Development of flexible flat panel displays using inorganic semiconductors

• Project/Area Number: 25420314
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Akita University
• Principal Investigator: Sato Yuichi 秋田大学, 理工学研究科, 准教授 (70215862)
• Co-Investigator(Kenkyū-buntansha): 齋藤 嘉一 秋田大学, 理工学研究科, 教授 (10302259)
• Project Period (FY): 2013-04-01 – 2017-03-31
• Project Status: Completed (Fiscal Year 2016)
• Budget Amount: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000); Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000); Fiscal Year 2013: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
• Keywords: 半導体 / 薄膜 / 半導体薄膜

Outline of Final Research Achievements

In this research, some underlying technologies of a novel and high performance flat panel display device using inorganic semiconductor materials were mainly investigated for realization of the device. The group-Ⅲ nitride semiconductor thin films were grown by plasma enhanced molecular beam epitaxy method, and crystallinities and photoluminescence properties of the onbained thin films were investigated.

Research Products

• [Journal Article] Morphologies and photoluminescence properties of GaN-based thin films grown on non-single-crystalline substrates (2017)
  • Author(s): Yuichi Sato, Atomu Fujiwara, Shota Ishizaki, Shun Nakane, and Yoshifumi Murakami
  • Journal Title: Phys. Status Solidi C Volume: 14 Issue: 1-2
  • DOI: 10.1002/pssc.201600151
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] GaN Thin-Film-Depositions on Glass and Amorphous-SiO2-Layer-Deposited Si Single-Crystalline Substrates (2016)
  • Author(s): Yuichi Sato
  • Journal Title: Materials Science Forum Volume: 879 Pages: 1703-1708
  • DOI: 10.4028/www.scientific.net/msf.879.1703
  • Peer Reviewed
• [Journal Article] Zr-Content Dependence of Electrical Properties in Heat-Treated In2O3: Zr Thin Films Grown on a Sapphire Substrate by Sputtering (2016)
  • Author(s): Yuichi Sato, Minoru Hatakeyama, Yuhei Muraki, Kazuki Sonoda, and Yoshifumi Murakami
  • Journal Title: International Journal of Advanced Applied Physics Research Volume: ３ Issue: 1 Pages: 1-4
  • DOI: 10.15379/2408-977x.2016.03.01.01
  • Peer Reviewed / Open Access
• [Journal Article] Some Properties of Group-Ⅲ Nitride Thin Films Directly Grown on Non-Single-Crystalline Substrates by Using a Molecular Beam Epitaxy Apparatus (2015)
  • Author(s): Yuichi Sato, Shota Ishizaki, Yoshifumi Murakami, Mohamad Idham, Nur Ain, and Tatsuya Matsunaga
  • Journal Title: J. Mod. Phys. Volume: 6 Issue: 09 Pages: 1289-1297
  • DOI: 10.4236/jmp.2015.69134
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Ⅲ族窒化物太陽電池における下部透明電極用In2O3系薄膜のスパッタリング法による作製及び諸特性 (2015)
  • Author(s): 村木佑平、佐藤祐一
  • Journal Title: 電子情報通信学会論文誌C Volume: J98-C Pages: 302-308
  • Peer Reviewed
• [Journal Article] Effects of two-step heat treatment on properties of In2O3:Zr thin film epitaxially grown on c-face sapphire substrate (2015)
  • Author(s): Yuichi Sato, Tadahiko Aoshima, and Yuhei Muraki
  • Journal Title: Jpn. J. Appl. Phys. Volume: -
  • Peer Reviewed
• [Journal Article] Growth of high-indium-content InGaN:Mg thin films by MBE method with dual RF nitrogen plasma cells (2014)
  • Author(s): Yuichi Sato, Tatsuya Matsunaga, Hiroki Takemoto, Yoshifumi Murakami, Yuhei Muraki, and Syota Ishizaki
  • Journal Title: Jpn. J. Appl. Phys. Volume: 53 Issue: 11S Pages: 11RC04-11RC04
  • DOI: 10.7567/jjap.53.11rc04
  • NAID: 210000144633
  • Peer Reviewed
• [Journal Article] Properties of GaN-related Epitaxial Thin Films Grown on Sapphire Substrates as Transparent Conducting Electrodes (2014)
  • Author(s): Yuichi Sato and Tatsuya Matsunaga
