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Understanding of carrier transport properties of Ge-On-Insulator CMOS and establishment of performance enhancement engineering

Research Project

Project/Area Number 26249038
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionThe University of Tokyo

Principal Investigator

Takagi Shinichi  東京大学, 大学院工学系研究科(工学部), 教授 (30372402)

Co-Investigator(Renkei-kenkyūsha) TAKENAKA Mitsuru  東京大学, 大学院工学系研究科, 准教授 (20451792)
Project Period (FY) 2014-04-01 – 2017-03-31
Project Status Completed (Fiscal Year 2016)
Budget Amount *help
¥41,470,000 (Direct Cost: ¥31,900,000、Indirect Cost: ¥9,570,000)
Fiscal Year 2016: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
Fiscal Year 2015: ¥13,000,000 (Direct Cost: ¥10,000,000、Indirect Cost: ¥3,000,000)
Fiscal Year 2014: ¥17,680,000 (Direct Cost: ¥13,600,000、Indirect Cost: ¥4,080,000)
KeywordsMOSFET / ゲルマニウム / 移動度 / 反転層 / サブバンド
Outline of Final Research Achievements

We have proposed and demonstrated a novel fabrication process including re-bonding GOI substrates to Si substrates for improving the GOI back interface quality and have succeeded in operation of 2-nm-thick GOI MOSFETs by a digital thinning process. It has been clarified through temperature dependence of mobility that mobility degradation of GOI MOSFETs with thinning GOI is attributable to thickness fluctuation scattering. We have modified the Ge condensation process by insertion of annealing steps, continuous thermal processes without any cooling and much longer cooing time, resulting in formation of GOI films with high compressive strain. Combined with the digital thinning process, we have succeeded in 4.5-nm-thick strained GOI MOSFETs with high mobility characteristics.

Report

(4 results)
  • 2016 Annual Research Report   Final Research Report ( PDF )
  • 2015 Annual Research Report
  • 2014 Annual Research Report

Research Products

(70 results)

All 2017 2016 2015 2014

All Journal Article (22 results) (of which Int'l Joint Research: 11 results,  Peer Reviewed: 20 results,  Acknowledgement Compliant: 15 results,  Open Access: 1 results) Presentation (47 results) (of which Int'l Joint Research: 25 results,  Invited: 24 results) Book (1 results)

  • [Journal Article] Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation2016

    • Author(s)
      M. Ke, X. Yu, C. Chang, M. Takenaka and S. Takagi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 109 Pages: 032101-032101

    • DOI

      10.1063/1.4958890

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] III-V/Ge MOS Device Technologies for Low Power Integrated Systems2016

    • Author(s)
      S. Takagi, M. Noguchi, M. Kim, S.-H. Kim, C.-Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke and M. Takenaka
    • Journal Title

      Solid State Electron.

      Volume: 125 Pages: 82-102

    • DOI

      10.1016/j.sse.2016.07.002

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Evaluation of mobility degradation factors and performance improvement of ultrathin-body Germanium-on-insulator (GOI) MOSFETs by GOI thinning using plasma oxidation2016

    • Author(s)
      X. Yu, J. Kang, M. Takenaka and S. Takagi
    • Journal Title

      IEEE Trans. Electron Devices,

      Volume: 64 Pages: 1418-1425

    • DOI

      10.1109/ted.2017.2662217

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Characterization of ultrathin-body Germanium-on-insulator (GeOI) structures and MOSFETs on flipped Smart-Cut GeOI substrates2016

    • Author(s)
      X. Yu, J. Kang, R. Zhang, M. Takenaka and S. Takagi
    • Journal Title

      Solid-State Electronics

      Volume: 115 Pages: 120-125

    • DOI

      10.1016/j.sse.2015.08.021

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Impact of Postdeposition Annealing Ambient on the Mobility of Ge nMOSFETs with 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks2016

    • Author(s)
      R. Zhang, X. Yu, M. Takenaka and S. Takagi
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 63 Pages: 558-564

