Phase control by electric-field effect toward novel transistor applications
| Project/Area Number |
25708040
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Device related chemistry
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| Research Institution | The University of Tokyo (2014)
Tohoku University (2013) |
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Principal Investigator |
NAKANO Masaki 東京大学, 工学(系)研究科(研究院), 講師 (70592228)
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| Project Period (FY) |
2013-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥25,870,000 (Direct Cost: ¥19,900,000、Indirect Cost: ¥5,970,000)
Fiscal Year 2014: ¥7,930,000 (Direct Cost: ¥6,100,000、Indirect Cost: ¥1,830,000)
Fiscal Year 2013: ¥17,940,000 (Direct Cost: ¥13,800,000、Indirect Cost: ¥4,140,000)
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| Keywords | 表面・界面物性 / 強相関エレクトロニクス / 電界効果 |
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| Outline of Final Research Achievements |
The idea of utilizing very large capacitance of electric-double layer (EDL) at a solid/electrolyte interface as a gate dielectric of field-effect transistors, namely EDL transistors (EDLTs), significantly increases a limit of the amount of surface charges controllable by electric-field effect, leading to remarkable demonstrations such as electric-field induced superconductivity and ferromagnetism. We have applied this EDLT technique to strongly-correlated materials, and found that EDLTs based on an archetypal correlated oxide, VO2, enables electrical switching of bulk state of matter beyond the fundamental electrostatic screening length, leading to remarkable changes in the infrared transmittance and the out-of-plane lattice parameter. These functions are not available with conventional field-effect devices based on band insulators, potentially beneficial for future low-energy-consumption electronics beyond conventional silicon-based technologies.
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Report
(3 results)
Research Products
(16 results)
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[Journal Article] Gate-tunable gigantic lattice deformation in VO22014
Author(s)
M. Nakano, S. Takeshita, H. Ohsumi, S. Tardif, K. Shibuya, T. Hatano, H. Yumoto, T. Koyama, H. Ohashi, M. Takata, M. Kawasaki, T. Arima, Y. Tokura, and Y. Iwasa
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Journal Title
Appl. Phys. Lett. 104
Volume: 104
Issue: 2
DOI
Related Report
Peer Reviewed / Acknowledgement Compliant
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[Presentation] Distinct substrate effects on the gate-induced metallic states in VO2 thin films2015
Author(s)
M. Nakano, D. Okuyama, M. Mizumaki, H. Osumi, M. Yoshida, T. Arima, M. Takata, M. Kawasaki, Y. Tokura, Y. Iwasa
Organizer
The March Meeting 2015 of the American Physical Society
Place of Presentation
Henry B. Gonzalez Convention Center, San Antonio, USA
Year and Date
2015-03-06
Related Report
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[Presentation] Gate control of electrical, optical and structural properties in VO22014
Author(s)
M. Nakano, D. Okuyama, K. Shibuya, N. Ogawa, T. Hatano, M. Kawasaki, T. Arima, Y. Iwasa, Y. Tokura
Organizer
International Workshop on Field-Effect Transistors and Functional Interfaces FET2014
Place of Presentation
Mitsui Garden Hotel Kashiwa-no-ha, Kashiwa, Chiba, Japan
Year and Date
2014-10-20
Related Report
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[Presentation] Crystal structure change accompanying insulator-metal phase transition in VO2 field-effect transistor2014
Author(s)
D. Okuyama, M. Nakano, S. Takeshita, S. Tardif, H. Ohsumi, K. Shibuya, T. Hatano, S. Ono, H. Yumoto, T. Koyama, H. Ohashi, M. Takata, M. Kawasaki, Y. Iwasa, T. Arima, Y. Tokura
Organizer
The March Meeting 2014 of the American Physical Society
Place of Presentation
Denver, USA
Related Report
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[Presentation] Electrostatic phase control of half-doped manganites2014
Author(s)
T. Hatano, Y. Ogimoto, Z. Sheng, N. Ogawa, M. Nakamura, M. Nakano, M. Kawasaki, Y. Iwasa, K. Miyano, Y. Tokura
Organizer
The March Meeting 2014 of the American Physical Society
Place of Presentation
Denver, USA
Related Report
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