| Project/Area Number |
26220605
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| Research Category |
Grant-in-Aid for Scientific Research (S)
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| Allocation Type | Single-year Grants |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Nagoya University |
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Principal Investigator |
ZAIMA SHIGEAKI 名古屋大学, 未来社会創造機構, 教授 (70158947)
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| Co-Investigator(Kenkyū-buntansha) |
竹中 充 東京大学, 大学院工学系研究科(工学部), 准教授 (20451792)
齋藤 晃 名古屋大学, 未来材料・システム研究所, 教授 (50292280)
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| Research Collaborator |
NAKATSUKA Osamu 名古屋大学, 工学研究科, 教授 (20334998)
KUROSAWA Masashi 名古屋大学, 工学研究科, 講師 (40715439)
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| Project Period (FY) |
2014-05-30 – 2019-03-31
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| Project Status |
Completed (Fiscal Year 2018)
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| Budget Amount *help |
¥180,180,000 (Direct Cost: ¥138,600,000、Indirect Cost: ¥41,580,000)
Fiscal Year 2018: ¥19,110,000 (Direct Cost: ¥14,700,000、Indirect Cost: ¥4,410,000)
Fiscal Year 2017: ¥22,750,000 (Direct Cost: ¥17,500,000、Indirect Cost: ¥5,250,000)
Fiscal Year 2016: ¥33,670,000 (Direct Cost: ¥25,900,000、Indirect Cost: ¥7,770,000)
Fiscal Year 2015: ¥48,230,000 (Direct Cost: ¥37,100,000、Indirect Cost: ¥11,130,000)
Fiscal Year 2014: ¥56,420,000 (Direct Cost: ¥43,400,000、Indirect Cost: ¥13,020,000)
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| Keywords | 半導体物性 / 結晶工学 / 表面・界面物性 / ゲルマニウム錫 / エネルギーバンド / 結晶成長 / 集積回路 / Ⅳ族半導体 / IV族半導体 |
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| Outline of Final Research Achievements |
We have investigated the thin-film growth and process technologies of Sn-related group-IV semiconductor such as germanium-tin and germanium-silicon-tin alloys for applications of tunnel field-effect transistor and multifunctional photoelectric device those will contribute to next generation electronics. We developed engineering technologies of thin films, interface properties, energy band structure, and electronic device process, and also established fundamental engineering and science of Sn-related group-IV alloy semiconductors contributing to the progress of low-power consumption transistors and multifunctional electronic and optoelectronic devices.
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| Academic Significance and Societal Importance of the Research Achievements |
これまで未開拓であった新規Sn系IV族混晶半導体の結晶成長の学術を構築するとともに、エレクトロニクス応用上重要な様々な界面制御、プロセス技術の研究開発を推進し、新世代の電子・光電子デバイスの進展に資する多数の知見を獲得した。GeSnをはじめとするIV族半導体は次世代の省電力・高速・多機能集積・大容量エレクトロニクスの進歩に貢献できる材料であり、Society 5.0に代表される持続可能な省エネルギー産業や安全・安心な生活環境を実現できる超高度情報ネットワーク社会構築への寄与が期待できる。
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| Assessment Rating |
Verification Result (Rating)
A-
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Assessment Rating |
Result (Rating)
A: Progress in the research is steadily towards the initial goal. Expected research results are expected.
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