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Control of Photons and Spins of High-Brightness Single Photon Center in Silicon Carbide

Research Project

Project/Area Number 26286047
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypePartial Multi-year Fund
Section一般
Research Field Crystal engineering
Research InstitutionNational Institutes for Quantum and Radiological Science and Technology (2016)
Japan Atomic Energy Agency (2014-2015)

Principal Investigator

OHSHIMA Takeshi  国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所 先端機能材料研究部, 上席研究員 (50354949)

Co-Investigator(Kenkyū-buntansha) 藤ノ木 享英 (梅田享英 / 藤ノ木 享英(梅田享英))  筑波大学, 数理物質科学研究科(系), 准教授 (10361354)
Co-Investigator(Renkei-kenkyūsha) ONODA Shinobu  国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所・先端機能材料研究部, 主幹研究員(定常) (30414569)
Project Period (FY) 2014-04-01 – 2017-03-31
Project Status Completed (Fiscal Year 2016)
Budget Amount *help
¥15,860,000 (Direct Cost: ¥12,200,000、Indirect Cost: ¥3,660,000)
Fiscal Year 2016: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2015: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000)
Fiscal Year 2014: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
Keywords結晶工学 / 格子欠陥 / 半導体物性 / 光物性 / 放射線
Outline of Final Research Achievements

Exploration of single photon sources (SPSs) in silicon carbide (SiC) and creation of silicon vacancy (Vsi) which acts as SPS in SiC were investigated. High-brightness SPSs were found near the surface of SiC, and luminescence from the SPSs was stabilized by oxygen treatment above 550C, although the structure of the SPSs has not yet identified. Furthermore, it was found that the SPSs can be created in SiC devices such as pn diodes and metal-oxide-semiconductor field effect transistors (MOSFETs).
In addition, Vsi can be created at certain locations of SiC by proton beam writing (PBW) with accelerating energies of MeV range without any post-irradiation process such as annealing. Also, the creation yield of Vsi was estimated to be 10 % of irradiated proton fluences.

Report

(4 results)
  • 2016 Annual Research Report   Final Research Report ( PDF )
  • 2015 Annual Research Report
  • 2014 Annual Research Report
  • Research Products

    (38 results)

All 2017 2016 2015 2014 Other

All Int'l Joint Research (5 results) Journal Article (9 results) (of which Int'l Joint Research: 7 results,  Peer Reviewed: 9 results,  Acknowledgement Compliant: 9 results,  Open Access: 2 results) Presentation (22 results) (of which Int'l Joint Research: 10 results,  Invited: 4 results) Remarks (2 results)

  • [Int'l Joint Research] University of Wurzburg/University of Stuttgart(Germany)

    • Related Report
      2016 Annual Research Report
  • [Int'l Joint Research] University of Melbourne/RMIT University(Australia)

    • Related Report
      2016 Annual Research Report
  • [Int'l Joint Research] Linkoping University(Sweden)

    • Related Report
      2016 Annual Research Report
  • [Int'l Joint Research] University of Chicago/Stanford University(米国)

    • Related Report
      2016 Annual Research Report
  • [Int'l Joint Research] University of Melbourne/RMIT University(Australia)

    • Related Report
      2015 Annual Research Report
  • [Journal Article] Locking of Electron Spin Coherence above 20 ms in Natural Silicon Carbide2017

    • Author(s)
      D. Simin, H. Kraus, A. Sperlich, T. Ohshima, G. V. Astakhov, V. Dyakonov
    • Journal Title

      Phys. Rev. B

      Volume: 95 Issue: 16

    • DOI

      10.1103/physrevb.95.161201

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Scalable Quantum Photonics with Single Color Centers in Silicon Carbide2017

    • Author(s)
      M. Radulaski, M. Widmann, M. Niethammer, J. L. Zhang, S.-Y. Lee, T. Rendler, K. G. Lagoudakis, N. T. Son, E. Janzeen, T. Ohshima, J. Wrachtrup, J. Vuckovic
    • Journal Title

      Nano Letters

      Volume: 17 Issue: 3 Pages: 1782-1786

    • DOI

      10.1021/acs.nanolett.6b05102

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Creation and Functionalization of Defects in SiC by Proton Beam Writing2017

    • Author(s)
      T. Ohshima, T. Honda, S. Onoda, T. Makino, M. Haruyama, T. Kamiya, T. Satoh, Y. Hijikata, W. Kada, O. Hanaizumi, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. V. Astakhov
    • Journal Title

      Mater. Sci. Forum

      Volume: 897 Pages: 233-237

    • DOI

      10.4028/www.scientific.net/msf.897.233

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide2017

    • Author(s)
      H. Kraus, D. Simin, C. Kasper, Y. Suda, S. Kawabata, W. Kada, T. Honda, Y. Hijikata, T. Ohshima, V. Dyakonov, G. V. Astakhov
    • Journal Title

      Nano Letters

      Volume: - Issue: 5 Pages: 2865-2870

    • DOI

      10.1021/acs.nanolett.6b05395

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Vector Magnetometry Using Silicon Vacancies in 4H-SiC Under Ambient Conditions2016

    • Author(s)
      M. Niethammer, M. Widmann, S.-Y. Lee, P. Stenberg, O. Kordina, T. Ohshima, N. T. Son, E. Janzen, J. Wrachtrup
    • Journal Title

      Phys. Rev. Appl.

