| Budget Amount *help |
¥23,400,000 (Direct Cost: ¥18,000,000、Indirect Cost: ¥5,400,000)
Fiscal Year 2016: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2015: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2014: ¥9,360,000 (Direct Cost: ¥7,200,000、Indirect Cost: ¥2,160,000)
Fiscal Year 2013: ¥8,840,000 (Direct Cost: ¥6,800,000、Indirect Cost: ¥2,040,000)
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| Outline of Final Research Achievements |
This research was focused on high-In composition In-based nitride semiconductors, and the development of fundamental crystal growth technologies, including the fabrication of high-quality crystal and the control of surface band structure, of these materials was carried out.
The pn-InGaN LED was fabricated utilizing growth technologies we obtained. Based on the problems of the characteristics of this LED, the growth mechanism of InGaN was further understood by introducing a novel monitoring technology during growth. The development of the fabrication technology of the buffer layer for the growth of InGaN, which is universal for entire alloy composition, was challengingly carried out. The comprehensive studies including physical properties for the InGaN films with entire alloy compositions we obtained were also carried out.
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