| Project/Area Number |
26286045
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Crystal engineering
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| Research Institution | Meijo University |
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Principal Investigator |
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| Research Collaborator |
KAMIYAMA Satoshi 名城大学, 理工学部, 教授 (10340291)
IWAYA Motoaki 名城大学, 理工学部, 准教授 (40367735)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥16,120,000 (Direct Cost: ¥12,400,000、Indirect Cost: ¥3,720,000)
Fiscal Year 2016: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2015: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2014: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000)
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| Keywords | ワイドギャップ半導体 / 窒化物半導体 / p型 / 分極ドーピング / トンネル接合 / 光デバイス / 分極 / 低温成長 / ワイドギャップ / 正孔 / エピタキシャル / トンネル現象 / 誘電体物性 / 半導体物性 |
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| Outline of Final Research Achievements |
In order to solve high resistivity and low hole concentration in p-type widegap nitride-based semiconductors, we proposed three novel approaches, such as tunnel junctions, polarization doping, and valence band control, and developed the approaches in novel optoelectronic devices. As a result, the lowest resistive MOCVD-grown tunnel junction has been achieved and utilized in current confined micro LED. In addition, high carrier concentrations (over 1x1018cm-3) in high Al content nitride-based semiconductors have been obtained by polarization doping. Deep ultraviolet LEDs and VCSELs with vertical current injections have been demonstrated by the polarization doping.
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