|Budget Amount *help
¥41,470,000 (Direct Cost: ¥31,900,000、Indirect Cost: ¥9,570,000)
Fiscal Year 2017: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000)
Fiscal Year 2016: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2015: ¥10,400,000 (Direct Cost: ¥8,000,000、Indirect Cost: ¥2,400,000)
Fiscal Year 2014: ¥19,500,000 (Direct Cost: ¥15,000,000、Indirect Cost: ¥4,500,000)
|Outline of Final Research Achievements
In our project, we have obtained various results mainly related to the realization of spin transistors, as follows. 1) Operation of vertical spin transistors using ferromagnetic semiconductor GaMnAs. 2) Observations of novel physics using the quantum size effect of GaMnAs quantum wells. 3) Large magnetoresistance in a lateral spin valve device using GaMnAs. 4) First realization of room temperature operation of a vertical spin transistor using an oxide semiconductor. 5) Understanding of the origin of the ferromagnetism of new magnetic semiconductors based on Ge 6) Observation of peculiar spin tunneling transport in ferromagnetic perovskite oxide heterostructures. 7) First realization of spin-to-charge conversion in a topological crystalline insulator. 8) Ultra fast control of a band structure and magnetization using ultra short light pulses.