Development of an organic monolayer Mott transistor
| Project/Area Number |
25810143
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Device related chemistry
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| Research Institution | Institute for Molecular Science |
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Principal Investigator |
SUDA Masayuki 分子科学研究所, 協奏分子システム研究センター, 助教 (80585159)
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| Project Period (FY) |
2013-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2014: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2013: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 電界効果トランジスタ / 自己組織化単分子膜 / モット絶縁体 / 電荷移動錯体 / モット転移 / 有機電荷移動錯体 |
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| Outline of Final Research Achievements |
In this research, an organic monolayer Mott field-effect transistor has been designed by fabricating the mixed self-assembled monolayer of TCNQ (Tetracyanoquinodimethane) and BEDT-TTF(Bis(ethylenedithio)tetrathiafulvalene) derivatives. The device obtained has a large single-domain monolayer in the range of 200 μm and showed n-type field effects. The observed ON/OFF ratio and field-effect mobility was higher than that of the FETs with bulk crystals, that demonstrated the superiority of the monolayer FET.
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Report
(3 results)
Research Products
(10 results)
