Elucidation of dislocation generation mechanism from seed boundaries in mono-like Si crystals
| Project/Area Number |
25706018
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Crystal engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
YONENAGA Ichiro 東北大学, 金属材料研究所, 教授 (20134041)
OHNO Yutaka 東北大学, 金属材料研究所, 准教授 (80243129)
DEURA Momoko 東北大学, 金属材料研究所, 助教 (90609299)
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| Research Collaborator |
NINOMIYA Shunya
SUGIOKA Shota
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥22,100,000 (Direct Cost: ¥17,000,000、Indirect Cost: ¥5,100,000)
Fiscal Year 2015: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2014: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
Fiscal Year 2013: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
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| Keywords | 結晶粒界 / 転位 / 結晶成長 / 結晶欠陥 / シリコン / 太陽電池 / モノライク / 擬似単結晶 / 結晶工学 / 格子欠陥 |
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| Outline of Final Research Achievements |
Mono-like method is a next-generation manufacture process for solar cells to grow quasi-single crystalline silicon in a crucible with low production cost. The purpose of this study is to reveal generation mechanism of dislocations from seed joints (grain boundaries) during crystal growth of mono-like silicon. We performed (1) growth and characterization of mono-like silicon crystals with various grain boundary structure, (2) quantitative characterization of dislocations and grain boundaries using PL imaging, and (3) stress analysis using finite element method. We found correlations between grain boundary structure and stress applied on dislocations and between the structure and dislocation generation.
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Report
(4 results)
Research Products
(43 results)
