation: Seeon, Germany
  • Invited
• [Presentation] High-Speed InN Growth Using a Novel Two-Stage Source Generation Hydride Vapor Phase Epitaxy System (2013)
  • Author(s): R. Togashi , N. Fujita, R. Imai, H. Murakami, Y. Kumagai,and A. Koukitu
  • Organizer: 8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
  • Place of Presentation: Seeon, Germany
  • Invited
• [Presentation] Hydride Vapor Phase Epitaxy of InGaN (2013)
  • Author(s): A. Koukitu ,T. Hirasaki, H. Murakami and Y. Kumagai
  • Organizer: 8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
  • Place of Presentation: Seeon, Germany
  • Invited
• [Presentation] 前駆体二段階生成HVPE法によるInN成長の温度依存性 (2013)
  • Author(s): 藤田直人, 斉藤広伸，今井亮太，富樫理恵，村上尚，熊谷義直，纐纈明伯
  • Organizer: 第43回結晶成長国内会議（NCCG-43）
  • Place of Presentation: 長野市生涯学習センター, 長野県
• [Presentation] 前駆体二段階生成HVPE法によるIn, N各極性InN高速成長の比較検討 (2013)
  • Author(s): 斉藤広伸, 藤田直人，今井亮太，富樫理恵，村上尚，熊谷義直，纐纈明伯
  • Organizer: 第43回結晶成長国内会議（NCCG-43）
  • Place of Presentation: 長野市生涯学習センター, 長野県
• [Presentation] HVPE炉内高温雰囲気下におけるAlN単結晶表面の劣化 (2013)
  • Author(s): 坂巻龍之介, 額賀俊成，平連有紀，永島徹，木下亨，Baxter Moody，村上尚， R. Collazo，熊谷義直，纐纈明伯，Zlatko Sitar
  • Organizer: 第43回結晶成長国内会議（NCCG-43）
  • Place of Presentation: 長野市生涯学習センター, 長野県
• [Presentation] 水素・窒素雰囲気下におけるβ-Ga2O3 (010)基板表面安定性の検討 (2013)
  • Author(s): 蕗澤孝紘, 江口千尋，花形祥子，野村一城，後藤健，富樫理恵，村上尚，倉又朗人，熊谷義直，纐纈明伯
  • Organizer: 第43回結晶成長国内会議（NCCG-43）
  • Place of Presentation: 長野市生涯学習センター, 長野県
• [Presentation] 酸化亜鉛HVPEホモエピタキシャル成長のVI族源の比較検討 (2013)
  • Author(s): 神崎直人, 伊佐雄太，康松潤，富樫理恵，村上尚，熊谷義直，柏木勇作，纐纈明伯
  • Organizer: 第43回結晶成長国内会議（NCCG-43）
  • Place of Presentation: 長野市生涯学習センター, 長野県
• [Presentation] HVPE法によるPVT-AlN基板上ホモエピタキシャル成長における成長速度増加の検討 (2013)
  • Author(s): 額賀俊成, 坂巻龍之介，平連有紀，永島徹，木下亨，B. Moody，村上尚, R. Collazo，熊谷義直，纐纈明伯，Z. Sitar
  • Organizer: 第43回結晶成長国内会議（NCCG-43）
  • Place of Presentation: 長野市生涯学習センター, 長野県
• [Patent(Industrial Property Rights)] 窒化物半導体結晶、製造方法および製造装置 (2013)
  • Inventor(s): 纐纈明伯、熊谷義直、村上 尚
  • Industrial Property Rights Holder: 纐纈明伯、熊谷義直、村上 尚
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2013-188805
  • Filing Date: 2013-09-11
• [Patent(Industrial Property Rights)] β-Ga2O3系単結晶膜の成長方法、及び結晶積層構造体 (2013)
  • Inventor(s): 纐纈明伯、熊谷義直、村上 尚、後藤 健、佐々木公平
  • Industrial Property Rights Holder: 纐纈明伯、熊谷義直、村上 尚、後藤 健、佐々木公平
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2013-203198
  • Filing Date: 2013-09-30