|Budget Amount *help
¥35,750,000 (Direct Cost: ¥27,500,000、Indirect Cost: ¥8,250,000)
Fiscal Year 2017: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2016: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
Fiscal Year 2015: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
Fiscal Year 2014: ¥16,120,000 (Direct Cost: ¥12,400,000、Indirect Cost: ¥3,720,000)
|Outline of Final Research Achievements
The purpose of this study is to realize next-generation high mobility transistor channels using Si/Ge and Ge/Si core-shell heterostructure nanowires. We performed large-scale first principle calculations on K-computer and clarified electronic states in Si/Ge and Ge/Si core-shell nanowires (NWs) composed of 3 million atoms. Based on the theoretical results, we made it possible to form Si/Ge and Ge/Si core-shell NWs with sharp interfaces. We could also establish site-selective doping in core-shell NWs, resulting in the formation of high mobility channel by separating the carrier transport region from the impurity-doped region.