    • DOI

      10.1109/ted.2015.2509961

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation2016

    • Author(s)
      R. Zhang, P. C. Huang, N. Taoka, M. Yokoyama, M. Takenaka and S. Takagi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 108 Pages: 052903-052903

    • DOI

      10.1063/1.4941538

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] III-V/Ge MOS Device Technologies for Low Power Integrated Systems2016

    • Author(s)
      S. Takagi, M. Noguchi, M. Kim, S.-H. Kim, C.-Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke and M. Takenaka
    • Journal Title

      Solid-State Electronics

      Volume: 108

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance2015

    • Author(s)
      K. Tanaka, R. Zhang, M. Takenaka and S. Takagi
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 54

    • NAID

      210000144949

    • Related Report
      2015 Annual Research Report 2014 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Properties of ultrathin-body condensation Ge-On-Insulator films thinned by additional thermal oxidation2015

    • Author(s)
      W.-K. Kim, M. Takenaka and S. Takagi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54 Issue: 4S Pages: 04DA05-04DA05

    • DOI

      10.7567/jjap.54.04da05

    • NAID

      210000144952

    • ISSN
      0021-4922, 1347-4065
    • Related Report
      2015 Annual Research Report 2014 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] “Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs2015

    • Author(s)
      X. Yu, J. Kang, R. Zhang, W.-L. Cai, M. Takenaka and S. Takagi
    • Journal Title

      Microelectron. Eng.

      Volume: 147 Pages: 196-200

    • DOI

      10.1016/j.mee.2015.04.063

    • Related Report
      2015 Annual Research Report 2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation2015

    • Author(s)
      M. Ke, X. Yu, R. Zhang, J. Kang, C. Chang, M. Takenaka and S. Takagi
    • Journal Title

      Microelectron. Eng.

      Volume: 147 Pages: 244-248

    • DOI

      10.1016/j.mee.2015.04.079

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] III-V/Ge Channel MOS Device Technologies in Nano CMOS era2015

    • Author(s)
      S. Takagi, R. Zhang, J. Suh, S.-H. Kim, M. Yokoyama, K. Nishi and M. Takenaka
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54 Issue: 6S1 Pages: 06FA01-06FA01

    • DOI

      10.7567/jjap.54.06fa01

    • NAID

      210000145217

    • ISSN
      0021-4922, 1347-4065
    • Related Report
      2015 Annual Research Report 2014 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] MOS Interface Control Technologies for Advanced III-V/ Ge Devices2015

    • Author(s)
      S. Takagi, C. Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke, J. H. Han, and M. Takenaka
    • Journal Title

      ECS Transactions

      Volume: 69(5) Pages: 37-51

    • DOI

      10.1149/06905.0037ecst

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Tunneling FET Technologies Using III-V and Ge Materials2015

    • Author(s)
      S. Takagi, M. Kim, M. Noguchi, K. Nishi, and M. Takenaka
    • Journal Title

      ECS Transactions

      Volume: 69 (10) Pages: 99-108

    • DOI

      10.1149/06910.0099ecst

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Effects of additional oxidation after Ge condensation on electrical properties of germanium-on-insulator p-channel MOSFETs2015

    • Author(s)
      J.-K. Suh, N. Taoka, M. Takenaka and S. Takagi
    • Journal Title

      Solid-State Electronics

      Volume: 117 Pages: 77-87

    • DOI

      10.1016/j.sse.2015.11.014

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Ultrathin body Germanium-on-insulator (GeOI) Pseudo-MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates2015

    • Author(s)
      X. Yu, R. Zhang, J. Kang, T. Maeda, T. Itatani, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    • Journal Title

      ECS Solid State Letters

      Volume: 4

    • DOI

      10.1149/2.0031502ssl

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation2015

    • Author(s)
      M. Ke, X. Yu, R. Zhang, J. Kang, C. Chang, M. Takenaka and S. Takagi
    • Journal Title

      Microelectronic Engineering

      Volume: 147

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs with GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation2014

