|Budget Amount *help
¥36,530,000 (Direct Cost: ¥28,100,000、Indirect Cost: ¥8,430,000)
Fiscal Year 2017: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000)
Fiscal Year 2016: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000)
Fiscal Year 2015: ¥8,840,000 (Direct Cost: ¥6,800,000、Indirect Cost: ¥2,040,000)
Fiscal Year 2014: ¥13,390,000 (Direct Cost: ¥10,300,000、Indirect Cost: ¥3,090,000)
|Outline of Final Research Achievements
Transition-metal oxides exhibit various functional properties not found in ordinary semiconductors. In recent years, with the rapid development of oxide-thin film growth technique, it has become possible to fabricate high-quality thin films and heterostructures. The atomic level control of surfaces and interfaces reveals a variety of novel physical properties and functionalities.
To investigate the origins of such functional properties on an atomic scale, we developed a scanning tunneling microscope combined with a pulsed-laser deposition system, and studied the atomic and electronic structures of the surfaces of the transition-metal oxide films.