Understanding of carrier transport properties of Ge-On-Insulator CMOS and establishment of performance enhancement engineering
| Project/Area Number |
26249038
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
Takagi Shinichi 東京大学, 大学院工学系研究科(工学部), 教授 (30372402)
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| Co-Investigator(Renkei-kenkyūsha) |
TAKENAKA Mitsuru 東京大学, 大学院工学系研究科, 准教授 (20451792)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥41,470,000 (Direct Cost: ¥31,900,000、Indirect Cost: ¥9,570,000)
Fiscal Year 2016: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
Fiscal Year 2015: ¥13,000,000 (Direct Cost: ¥10,000,000、Indirect Cost: ¥3,000,000)
Fiscal Year 2014: ¥17,680,000 (Direct Cost: ¥13,600,000、Indirect Cost: ¥4,080,000)
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| Keywords | MOSFET / ゲルマニウム / 移動度 / 反転層 / サブバンド |
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| Outline of Final Research Achievements |
We have proposed and demonstrated a novel fabrication process including re-bonding GOI substrates to Si substrates for improving the GOI back interface quality and have succeeded in operation of 2-nm-thick GOI MOSFETs by a digital thinning process. It has been clarified through temperature dependence of mobility that mobility degradation of GOI MOSFETs with thinning GOI is attributable to thickness fluctuation scattering. We have modified the Ge condensation process by insertion of annealing steps, continuous thermal processes without any cooling and much longer cooing time, resulting in formation of GOI films with high compressive strain. Combined with the digital thinning process, we have succeeded in 4.5-nm-thick strained GOI MOSFETs with high mobility characteristics.
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Report
(4 results)
Research Products
(70 results)
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[Presentation] MOS Interface Defect Control in Ge/IIIV Gate Stacks2017
Author(s)
S. Takagi, M. Ke, C. Y. Chang, C. Yokoyama, M. Yokoyama, T. Gotow, K. Nishi, and M. Takenaka
Organizer
232nd Electrochemical Society (ECS) Meeting, D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 15: In Memory of Samares Kar
Place of Presentation
Gaylord National Resort and Convention Center, National Harbor, USA
Year and Date
2017-10-01
Related Report
Int'l Joint Research / Invited
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[Presentation] III-V-based low power CMOS devices on Si platform2017
Author(s)
S. Takagi, D. H. Ahn, T. Gotow, M. Noguchi, K. Nishi, S.-H. Kim, M. Yokoyama, C.-Y. Chang, S.-H. Yoon, C. Yokoyama and M. Takenaka
Organizer
IEEE International Conference on Integrated Circuit Design & Technology (ICICDT)
Place of Presentation
Avaya Auditorium, Austin, USA
Year and Date
2017-05-23
Related Report
Int'l Joint Research / Invited
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[Presentation] MOS Interface Control Technologies for Advanced III-V/ Ge Devices2015
Author(s)
S. Takagi, C. Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke, J. H. Han, and M. Takenaka
Organizer
228th Fall meeting of the Electrochemical Society, D04 - Semiconductors, Dielectrics, and Metals for Nanoelectronics 13
Place of Presentation
Hyatt Regency Hotel, Pheonix, Arizona, USA
Year and Date
2015-10-11
Related Report
Int'l Joint Research / Invited
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[Presentation] Ge/SiGe CMOS device technology for future logic LSIs2015
Author(s)
S. Takagi, W.-K. Kim, X. Yu, J.-h. Han, R. Zhang and M. Takenaka
Organizer
E-MRS Spring meeting 2015, Symposium K, "Transport and photonics in group IV-based nanodevices"
Place of Presentation
Lille Grand Palace, Lille, France
Year and Date
2015-05-11
Related Report
Int'l Joint Research / Invited
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[Presentation] Gate stack technologies for high mobility channel MOSFETs2015
Author(s)
S. Takagi, R. Zhang, C.-Y. Chang, J.-H. Han, M. Yokoyama and M. Takenaka
Organizer
2015 MRS Spring Meeting & Exhibit, Sympoium AA, “Materials for Beyond the Roadmap Devices in Logic, Power and Memory”
Place of Presentation
Moscone West Convention Center, San Francisco, USA
Year and Date
2015-04-06 – 2015-04-10
Related Report
Invited
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[Presentation] Gate stack technologies for high mobility channel MOSFETs2015
Author(s)
S. Takagi, R. Zhang, C.-Y. Chang, J.-H. Han, M. Yokoyama and M. Takenaka
Organizer
2015 MRS Spring Meeting & Exhibit, Sympoium AA, “Materials for Beyond the Roadmap Devices in Logic, Power and Memory”
Place of Presentation
Moscone West Convention Cener, San Francisco, USA
Year and Date
2015-04-06
Related Report
Int'l Joint Research / Invited
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