Study of melt growth mechanisms of multicrystalline Si by in situ observations
Project/Area Number |
26246016
|
Research Category |
Grant-in-Aid for Scientific Research (A)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Crystal engineering
|
Research Institution | Tohoku University |
Principal Investigator |
Fujiwara Kozo 東北大学, 金属材料研究所, 教授 (70332517)
|
Co-Investigator(Kenkyū-buntansha) |
沓掛 健太朗 東北大学, 金属材料研究所, 助教 (00463795)
|
Project Period (FY) |
2014-06-27 – 2017-03-31
|
Project Status |
Completed (Fiscal Year 2016)
|
Budget Amount *help |
¥43,030,000 (Direct Cost: ¥33,100,000、Indirect Cost: ¥9,930,000)
Fiscal Year 2016: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
Fiscal Year 2015: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
Fiscal Year 2014: ¥27,690,000 (Direct Cost: ¥21,300,000、Indirect Cost: ¥6,390,000)
|
Keywords | 固液界面 / Si多結晶 / その場観察 / 双晶界面 / 結晶成長 / 不純物偏析 / シリコン / 結晶粒界 |
Outline of Final Research Achievements |
The fundamental melt growth mechanisms of multicrystalline Si (mc-Si) were investigated to obtain valuable information for the development of crystal growth technology of mc-Si ingots for solar cells. We newly developed an in situ observation system for the direct observation of crystal/melt interface at high temperature as 1400℃. The effect of grain boundaries on the crystal growth behaviors was clarified. On the basis fo the fundamental understanding of crystal growth mechanisms, we developed a crystal growth technology for mc-Si ingot. We obtained high quality mc-Si ingot in comparison with the conventional one.
|
Report
(4 results)
Research Products
(19 results)
-
-
[Journal Article] Impact of local atomic stress on oxygen segregation at tilt boundaries silicon2017
Author(s)
Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
-
Journal Title
Applied Physics Letters
Volume: 110
Issue: 6
DOI
Related Report
Peer Reviewed
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-