    • Author(s)
      R. Zhang, X. Yu, M. Takenaka and S. Takagi
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 61 Pages: 2316-2323

    • DOI

      10.1109/ted.2014.2325604

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] New Materials for Post-Si Computing: Ge and GeSn Devices2014

    • Author(s)
      S. Gupta, X. Gong, R. Zhang, Y.-C. Yeo, S. Takagi and K. C. Saraswat
    • Journal Title

      MRS Bulletin

      Volume: 39 Pages: 678-686

    • DOI

      10.1557/mrs.2014.163

    • Related Report
      2014 Annual Research Report
    • Open Access
  • [Journal Article] Material Challenges and Opportunities in Ge/III-V channel MOSFETs2014

    • Author(s)
      S. Takagi, S.-H. Kim, M. Yokoyama, K. Nishi, R. Zhang and M. Takenaka
    • Journal Title

      ECS Transaction

      Volume: 64 Pages: 99-110

    • DOI

      10.1149/06411.0099ecst

    • Related Report
      2014 Annual Research Report
    • Acknowledgement Compliant
  • [Journal Article] Sb-Doped S/D Ultrathin body Ge-On-insulator nMOSFET fabricated by improved Ge condensation process2014

    • Author(s)
      W.-K. Kim, K. Kuroda, T. Osada, M. Hata, M. Takenaka and S. Takagi
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 61 Pages: 3379-3385

    • DOI

      10.1109/ted.2014.2350457

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impact of Channel Orientation on Electrical Properties of Ge p- and n-MOSFETs with 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks Fabricated by Plasma Postoxidation2014

    • Author(s)
      R. Zhang, X. Yu, M. Takenaka and S. Takagi
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 61 Pages: 3668-3675

    • DOI

      10.1109/ted.2014.2359678

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Presentation] MOS Interface Defect Control in Ge/IIIV Gate Stacks2017

    • Author(s)
      S. Takagi, M. Ke, C. Y. Chang, C. Yokoyama, M. Yokoyama, T. Gotow, K. Nishi, and M. Takenaka
    • Organizer
      232nd Electrochemical Society (ECS) Meeting, D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 15: In Memory of Samares Kar
    • Place of Presentation
      Gaylord National Resort and Convention Center, National Harbor, USA
    • Year and Date
      2017-10-01
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Reduction of slow trap density of Al2O3/GeOx/n-Ge MOS interfaces by inserting ultrathin Y2O3 interfacial layers2017

    • Author(s)
      M. Ke, M. Takenaka, and S. Takagi
    • Organizer
      20th Conference on Insulating Films on Semiconductors (INFOS 2017)
    • Place of Presentation
      Seminaris SeeHotel Potsdam, Potsdam, Germany
    • Year and Date
      2017-06-27
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] High Performance 4.5-nm-Thick Compressively-Strained Ge-on-Insulator pMOSFETs Fabricated by Ge Condensation with Optimized Temperature Control2017

    • Author(s)
      W.-K. Kim, M. Takenaka and S. Takagi
    • Organizer
      Symposium on VLSI technology
    • Place of Presentation
      京都リーガローヤルホテル(京都府京都市)
    • Year and Date
      2017-06-05
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] III-V-based low power CMOS devices on Si platform2017

    • Author(s)
      S. Takagi, D. H. Ahn, T. Gotow, M. Noguchi, K. Nishi, S.-H. Kim, M. Yokoyama, C.-Y. Chang, S.-H. Yoon, C. Yokoyama and M. Takenaka
    • Organizer
      IEEE International Conference on Integrated Circuit Design & Technology (ICICDT)
    • Place of Presentation
      Avaya Auditorium, Austin, USA
    • Year and Date
      2017-05-23
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] III-V/Ge MOSFETs and TFETs for Ultra-Low Power Logic LSIs2017

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      2017 International Symposium on VLSI Technology, Systems and Applications (2017 VLSI-TSA)
    • Place of Presentation
      Ambassador Hotel Hsinchu, Hsinchu, Taiwan
    • Year and Date
      2017-04-24
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] プラズマ後酸化によるALD Al2O3/Y2O3/GeOx/Geゲートスタックの電気特性2017

