Control of Photons and Spins of High-Brightness Single Photon Center in Silicon Carbide
Project/Area Number |
26286047
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Partial Multi-year Fund |
Section | 一般 |
Research Field |
Crystal engineering
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Research Institution | National Institutes for Quantum and Radiological Science and Technology (2016) Japan Atomic Energy Agency (2014-2015) |
Principal Investigator |
OHSHIMA Takeshi 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所 先端機能材料研究部, 上席研究員 (50354949)
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Co-Investigator(Kenkyū-buntansha) |
藤ノ木 享英 (梅田享英 / 藤ノ木 享英(梅田享英)) 筑波大学, 数理物質科学研究科(系), 准教授 (10361354)
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Co-Investigator(Renkei-kenkyūsha) |
ONODA Shinobu 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所・先端機能材料研究部, 主幹研究員(定常) (30414569)
|
Project Period (FY) |
2014-04-01 – 2017-03-31
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Project Status |
Completed (Fiscal Year 2016)
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Budget Amount *help |
¥15,860,000 (Direct Cost: ¥12,200,000、Indirect Cost: ¥3,660,000)
Fiscal Year 2016: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2015: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000)
Fiscal Year 2014: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
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Keywords | 結晶工学 / 格子欠陥 / 半導体物性 / 光物性 / 放射線 |
Outline of Final Research Achievements |
Exploration of single photon sources (SPSs) in silicon carbide (SiC) and creation of silicon vacancy (Vsi) which acts as SPS in SiC were investigated. High-brightness SPSs were found near the surface of SiC, and luminescence from the SPSs was stabilized by oxygen treatment above 550C, although the structure of the SPSs has not yet identified. Furthermore, it was found that the SPSs can be created in SiC devices such as pn diodes and metal-oxide-semiconductor field effect transistors (MOSFETs). In addition, Vsi can be created at certain locations of SiC by proton beam writing (PBW) with accelerating energies of MeV range without any post-irradiation process such as annealing. Also, the creation yield of Vsi was estimated to be 10 % of irradiated proton fluences.
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Report
(4 results)
Research Products
(38 results)
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[Journal Article] Scalable Quantum Photonics with Single Color Centers in Silicon Carbide2017
Author(s)
M. Radulaski, M. Widmann, M. Niethammer, J. L. Zhang, S.-Y. Lee, T. Rendler, K. G. Lagoudakis, N. T. Son, E. Janzeen, T. Ohshima, J. Wrachtrup, J. Vuckovic
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Journal Title
Nano Letters
Volume: 17
Issue: 3
Pages: 1782-1786
DOI
Related Report
Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
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[Journal Article] Creation and Functionalization of Defects in SiC by Proton Beam Writing2017
Author(s)
T. Ohshima, T. Honda, S. Onoda, T. Makino, M. Haruyama, T. Kamiya, T. Satoh, Y. Hijikata, W. Kada, O. Hanaizumi, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. V. Astakhov
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Journal Title
Mater. Sci. Forum
Volume: 897
Pages: 233-237
DOI
Related Report
Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
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[Journal Article] Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide2017
Author(s)
H. Kraus, D. Simin, C. Kasper, Y. Suda, S. Kawabata, W. Kada, T. Honda, Y. Hijikata, T. Ohshima, V. Dyakonov, G. V. Astakhov
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Journal Title
Nano Letters
Volume: -
Issue: 5
Pages: 2865-2870
DOI
Related Report
Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
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[Journal Article] Activation and Control of Visible Single Defects in 4H-, 6H-, and 3C-SiC by Oxidation2016
Author(s)
A. Lohrmann, S. Castelletto, J. R. Klein, T. Ohshima, M. Bosi, M. Negri, D. W. M. Lau, B. C. Gibson, S. Prawer, J. C. McCallum and B. C. Johnson
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Journal Title
Applied Physics Letter
Volume: 108
Issue: 2
DOI
Related Report
Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
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[Journal Article] Single-Photon Emitting Diode in Silicon Carbide2015
Author(s)
A. Lohrmann, N. Iwamoto, Z. Bodrog, S. Castelletto, T. Ohshima, T. J. Karle, A. Gali, S. Prawer, J. C. McCallum and B. C. Johnson
