Control of Photons and Spins of High-Brightness Single Photon Center in Silicon Carbide

• Project/Area Number: 26286047
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: National Institutes for Quantum and Radiological Science and Technology (2016); Japan Atomic Energy Agency (2014-2015)
• Principal Investigator: OHSHIMA Takeshi 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所 先端機能材料研究部, 上席研究員 (50354949)
• Co-Investigator(Kenkyū-buntansha): 藤ノ木 享英 (梅田享英 / 藤ノ木 享英(梅田享英)) 筑波大学, 数理物質科学研究科(系), 准教授 (10361354)
• Co-Investigator(Renkei-kenkyūsha): ONODA Shinobu 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所・先端機能材料研究部, 主幹研究員(定常) (30414569)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Project Status: Completed (Fiscal Year 2016)
• Budget Amount: ¥15,860,000 (Direct Cost: ¥12,200,000、Indirect Cost: ¥3,660,000); Fiscal Year 2016: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000); Fiscal Year 2015: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000); Fiscal Year 2014: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
• Keywords: 結晶工学 / 格子欠陥 / 半導体物性 / 光物性 / 放射線

Outline of Final Research Achievements

Exploration of single photon sources (SPSs) in silicon carbide (SiC) and creation of silicon vacancy (Vsi) which acts as SPS in SiC were investigated. High-brightness SPSs were found near the surface of SiC, and luminescence from the SPSs was stabilized by oxygen treatment above 550C, although the structure of the SPSs has not yet identified. Furthermore, it was found that the SPSs can be created in SiC devices such as pn diodes and metal-oxide-semiconductor field effect transistors (MOSFETs).
In addition, Vsi can be created at certain locations of SiC by proton beam writing (PBW) with accelerating energies of MeV range without any post-irradiation process such as annealing. Also, the creation yield of Vsi was estimated to be 10 % of irradiated proton fluences.

Research Products

• [Int'l Joint Research] University of Wurzburg/University of Stuttgart(Germany)
• [Int'l Joint Research] University of Melbourne/RMIT University(Australia)
• [Int'l Joint Research] Linkoping University(Sweden)
• [Int'l Joint Research] University of Chicago/Stanford University(米国)
• [Int'l Joint Research] University of Melbourne/RMIT University(Australia)
• [Journal Article] Locking of Electron Spin Coherence above 20 ms in Natural Silicon Carbide (2017)
  • Author(s): D. Simin, H. Kraus, A. Sperlich, T. Ohshima, G. V. Astakhov, V. Dyakonov
  • Journal Title: Phys. Rev. B Volume: 95
  • DOI: 10.1103/physrevb.95.161201
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Scalable Quantum Photonics with Single Color Centers in Silicon Carbide (2017)
  • Author(s): M. Radulaski, M. Widmann, M. Niethammer, J. L. Zhang, S.-Y. Lee, T. Rendler, K. G. Lagoudakis, N. T. Son, E. Janzeen, T. Ohshima, J. Wrachtrup, J. Vuckovic
  • Journal Title: Nano Letters Volume: 17 Pages: 1782-1786
  • DOI: 10.1021/acs.nanolett.6b05102
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Creation and Functionalization of Defects in SiC by Proton Beam Writing (2017)
  • Author(s): T. Ohshima, T. Honda, S. Onoda, T. Makino, M. Haruyama, T. Kamiya, T. Satoh, Y. Hijikata, W. Kada, O. Hanaizumi, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. V. Astakhov