    • Author(s)
      柯夢南, 竹中充, 高木信一
    • Organizer
      第64回 応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県横浜市)
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] 酸化濃縮プロセスにおける冷却方法がGeOI中の圧縮ひずみに及ぼす効果2017

    • Author(s)
      金佑彊, 竹中充, 高木信一
    • Organizer
      第64回 応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県横浜市)
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] Influence of ALD High-k film deposition on plasma oxidation GeOx/Ge gate stacks2017

    • Author(s)
      M. Ke, M. Takenaka, and S. Takagi
    • Organizer
      10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar, "Atomically Controlled Processing for Ultralarge Scale Integration
    • Place of Presentation
      東北大学(宮城県仙台市)
    • Year and Date
      2017-02-13
    • Related Report
      2016 Annual Research Report
  • [Presentation] プラズマ酸化により形成したAl2O3/GeOx/Ge MOS界面の遅い準位の起源2017

    • Author(s)
      柯夢南, シャオ・ユウ, 張志宇, 竹中充, 高木信一
    • Organizer
      第22回電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―
    • Place of Presentation
      東レ研修センター(静岡県三島市)
    • Year and Date
      2017-01-20
    • Related Report
      2016 Annual Research Report
  • [Presentation] Ultra-low Power MOSFETs and Tunneling FETs using III-V and Ge2017

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      International Workshop on Nanodevice Technologies 2017 (IWNT 2017)
    • Place of Presentation
      広島大学(広島県東広島市)
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Carrier Transport Properties in Extremely-Thin Body GOI p-MOSFETs2016

    • Author(s)
      S. Takagi, X. Yu, J. Kang and M. Takenaka
    • Organizer
      Workshop on Atomically Controlled Processing for Ultra-large Scale Integration
    • Place of Presentation
      Forschungszentrum Julich, Julich, Germany
    • Year and Date
      2016-11-24
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Non-Si MOSFET and TFET for low-power circuits2016

    • Author(s)
      S. Takagi
    • Organizer
      2016 International Workshop for Ultra Low Power Nano-electronics for IoT
    • Place of Presentation
      Hanyang University, Seoul, Korea
    • Year and Date
      2016-10-18
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] III-V/Ge MOS Device Technologies for Ultra-Low Power LSIs2016

    • Author(s)
      S. Takagi
    • Organizer
      KIST PSI International Symposium,
    • Place of Presentation
      Korea Institute of Science and Technology (KIST), Seoul, Korea
    • Year and Date
      2016-09-22
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] GeOxNy 層の挿入によるAl2O3/n-Ge MOS界面の遅い準位密度低減2016

    • Author(s)
      柯夢南, シャオ・ユウ, 竹中充, 高木信一
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県新潟市)
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
  • [Presentation] Al2O3/GeOx/Ge MOS界面の遅い準位密度に与える界面構造の影響2016

    • Author(s)
      柯夢南, ユウ・シャオ, 竹中充, 高木信一
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学(東京都目黒区)
    • Year and Date
      2016-03-19
    • Related Report
      2015 Annual Research Report
  • [Presentation] 温度サイクルを減らした酸化濃縮法による高圧縮ひずみ極薄膜Ge-OI 構造の実現2016

    • Author(s)
      金佑彊, 竹中充, 高木信一
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学(東京都目黒区)
    • Year and Date
      2016-03-19
    • Related Report
      2015 Annual Research Report
  • [Presentation] 極薄膜Ge-On-Insulator(GOI) p-MOSFETのキャリア輸送特性2016

    • Author(s)
      ユウ・シャオ, 亢健, 竹中充, 高木信―
    • Organizer
      電子情報通信学会SDM研究会・応用物理学会シリコンテクノロジー分科会共催研究集会「先端CMOSデバイス・プロセス技術(IEDM特集)」
    • Place of Presentation
      機械振興会館(東京都港区)
    • Year and Date
      2016-01-28
    • Related Report
      2015 Annual Research Report
    • Invited
  • [Presentation] Control of slow traps of ALD Al2O3/Ge-based gate stacks with post plasma process2016