  • Journal Title: Materials Science Forum Volume: 783-786 Pages: 1652-1657
  • DOI: 10.4028/www.scientific.net/msf.783-786.1652
  • Peer Reviewed
• [Journal Article] Solid phase growth of some metal and metal oxide thin films on sapphire and quartz glass substrates (2013)
  • Author(s): Yuichi Sato, Toshifumi Suzuki, Hiroyuki Mogami, Fumito Otake, Hirotoshi Hatori, Suguru Igarashi
  • Journal Title: Materials science Forum Volume: 753 Pages: 505-509
  • Peer Reviewed
• [Journal Article] Variation of growth rate in InN molecular-beam-epitaxy growth using multiple radio-frequncy plasma cells (2013)
  • Author(s): Yuichi Sato, Kosuke Funaki
  • Journal Title: Jpn. J. Appl. Phys. Volume: 52
  • Peer Reviewed
• [Presentation] 非単結晶基板上GaN 系ナノ柱状結晶形成におけるIn 同時供給の影響 (2017)
  • Author(s): 藤原 亜斗武，下村 和輝，石崎 翔太，佐藤 祐一
  • Organizer: 2017年電子情報通信学会総合大会
  • Place of Presentation: 名城大学，名古屋市
  • Year and Date: 2017-03-22
• [Presentation] 非単結晶基板上に形成したGaN系半導体薄膜の表面モフォロジー (2016)
  • Author(s): 藤原 亜斗武，中根 駿，石崎 翔太，村上 佳詞，佐藤 祐一
  • Organizer: 2016年電子情報通信学会エレクトロニクスソサイエティ大会
  • Place of Presentation: 北海道大学，札幌市
  • Year and Date: 2016-09-20
• [Presentation] Variations in Photoluminescence Properties of GaN-based Thin Films Directly Grown on an Amorphous Quartz Glass Substrate (2016)
  • Author(s): Atom Fujiwara, Shota Ishizaki, Shun Nakane, Yoshifumi Murakami, and Yuichi Sato
  • Organizer: ISCS2016 The 43rd International Symposium on Compound Semiconductors
  • Place of Presentation: Toyama, Japan
  • Year and Date: 2016-06-26
  • Int'l Joint Research
• [Presentation] Reactive plasma depositions of gallium nitride thin films on amorphous substrates and their properties (2016)
  • Author(s): Yuichi Sato
  • Organizer: THERMEC'2016 Internatonal Conference on Processing and Manufacturing of Advanced Materials
  • Place of Presentation: Graz, Austria
  • Year and Date: 2016-05-29
  • Int'l Joint Research / Invited
• [Presentation] Annealing of In2O3:Zr Thin Films Grown on a Sapphire Substrate by Sputtering Method and Variations in the Electrical Properties as a Function of the Zr-Contents (2015)
  • Author(s): Yuichi Sato, Minoru Hatakeyama, Yuhei Muraki, Kazuki Sonoda, and Yoshifumi Murakami
  • Organizer: 25th Int. Photovoltaic Science and Engineeering Conference
  • Place of Presentation: BEXCO, プサン、韓国
  • Year and Date: 2015-11-15
  • Int'l Joint Research
• [Presentation] Enhancement of the Band-Edge Emission in Photoluminescence Spectra of GaN-Based Thin Films Grown on a Quartz Glass Substrate (2015)
  • Author(s): Shota Ishizaki, Yoshifumi Murakami, Atomu Fujiwara, Shun Nakane, and Yuichi Sato
  • Organizer: 6th Int. Symposium on Growth of Ⅲ-Nitrides
  • Place of Presentation: アクトシティ、浜松市
  • Year and Date: 2015-11-08
  • Int'l Joint Research
• [Presentation] Control of Optical-Absorption-Edge of InN Thin Films without Their Crystal-Structure-Changes by a Low-Temperature Heat-Treatment (2015)
  • Author(s): Yoshifumi Murakami, Shota Ishizaki, and Yuichi Sato
  • Organizer: 6th Int. Symposium on Growth of Ⅲ-Nitrides
  • Place of Presentation: アクトシティ、浜松市
  • Year and Date: 2015-11-08
  • Int'l Joint Research
• [Presentation] 石英ガラス基板上GaN薄膜のPLスペクトルにおける バンド端発光強度の変化に関する検討 (2015)
  • Author(s): 石崎 翔太、藤原 亜斗武、中根 駿、村上 佳詞、松永 竜弥、佐藤 祐一
  • Organizer: 2015年電子情報通信学会エレクトロニクスソサイエティ大会
  • Place of Presentation: 東北大学、仙台市
  • Year and Date: 2015-09-08
• [Presentation] InN薄膜の光学吸収端の不純物ドーピング または酸化処理による変化に関する検討 (2015)
  • Author(s): 村上 佳詞、石崎 翔太、佐藤 祐一
  • Organizer: 2015年電子情報通信学会エレクトロニクスソサイエティ大会
  • Place of Presentation: 東北大学、仙台市
  • Year and Date: 2015-09-08
• [Presentation] Properties of GaN and InGaN Thin Films Grown on Non-Single-Crystalline Substrates by MBE Using Single or Dual Nitrogen Plasma Cells (2015)