  • Journal Title: Materials Science Forum Volume: 897 Pages: 233-237
  • DOI: 10.4028/www.scientific.net/msf.897.233
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide (2017)
  • Author(s): H. Kraus, D. Simin, C. Kasper, Y. Suda, S. Kawabata, W. Kada, T. Honda, Y. Hijikata, T. Ohshima, V. Dyakonov, G. V. Astakhov
  • Journal Title: Nano Letters Volume: - Pages: 2865-2870
  • DOI: 10.1021/acs.nanolett.6b05395
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Vector Magnetometry Using Silicon Vacancies in 4H-SiC Under Ambient Conditions (2016)
  • Author(s): M. Niethammer, M. Widmann, S.-Y. Lee, P. Stenberg, O. Kordina, T. Ohshima, N. T. Son, E. Janzen, J. Wrachtrup
  • Journal Title: Phys. Rev. Appl. Volume: 6 Pages: 034001-034001
  • DOI: 10.1103/physrevapplied.6.034001
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Activation and Control of Visible Single Defects in 4H-, 6H-, and 3C-SiC by Oxidation (2016)
  • Author(s): A. Lohrmann, S. Castelletto, J. R. Klein, T. Ohshima, M. Bosi, M. Negri, D. W. M. Lau, B. C. Gibson, S. Prawer, J. C. McCallum and B. C. Johnson
  • Journal Title: Applied Physics Letter Volume: 108
  • DOI: 10.1063/1.4939906
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Single-Photon Emitting Diode in Silicon Carbide (2015)
  • Author(s): A. Lohrmann, N. Iwamoto, Z. Bodrog, S. Castelletto, T. Ohshima, T. J. Karle, A. Gali, S. Prawer, J. C. McCallum and B. C. Johnson
  • Journal Title: Nature Communications Volume: 6
  • DOI: 10.1038/ncomms8783
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Isolated Electron Spins in Silicon Carbide with Millisecond Coherence Times (2015)
  • Author(s): David J. Christle, Abram L. Falk, Paolo Andrich, Paul V. Klimov, Jawad Ul Hassan, Nguyen T. Son, Erik Janzen, Takeshi Ohshima and David D. Awschalom
  • Journal Title: Nature Materials Volume: 14 Pages: 160-163
  • DOI: 10.1038/nmat4144
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Coherent Control of Single Spins in Silicon Carbide at Room Temperature (2015)
  • Author(s): MatthiasWidmann, Sang-Yun Lee, Torsten Rendler, Nguyen Tien Son, Helmut Fedder, Seoyoung Paik, Li-Ping Yang, Nan Zhao, Sen Yang, Ian Booker, Andrej Denisenko, Mohammad Jamali, S. Ali Momenzadeh, Ilja Gerhardt, Takeshi Ohshima, Adam Gali, Erik Janzen and Jorg Wrachtrup
  • Journal Title: Nature Materials Volume: 14 Pages: 165-168
  • DOI: 10.1038/nmat4145
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Presentation] 4H-SiC MOSFETチャネルの単一光子源の偏光角度依存性 (2017)
  • Author(s): 阿部裕太、岡本光央、小野田忍、大島武、春山盛善、加田渉、花泉修、小杉亮治、原田信介、梅田享英
  • Organizer: 2017年 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜、神奈川県横浜市
  • Year and Date: 2017-03-14
• [Presentation] SiC pinダイオード中の発光中心の観察 (2017)
  • Author(s): 常見 大貴、本多 智也、牧野 高紘、小野田 忍、佐藤 真一郎、土方 泰斗、大島 武
  • Organizer: 2017年 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜、神奈川県横浜市
  • Year and Date: 2017-03-14
• [Presentation] Creation of Single Photon Sources in Wide Bandgap Semiconductors by Ion Irradiation (2016)
  • Author(s): T. Ohshima, T. Honda, S. Onoda, T. Makino, Y. Hijikata, A. Lohrmann, J. R. Klein, B. C. Johnson3, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. Astakhov
  • Organizer: 第26回 日本MRS年次大会
  • Place of Presentation: 横浜市開港記念会館 他、神奈川県横浜市
  • Year and Date: 2016-12-19
  • Invited
• [Presentation] 次世代高機能デバイスを目指し原子のスピンと光を操る (2016)
