Novel approaches for hole injections in widegap semiconductors and their applications to novel light-emitting devices
Project/Area Number |
26286045
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Partial Multi-year Fund |
Section | 一般 |
Research Field |
Crystal engineering
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Research Institution | Meijo University |
Principal Investigator |
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Research Collaborator |
KAMIYAMA Satoshi 名城大学, 理工学部, 教授 (10340291)
IWAYA Motoaki 名城大学, 理工学部, 准教授 (40367735)
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Project Period (FY) |
2014-04-01 – 2017-03-31
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Project Status |
Completed (Fiscal Year 2016)
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Budget Amount *help |
¥16,120,000 (Direct Cost: ¥12,400,000、Indirect Cost: ¥3,720,000)
Fiscal Year 2016: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2015: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2014: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000)
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Keywords | ワイドギャップ半導体 / 窒化物半導体 / p型 / 分極ドーピング / トンネル接合 / 光デバイス / 分極 / 低温成長 / ワイドギャップ / 正孔 / エピタキシャル / トンネル現象 / 誘電体物性 / 半導体物性 |
Outline of Final Research Achievements |
In order to solve high resistivity and low hole concentration in p-type widegap nitride-based semiconductors, we proposed three novel approaches, such as tunnel junctions, polarization doping, and valence band control, and developed the approaches in novel optoelectronic devices. As a result, the lowest resistive MOCVD-grown tunnel junction has been achieved and utilized in current confined micro LED. In addition, high carrier concentrations (over 1x1018cm-3) in high Al content nitride-based semiconductors have been obtained by polarization doping. Deep ultraviolet LEDs and VCSELs with vertical current injections have been demonstrated by the polarization doping.
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Report
(4 results)
Research Products
(90 results)
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[Journal Article] GaInN-based tunnel junctions with graded layers2016
Author(s)
Daiki Takasuga, Yasuto Akatsuka, Masataka Ino, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
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Journal Title
Applied Physics Express
Volume: 9
Issue: 8
Pages: 081005-081005
DOI
NAID
Related Report
Peer Reviewed / Acknowledgement Compliant
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[Presentation] 1.7-mW nitride-based vertical-cavity surface-emitting lasers using AlInN/GaN bottom DBRs2016
Author(s)
T. Furuta, K. Matsui, Y. Kozuka, S. Yoshida, N. Hayasi, T. Akagi, N. Koide, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
Organizer
The 25th International Semiconductor Laser Conference (ISLC2016)
Place of Presentation
Kobe, Japan
Related Report
Int'l Joint Research
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[Presentation] GaNSb alloys grown under H2carrier gases2015
Author(s)
Daisuke Komori, Kaku Takarabe, Kenta Suzuki, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
Organizer
The 6th International Symposium on Growth of III-Nitrides
Place of Presentation
Hamamatsu, Japan
Year and Date
2015-11-08
Related Report
Int'l Joint Research
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[Presentation] AlN epitaxial growth on sapphire with an intermediate layer2015
Author(s)
Syouta Katsuno, Toshiki Yasuda, Motoaki Iwaya, Testuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
Organizer
The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications
Place of Presentation
Yokohama, Japan
Year and Date
2015-04-22 – 2015-04-24
Related Report
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[Presentation] Carrier gas dependence on GaNSb MOVPE growth2015
Author(s)
Daisuke Komori, Hiroki Sasajima, Kaku Takarabe, Kenta Suzuki, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu.Akasaki
Organizer
The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications
Place of Presentation
Yokohama, Japan
Year and Date
2015-04-22 – 2015-04-24
Related Report
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[Presentation] MOVPE grouwth of AlNSb alloys2015
Author(s)
Kenta Suzuki, Daisuke Komori, Hiroki Sasajima, Kaku Takarabe, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
Organizer
The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications
Place of Presentation
Yokohama, Japan
Year and Date
2015-04-22 – 2015-04-24
Related Report
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[Presentation] MOVPE Growth of AlNSb Alloys2015
Author(s)
K. Suzuki, D. Komori, H. Sasajima, K. Takarabe, T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
Organizer
The 3rd International Confenerce on Light-Emitting Devices and thier Induatrial Applications
Place of Presentation
Yokohama, Japan
Year and Date
2015-04-22
Related Report
Int'l Joint Research
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[Presentation] Carrier Gas Dependence on GaNSb MOVPE Growth2015
Author(s)
D. Komori, H. Sasajima, K. Takarabe, K. Suzuki, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
Organizer
The 3rd International Confenerce on Light-Emitting Devices and thier Induatrial Applications
Place of Presentation
Yokohama, Japan
Year and Date
2015-04-22
Related Report
Int'l Joint Research
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[Presentation] Nitride-Based Tunnel Junctions towards Deep UV-LEDs2015
Author(s)
D. Takasuka, D. Minamikawa, M. Ino, T. Takeuchi, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
Organizer
The 3rd International Confenerce on Light-Emitting Devices and thier Induatrial Applications
Place of Presentation
Yokohama, Japan
Year and Date
2015-04-22
Related Report
Int'l Joint Research
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