    • Author(s)
      M. Ke, X. Yu, M. Takenaka and S. Takagi
    • Organizer
      9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar, "Atomically Controlled Processing for Ultralarge Scale Integration”
    • Place of Presentation
      東北大学(宮城県仙台市)
    • Year and Date
      2016-01-11
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 極低電力LSIのための先端Ge MOSデバイス技術2016

    • Author(s)
      高木信一, シャオ・ユウ, 張睿, 柯夢南, 竹中充
    • Organizer
      第80回半導体・集積路技術シンポジウム
    • Place of Presentation
      東京理科大学森戸記念館(東京都新宿区)
    • Related Report
      2016 Annual Research Report
    • Invited
  • [Presentation] Experimental Study on Carrier Transport Properties in Extremely-Thin Body Ge-on-Insulator (GOI) p-MOSFETs with GOI Thickness down to 2 nm2015

    • Author(s)
      X. Yu, J. Kang, M. Takenaka and S. Takagi
    • Organizer
      International Electron Device Meeting (IEDM)
    • Place of Presentation
      Hilton Washington, Washington DC., USA
    • Year and Date
      2015-12-07
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Properties of slow traps of ALD Al2O3/GeOx/Ge gate stacks with plasma post oxidation2015

    • Author(s)
      M. Ke, X. Yu, M. Takenaka and S. Takagi
    • Organizer
      46th IEEE Semiconductor Interface Specialists Conference (SISC)
    • Place of Presentation
      Key Bridge Marriott, Arlington, USA
    • Year and Date
      2015-12-03
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Low Power MOS Device Technologies based on Heterogeneous Integration2015

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      2015 International Electron Devices and Materials Symposia (IEDMS)
    • Place of Presentation
      Kun Shan University, Tainan, Taiwan
    • Year and Date
      2015-11-19
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] MOS Interface Control Technologies for Advanced III-V/ Ge Devices2015

    • Author(s)
      S. Takagi, C. Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke, J. H. Han, and M. Takenaka
    • Organizer
      228th Fall meeting of the Electrochemical Society, D04 - Semiconductors, Dielectrics, and Metals for Nanoelectronics 13
    • Place of Presentation
      Hyatt Regency Hotel, Pheonix, Arizona, USA
    • Year and Date
      2015-10-11
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Tunneling FET Technologies Using III-V and Ge Materials2015

    • Author(s)
      S. Takagi, M. Kim, M. Noguchi, K. Nishi, and M. Takenaka
    • Organizer
      228th Fall meeting of the Electrochemical Society, G04 - ULSI Process Integration 9
    • Place of Presentation
      Hyatt Regency Hotel, Pheonix, Arizona, USA
    • Year and Date
      2015-10-11
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Tunneling FET Device Technologies Using III-V and Ge Materials2015

    • Author(s)
      S. Takagi, M. Kim, M. Noguchi, K. Nishi, M. Takenaka
    • Organizer
      4th Berkeley Symposium on Energy Efficient Electronic Systems (E3S)
    • Place of Presentation
      University of California, Berkeley, California, USA
    • Year and Date
      2015-10-02
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Ge/III-V MOS Device Technologies for Low Power Integrated Systems2015

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      45th European Solid-State Device Conference (ESSDERC)
    • Place of Presentation
      Messe Congress Graz Betriebsgesellschaft, Graz, Austria
    • Year and Date
      2015-09-14
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation2015

    • Author(s)
      M. Ke, X. Yu, R. Zhang, J. Kang, C. Chang, M. Takenaka, and S. Takagi
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県名古屋市)
    • Year and Date
      2015-09-13
    • Related Report
      2015 Annual Research Report
  • [Presentation] Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs2015