  • Author(s): 大島 武
  • Organizer: 第6回CSJ化学フェスタ2016
  • Place of Presentation: タワーホール船堀、東京都江戸川区
  • Year and Date: 2016-11-14
• [Presentation] 4H-SiC MOSFETにおける単一発光欠陥の酸化膜界面依存性の共焦点顕微鏡評価 (2016)
  • Author(s): 阿部裕太、岡本光央、小杉亮治、原田信介、波多野睦子、岩崎孝之、小野田忍、春山盛善、加田渉、花泉修、大島武、梅田享英
  • Organizer: 応用物理学会先進パワー半導体分科会第3回講演会
  • Place of Presentation: つくば国際会議場、茨城県つくば市
  • Year and Date: 2016-11-08
• [Presentation] プロトンビームライティングによるSiC中へのシリコン空孔の形成 (2016)
  • Author(s): 本多 智也、Kraus Hannes、加田 渉、小野田 忍、春山 盛善、佐藤 隆博、江夏 昌志、神谷 富裕、川端 駿介、三浦 健太、花泉 修、土方 泰斗、大島 武
  • Organizer: 応用物理学会先進パワー半導体分科会第3回講演会
  • Place of Presentation: つくば国際会議場、茨城県つくば市
  • Year and Date: 2016-11-08
• [Presentation] Creation of Single Photon Emitters in Silicon Carbide using Particle Beam Irradiation (2016)
  • Author(s): T. Ohshima, T. Honda, S. Onoda, T. Makino, Y. Hijikata, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. Astakhov
  • Organizer: 20th International Conference on Ion Beam Modification of Materials (IBMM2016)
  • Place of Presentation: Wellington, New Zealand
  • Year and Date: 2016-10-30
  • Int'l Joint Research / Invited
• [Presentation] Creation and Functionalization of Defects in SiC by Irradiation and Thermal Treatment (2016)
  • Author(s): T. Ohshima, T. Honda, S. Onoda, T. Makino, Y. Hijikata, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. Astakhov
  • Organizer: 11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
  • Place of Presentation: Halkidiki, Greece
  • Year and Date: 2016-09-25
  • Int'l Joint Research / Invited
• [Presentation] Excitation Properties of the Divacancy in 4H and 3C SiC (2016)
  • Author(s): I. G. Ivanov, N. T. Son, T. Ohshima, E. Janzen
  • Organizer: 11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
  • Place of Presentation: Halkidiki, Greece
  • Year and Date: 2016-09-25
  • Int'l Joint Research
• [Presentation] Coherence Properties of the Silicon Vacancy in SiC: from Ensemble to Single Defects (2016)
  • Author(s): D.Simin, H. Kraus, A. Sperlich, M. Trupke, T. Ohshima, G. V. Astakhov, V. Dyakonov
  • Organizer: 11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
  • Place of Presentation: Halkidiki, Greece
  • Year and Date: 2016-09-25
  • Int'l Joint Research
• [Presentation] Vector Magnetic Field Sensing using Defect Spins in 4H-SiC (2016)
  • Author(s): M. Niethammer, M. Widmann, S.-Y. Lee, P. Neumann, P. Stenberg, H. Pedersen, O. Kordina, T. Ohshima, N. T. Son, E. Janzen, J. Wrachtrup
  • Organizer: 11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
  • Place of Presentation: Halkidiki, Greece
  • Year and Date: 2016-09-25
  • Int'l Joint Research
• [Presentation] Charge State Switching of Single Silicon Vacancies in SiC (2016)
  • Author(s): M. Widmann, M. Niethammer, S.-Y. Lee, I. Booker, T. Ohshima, A. Gali, N. T. Son, E. Janzen, J. Wrachtrup
  • Organizer: 11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
  • Place of Presentation: Halkidiki, Greece
  • Year and Date: 2016-09-25
  • Int'l Joint Research
• [Presentation] 4H-SiC MOSFETにおける単一発光欠陥の界面酸化プロセス依存性の共焦点顕微鏡評価 (2016)
  • Author(s): 阿部裕太、梅田享英、岡本光央、小杉亮治、原田信介、波多野睦子、岩崎孝之、小野田忍、大島武、春山盛善、加田渉、花泉修
  • Organizer: 2016年 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ、新潟県新潟市
  • Year and Date: 2016-09-13
• [Presentation] 3C-SiC中の表面に形成される単一発光源の発光特性と表面処理の関係 (2016)
  • Author(s): 本多 智也、小野田 忍、土方 泰斗、大島 武