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Journal Title
Nature Communications
Volume: 6
Issue: 1
DOI
Related Report
Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
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[Journal Article] Coherent Control of Single Spins in Silicon Carbide at Room Temperature2015
Author(s)
MatthiasWidmann, Sang-Yun Lee, Torsten Rendler, Nguyen Tien Son, Helmut Fedder, Seoyoung Paik, Li-Ping Yang, Nan Zhao, Sen Yang, Ian Booker, Andrej Denisenko, Mohammad Jamali, S. Ali Momenzadeh, Ilja Gerhardt, Takeshi Ohshima, Adam Gali, Erik Janzen and Jorg Wrachtrup
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Journal Title
Nature Materials
Volume: 14
Issue: 2
Pages: 165-168
DOI
Related Report
Peer Reviewed / Open Access / Acknowledgement Compliant
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[Presentation] Creation of Single Photon Sources in Wide Bandgap Semiconductors by Ion Irradiation2016
Author(s)
T. Ohshima, T. Honda, S. Onoda, T. Makino, Y. Hijikata, A. Lohrmann, J. R. Klein, B. C. Johnson3, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. Astakhov
Organizer
第26回 日本MRS年次大会
Place of Presentation
横浜市開港記念会館 他、神奈川県横浜市
Year and Date
2016-12-19
Related Report
Invited
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[Presentation] Creation of Single Photon Emitters in Silicon Carbide using Particle Beam Irradiation2016
Author(s)
T. Ohshima, T. Honda, S. Onoda, T. Makino, Y. Hijikata, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. Astakhov
Organizer
20th International Conference on Ion Beam Modification of Materials (IBMM2016)
Place of Presentation
Wellington, New Zealand
Year and Date
2016-10-30
Related Report
Int'l Joint Research / Invited
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[Presentation] Creation and Functionalization of Defects in SiC by Irradiation and Thermal Treatment2016
Author(s)
T. Ohshima, T. Honda, S. Onoda, T. Makino, Y. Hijikata, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. Astakhov
Organizer
11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
Place of Presentation
Halkidiki, Greece
Year and Date
2016-09-25
Related Report
Int'l Joint Research / Invited
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[Presentation] Vector Magnetic Field Sensing using Defect Spins in 4H-SiC2016
Author(s)
M. Niethammer, M. Widmann, S.-Y. Lee, P. Neumann, P. Stenberg, H. Pedersen, O. Kordina, T. Ohshima, N. T. Son, E. Janzen, J. Wrachtrup
Organizer
11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
Place of Presentation
Halkidiki, Greece
Year and Date
2016-09-25
Related Report
Int'l Joint Research
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[Presentation] Visible Range Photoluminescence from Single Photon Sources in 3C, 4H and 6H Silicon Carbide2016
Author(s)
A. Lohrmann, S. Castelletto, J. Klein, M. Bosi, M. Negri, D. W. M. Lau, B. C. Gibson, S. Prawer, J. C. McCallum, T. Ohshima, and B. C. Johnson
Organizer
International Conference on Nanoscience and Nanotechnology 2016
Place of Presentation
National Convention Center (Canberra, Australia)
Year and Date
2016-02-07
Related Report
Int'l Joint Research
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[Presentation] Single-Photon Emitting Diode in 4H- and 6H-SiC2015
Author(s)
A. Lohrmann, N. Iwamoto, Z. Bodrog, S. Castelletto, T. Ohshima, T. J. Karle, A.Gali3, S.Prawer, J.C. McCallum, and B.C. Johnson
Organizer
International Conference on Silicon Carbide and Related Materials 2015
Place of Presentation
Giardini Naxos (Sicily, Italy)
Year and Date
2015-10-04
Related Report
Int'l Joint Research
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[Presentation] Engineering Single Defects in Silicon Carbide Bulk, Nanostructures and Devices2015
Author(s)
S. Castelletto, A. Lohrmann, A.F.M. Almutairi, D.W.M. Lau, M. Negri, M. Bosi, B. C. Johnson, B.C. Gibson, J. C. McCallum, A. Gali, and T. Ohshima
Organizer
International Conference on Silicon Carbide and Related Materials 2015
Place of Presentation
Giardini Naxos (Sicily, Italy)
Year and Date
2015-10-04
Related Report
Int'l Joint Research / Invited
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[Presentation] Optically Active Defects in Silicon Carbide2014
Author(s)
B. C. Johnson, Alex Lohrmann, H. Bowers, J. C. McCallum and Takeshi Ohshima
Organizer
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014)
Place of Presentation
The University of Western Australia (Perth, Australia)
Year and Date
2014-12-14 – 2014-12-17
Related Report
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