3D InGaAs MOSFET with regrown source/drain
| Project/Area Number |
25420322
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
Kanazawa Toru 東京工業大学, 理工学研究科, 助教 (40514922)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2013: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | MOSFET / 化合物半導体 / MOVPE / マルチゲート / マルチゲート構造 / 有機金属気相成長法 / 高移動度チャネル |
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| Outline of Final Research Achievements |
This work was performed to realize the high-speed and low-power transistors for future logic applications. We proposed and fabricated the metal-oxide-semiconductor field-effect transistor with InGaAs channel for high electron mobility, multi-gate structure for low leakage current and regrown source for high current injection. For further improvement of the device performance, conditions of the regrowth and fabrication process of fin channels were investigated. As a result, the channel length of the transistor was scaled down to 16 nm and the improved performance was obtained.
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Report
(4 results)
Research Products
(13 results)