  • Organizer: 2016年 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ、新潟県新潟市
  • Year and Date: 2016-09-13
• [Presentation] 4H-SiC MOSFET中の単一表面欠陥の共焦点顕微鏡観察 (2016)
  • Author(s): 梅田享英，阿部裕太，Y.-W. Zhu，岡本光央，小杉亮治，原田信介，春山盛善，牧野高紘，小野田忍，大島武
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学（東京都目黒区）
  • Year and Date: 2016-03-19
• [Presentation] Visible Range Photoluminescence from Single Photon Sources in 3C, 4H and 6H Silicon Carbide (2016)
  • Author(s): A. Lohrmann, S. Castelletto, J. Klein, M. Bosi, M. Negri, D. W. M. Lau, B. C. Gibson, S. Prawer, J. C. McCallum, T. Ohshima, and B. C. Johnson
  • Organizer: International Conference on Nanoscience and Nanotechnology 2016
  • Place of Presentation: National Convention Center (Canberra, Australia)
  • Year and Date: 2016-02-07
  • Int'l Joint Research
• [Presentation] 高温熱処理したSiC中に存在する単一光子源 (2015)
  • Author(s): 大島 武，A. Lohrmann，B. C. Johnson，S. Castelletto，小野田忍，牧野高紘，武山昭憲，J. Klein，M. Bosi，M. Negri，D. W. M. Lau，B. C. Gibson，S. Prawer，J. C. McCallum
  • Organizer: 応用物理学会先進パワー半導体分科会講演会第2回講演会
  • Place of Presentation: 大阪国際交流センター（大阪府大阪市）
  • Year and Date: 2015-10-09
• [Presentation] ESR study on Hydrogen Passivation of Intrinsic Defects in P-type and Semi-insulating 4H-SiC (2015)
  • Author(s): K. Murakami, S. Tanai, T. Okuda, J. Suda, T. Kimoto, and T. Umeda
  • Organizer: International Conference on Silicon Carbide and Related Materials 2015
  • Place of Presentation: Giardini Naxos (Sicily, Italy)
  • Year and Date: 2015-10-04
  • Int'l Joint Research
• [Presentation] Single-Photon Emitting Diode in 4H- and 6H-SiC (2015)
  • Author(s): A. Lohrmann, N. Iwamoto, Z. Bodrog, S. Castelletto, T. Ohshima, T. J. Karle, A.Gali3, S.Prawer, J.C. McCallum, and B.C. Johnson
  • Organizer: International Conference on Silicon Carbide and Related Materials 2015
  • Place of Presentation: Giardini Naxos (Sicily, Italy)
  • Year and Date: 2015-10-04
  • Int'l Joint Research
• [Presentation] Engineering Single Defects in Silicon Carbide Bulk, Nanostructures and Devices (2015)
  • Author(s): S. Castelletto, A. Lohrmann, A.F.M. Almutairi, D.W.M. Lau, M. Negri, M. Bosi, B. C. Johnson, B.C. Gibson, J. C. McCallum, A. Gali, and T. Ohshima
  • Organizer: International Conference on Silicon Carbide and Related Materials 2015
  • Place of Presentation: Giardini Naxos (Sicily, Italy)
  • Year and Date: 2015-10-04
  • Int'l Joint Research / Invited
• [Presentation] Optically Active Defects in Silicon Carbide (2014)
  • Author(s): B. C. Johnson, Alex Lohrmann, H. Bowers, J. C. McCallum and Takeshi Ohshima
  • Organizer: Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014)
  • Place of Presentation: The University of Western Australia (Perth, Australia)
  • Year and Date: 2014-12-14 – 2014-12-17
• [Presentation] SiC中の単一発光源となる欠陥の探索 (2014)
  • Author(s): 大島 武，小野田忍，牧野高紘，岩本直也，B. C. Johnson，A. Lohrmann，T. Karle，J. C. McCallum，S. Castelletto，梅田享英，佐藤嘉洋，朱煜偉，V. Ivády，A. Gali，春山盛善，加田渉，花泉修
  • Organizer: 2014年 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学札幌キャンパス（北海道・札幌市）
  • Year and Date: 2014-09-17 – 2014-09-20
• [Remarks] プロジェクト「半導体照射効果研究」
  • URL: http://www.taka.qst.go.jp/eimr_div/RadEffects/index_j.html
• [Remarks] SiC中の炭素アンチサイト-炭素空孔センターの発光特性評価【新単一発光源の探索】
  • URL: http://www.taka.jaea.go.jp/eimr_div/RadEffects/Defect_eng_j.html