    • Author(s)
      X. Yu, J. Kang, R. Zhang, W.-L. Cai, M. Takenaka and S. Takagi
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県名古屋市)
    • Year and Date
      2015-09-13
    • Related Report
      2015 Annual Research Report
  • [Presentation] High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation2015

    • Author(s)
      Rui Zhang, Mitsuru Takenaka, Shinichi Takagi
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県名古屋市)
    • Year and Date
      2015-09-13
    • Related Report
      2015 Annual Research Report
  • [Presentation] 低消費LSIのためのIII-V族半導体およびGe/ひずみSOIトンネルFETテクノロジー2015

    • Author(s)
      高木信一, 金閔洙, 野口宗隆, ジ・サンミン, 西康一, 竹中充
    • Organizer
      応用物理学会シリコンテクノロジー分科会共催研究集会第184回研究集会「先端CMOSデバイス・プロセス技術(VLSIシンポジウム特集)」
    • Place of Presentation
      甲南大学ネットワークキャンパス東京(東京都千代田区)
    • Year and Date
      2015-08-17
    • Related Report
      2015 Annual Research Report
    • Invited
  • [Presentation] Advanced Nano CMOS using Ge/III-V semiconductors for Low Power Logic LSIs2015

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      15th IEEE International Conference on Nanotechnology
    • Place of Presentation
      Angelicum Congress Centre, Rome, Italy
    • Year and Date
      2015-07-27
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs2015

    • Author(s)
      X. Yu, J. Kang, R. Zhang, W.-L. Cai, M. Takenaka and S. Takagi
    • Organizer
      19th Conference on "Insulating Films on Semiconductors" (INFOS)
    • Place of Presentation
      University of Udine, Udine, Italy
    • Year and Date
      2015-06-29
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation2015

    • Author(s)
      M. Ke, X. Yu, R. Zhang, J. Kang, C. Chang, M. Takenaka and S. Takagi
    • Organizer
      19th Conference on "Insulating Films on Semiconductors" (INFOS)
    • Place of Presentation
      University of Udine, Udine, Italy
    • Year and Date
      2015-06-29
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] III-V and Ge tunneling FET technologies for low power LSIs2015

    • Author(s)
      S. Takagi, M.-S. Kim, M. Noguchi, S.-M. Ji, K. Nishi and M. Takenaka
    • Organizer
      Symposia on VLSI Technology
    • Place of Presentation
      京都リーガローヤルホテル(京都府京都市)
    • Year and Date
      2015-06-16
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] III-V/Ge MOSFETs and Tunneling FETs on Si platform for Low Power Logic Applications2015

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      13th International Meeting for Future of Electron Devices, Kansai (IMFEDK)
    • Place of Presentation
      龍谷大学アバンティ京都ホール(京都府京都市)
    • Year and Date
      2015-06-04
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Nano Device Technologies for Ultra Low Power LSIs2015

    • Author(s)
      S. Takagi
    • Organizer
      International Nanotechnology Conference on Communication and Cooperation (INC11)
    • Place of Presentation
      ヒルトン福岡シーホーク(福岡県福岡市)
    • Year and Date
      2015-05-11
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Ge/SiGe CMOS device technology for future logic LSIs2015

    • Author(s)
      S. Takagi, W.-K. Kim, X. Yu, J.-h. Han, R. Zhang and M. Takenaka
    • Organizer
      E-MRS Spring meeting 2015, Symposium K, "Transport and photonics in group IV-based nanodevices"
    • Place of Presentation
      Lille Grand Palace, Lille, France
    • Year and Date
      2015-05-11
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Gate stack technologies for high mobility channel MOSFETs2015

    • Author(s)
      S. Takagi, R. Zhang, C.-Y. Chang, J.-H. Han, M. Yokoyama and M. Takenaka
    • Organizer
      2015 MRS Spring Meeting & Exhibit, Sympoium AA, “Materials for Beyond the Roadmap Devices in Logic, Power and Memory”
    • Place of Presentation
      Moscone West Convention Center, San Francisco, USA
    • Year and Date
      2015-04-06 – 2015-04-10
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Gate stack technologies for high mobility channel MOSFETs2015