  • Author(s): YUICHI SATO, SYOTA ISHIZAKI, YOSHIFUMI MURAKAMI, MOHAMAD IDHAM, NUR AIN, YUHEI MURAKI , AND TATSUYA MATSUNAGA
  • Organizer: ISPlasma2015
  • Place of Presentation: 名古屋大学
  • Year and Date: 2015-03-26 – 2015-03-31
• [Presentation] Investigation on Sputter-Growths of In2O3 based Under-Electrodes on a Sapphire Substrate for Group-Ⅲ Nitride Solar Cells (2015)
  • Author(s): YUHEI MURAKI, SYOTA ISHIZAKI, YOSHIFUMI MURAKAMI, AND YUICHI SATO
  • Organizer: ISPlasma2015
  • Place of Presentation: 名古屋大学
  • Year and Date: 2015-03-26 – 2015-03-31
• [Presentation] 非単結晶基板上に成長したⅢ族窒化物半導体薄膜の結晶性および光学的特性 (2015)
  • Author(s): 石崎 翔太，村上 佳詞，松永 竜弥，モハマド イドハム，佐藤 祐一
  • Organizer: 2015年電子情報通信学会総合大会
  • Place of Presentation: 立命館大学
  • Year and Date: 2015-03-10 – 2015-03-13
• [Presentation] 不純物をドープした非晶質基板上Ⅲ族窒化物半導体薄膜の電気的特性の評価 (2015)
  • Author(s): 村上 佳詞， 石崎 翔太， ヌル アイン， 村木 佑平， 佐藤 祐一
  • Organizer: 2015年電子情報通信学会総合大会
  • Place of Presentation: 立命館大学
  • Year and Date: 2015-03-10 – 2015-03-13
• [Presentation] Ⅲ族窒化物薄膜太陽電池における透明下地層用In2O3系薄膜の低抵抗率化 (2015)
  • Author(s): 村木 佑平，石崎 翔太， 村上 佳詞， 畠山 穣， 佐藤 祐一
  • Organizer: 2015年電子情報通信学会総合大会
  • Place of Presentation: 立命館大学
  • Year and Date: 2015-03-10 – 2015-03-13
• [Presentation] Two-Step Heat-Treatment Effects on Properties of In2O3 Based Transparent Conducting Thin Films Epitaxially Grown on Sapphire Substrate (2014)
  • Author(s): T. Aoshima, Y. Muraki, and Y. Sato
  • Organizer: The 6th World Conf. on Photovoltaic Energy Conversion
  • Place of Presentation: 京都国際会館
  • Year and Date: 2014-11-23 – 2014-11-27
• [Presentation] 非晶質基板上に作製したGaNおよびInGaN薄膜の結晶性および光学的特性 (2014)
  • Author(s): 石崎 翔太，村上 佳詞，松永 竜弥，モハマド イドハム，佐藤 祐一
  • Organizer: 平成26年度電気関係学会東北支部連合大会
  • Place of Presentation: 山形大学
  • Year and Date: 2014-08-21 – 2014-08-22
• [Presentation] 非晶質基板上に作製したGaNおよびInGaN薄膜の電気的特性の評価 (2014)
  • Author(s): 村上 佳詞，石崎 翔太，松永 竜弥，ヌル アイン，佐藤 祐一
  • Organizer: 平成26年度電気関係学会東北支部連合大会
  • Place of Presentation: 山形大学
  • Year and Date: 2014-08-21 – 2014-08-22
• [Presentation] サファイアおよび石英上ZrドープIn2O3薄膜のスパッタ成膜時の酸素分圧に対する諸特性の変化 (2014)
  • Author(s): 村木 佑平, 青島 忠彦, 畠山 穣, 佐藤 祐一
  • Organizer: 平成26年度電気関係学会東北支部連合大会
  • Place of Presentation: 山形大学
  • Year and Date: 2014-08-21 – 2014-08-22
• [Presentation] On the growth of In-rich InGaN thin films by molecular beam epitaxy using multiple RF plasma cells and their p-type conduction (2014)
  • Author(s): Tastuya Matsunaga, Hiroki Takemoto, Syota Ishizaki, Yoshifumi Murakami, Yuhei Muraki, Tadahiko Aoshima, Yuichi Sato
  • Organizer: ISPlasma2014/IC-PLANTS2014
  • Place of Presentation: 名城大学、名古屋市
• [Presentation] 非単結晶基板上へのIII族窒化物半導体薄膜の結晶成長および諸特性 (2014)
  • Author(s): 石崎翔太、松永竜弥、村上佳詞、村木佑平、青島忠彦、佐藤祐一
  • Organizer: 2014年電子情報通信学会総合大会
  • Place of Presentation: 新潟大学、新潟市
• [Presentation] Solid phase heteroepitaxial growth of metal thin films on sapphire substrates (2013)
  • Author(s): Yuichi Sato, Hirotoshi Hatori, Suguru Igarashi
  • Organizer: 5th Int. Conf. on Recrystallization and Grain Growth
  • Place of Presentation: Sydney, Australlia
• [Presentation] Properties of GaN and AlGaN thin films epitaxially grown on sapphire substrate as transparent conducting underlayers (2013)
  • Author(s): Yuichi Sato, Tatsuya Matsunaga
  • Organizer: Int. Conf on Processing and Manufacturing of Advanced Materials
  • Place of Presentation: Las Vegas, USA
  • Invited
• [Patent(Industrial Property Rights)] 窒化物半導体の製造装置および製造方法 (2017)
  • Inventor(s): 佐藤祐一，齋藤嘉一
  • Industrial Property Rights Holder: 国立大学法人秋田大学
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2017-012847
  • Filing Date: 2017-01-27