    • Author(s)
      S. Takagi, R. Zhang, C.-Y. Chang, J.-H. Han, M. Yokoyama and M. Takenaka
    • Organizer
      2015 MRS Spring Meeting & Exhibit, Sympoium AA, “Materials for Beyond the Roadmap Devices in Logic, Power and Memory”
    • Place of Presentation
      Moscone West Convention Cener, San Francisco, USA
    • Year and Date
      2015-04-06
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Mobility improvement of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs on flipped Smart-Cut GeOI substrates2015

    • Author(s)
      X. Yu, J. Kang, R. Zhang, M. Takenaka and S. Takagi
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス(神奈川県平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Related Report
      2014 Annual Research Report
  • [Presentation] Mobility improvement of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs on flipped Smart-Cut GeOI substrates2015

    • Author(s)
      X. Yu, J. Kang, R. Zhang, M. Takenaka and S. Takagi
    • Organizer
      Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
    • Place of Presentation
      Aula Prodi, Bologna, Italy
    • Year and Date
      2015-01-26 – 2015-01-28
    • Related Report
      2014 Annual Research Report
  • [Presentation] III-V/Ge Channel MOS Device Technologies in Nano CMOS era2014

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      27th International Microprocesses and Nanotechnology Conference (MNC)
    • Place of Presentation
      ヒルトン福岡シーホーク(福岡県福岡市)
    • Year and Date
      2014-11-04 – 2014-11-07
    • Related Report
      2014 Annual Research Report
  • [Presentation] Material Challenges and Opportunities in Ge/III-V channel MOSFETs2014

    • Author(s)
      S. Takagi, S.-H. Kim, M. Yokoyama, K. Nishi, R. Zhang and M. Takenaka
    • Organizer
      226th Fall meeting of the Electrochemical Society, P3 - High Purity and High Mobility Semiconductors 13
    • Place of Presentation
      Moon Palace Resort, Cancun, Mexico
    • Year and Date
      2014-10-05 – 2014-10-10
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance2014

    • Author(s)
      K. Tanaka, R. Zhang, M. Takenaka and S. Takagi
    • Organizer
      46th International Conference on Solid State Devices and Materials (SSDM)
    • Place of Presentation
      つくば国際会議場(茨城県つくば市)
    • Year and Date
      2014-09-09 – 2014-09-11
    • Related Report
      2014 Annual Research Report
  • [Presentation] Properties of ultrathin body condensation GOI films thinned by additional thermal oxidation2014

    • Author(s)
      W.-K. Kim, M. Takenka and S. Takagi
    • Organizer
      46th International Conference on Solid State Devices and Materials (SSDM)
    • Place of Presentation
      つくば国際会議場(茨城県つくば市)
    • Year and Date
      2014-09-09 – 2014-09-11
    • Related Report
      2014 Annual Research Report
  • [Presentation] III-V/Ge CMOS Device Technologies for Future Logic LSIs2014

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      7th International SiGe Technology and Device Meeting (ISTDM)
    • Place of Presentation
      Swissotel Merchant Court, Singapore, Singapore
    • Year and Date
      2014-06-02 – 2014-06-04
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates2014

    • Author(s)
      X. Yu, R. Zhang, J. Kang, T. Osada, M. Hata, M. Takenaka and S. Takagi
    • Organizer
      21st International Symposium on VLSI Technology, Systems and Applications (2014 VLSI-TSA)
    • Place of Presentation
      Ambassador Hotel, Hsinchu, Taiwan
    • Year and Date
      2014-04-28 – 2014-04-30
    • Related Report
      2014 Annual Research Report
  • [Book] Photonics and Electronics with Germanium, chapter 6 "Ge Condensation and Its Device Application"2015

    • Author(s)
      S. Takagi
    • Publisher
      Wiley-VCH
    • Related Report
      2015 Annual Research Report

URL: 

Published: 2014-04-04   Modified: 2018-03-22  

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