      Volume: 6 Issue: 3 Pages: 034001-034001

    • DOI

      10.1103/physrevapplied.6.034001

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Activation and Control of Visible Single Defects in 4H-, 6H-, and 3C-SiC by Oxidation2016

    • Author(s)
      A. Lohrmann, S. Castelletto, J. R. Klein, T. Ohshima, M. Bosi, M. Negri, D. W. M. Lau, B. C. Gibson, S. Prawer, J. C. McCallum and B. C. Johnson
    • Journal Title

      Applied Physics Letter

      Volume: 108 Issue: 2

    • DOI

      10.1063/1.4939906

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Single-Photon Emitting Diode in Silicon Carbide2015

    • Author(s)
      A. Lohrmann, N. Iwamoto, Z. Bodrog, S. Castelletto, T. Ohshima, T. J. Karle, A. Gali, S. Prawer, J. C. McCallum and B. C. Johnson
    • Journal Title

      Nature Communications

      Volume: 6 Issue: 1

    • DOI

      10.1038/ncomms8783

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Isolated Electron Spins in Silicon Carbide with Millisecond Coherence Times2015

    • Author(s)
      David J. Christle, Abram L. Falk, Paolo Andrich, Paul V. Klimov, Jawad Ul Hassan, Nguyen T. Son, Erik Janzen, Takeshi Ohshima and David D. Awschalom
    • Journal Title

      Nature Materials

      Volume: 14 Issue: 2 Pages: 160-163

    • DOI

      10.1038/nmat4144

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] Coherent Control of Single Spins in Silicon Carbide at Room Temperature2015

    • Author(s)
      MatthiasWidmann, Sang-Yun Lee, Torsten Rendler, Nguyen Tien Son, Helmut Fedder, Seoyoung Paik, Li-Ping Yang, Nan Zhao, Sen Yang, Ian Booker, Andrej Denisenko, Mohammad Jamali, S. Ali Momenzadeh, Ilja Gerhardt, Takeshi Ohshima, Adam Gali, Erik Janzen and Jorg Wrachtrup
    • Journal Title

      Nature Materials

      Volume: 14 Issue: 2 Pages: 165-168

    • DOI

      10.1038/nmat4145

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Presentation] 4H-SiC MOSFETチャネルの単一光子源の偏光角度依存性2017

    • Author(s)
      阿部裕太、岡本光央、小野田忍、大島武、春山盛善、加田渉、花泉修、小杉亮治、原田信介、梅田享英
    • Organizer
      2017年 第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜、神奈川県横浜市
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] SiC pinダイオード中の発光中心の観察2017

    • Author(s)
      常見 大貴、本多 智也、牧野 高紘、小野田 忍、佐藤 真一郎、土方 泰斗、大島 武
    • Organizer
      2017年 第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜、神奈川県横浜市
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] Creation of Single Photon Sources in Wide Bandgap Semiconductors by Ion Irradiation2016

    • Author(s)
      T. Ohshima, T. Honda, S. Onoda, T. Makino, Y. Hijikata, A. Lohrmann, J. R. Klein, B. C. Johnson3, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. Astakhov
    • Organizer
      第26回 日本MRS年次大会
    • Place of Presentation
      横浜市開港記念会館 他、神奈川県横浜市
    • Year and Date
      2016-12-19
    • Related Report
      2016 Annual Research Report
    • Invited
  • [Presentation] 次世代高機能デバイスを目指し原子のスピンと光を操る2016

    • Author(s)
      大島 武
    • Organizer
      第6回CSJ化学フェスタ2016
    • Place of Presentation
      タワーホール船堀、東京都江戸川区
    • Year and Date
      2016-11-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] 4H-SiC MOSFETにおける単一発光欠陥の酸化膜界面依存性の共焦点顕微鏡評価2016

    • Author(s)
      阿部裕太、岡本光央、小杉亮治、原田信介、波多野睦子、岩崎孝之、小野田忍、春山盛善、加田渉、花泉修、大島武、梅田享英
    • Organizer
      応用物理学会先進パワー半導体分科会第3回講演会
    • Place of Presentation
      つくば国際会議場、茨城県つくば市
    • Year and Date
      2016-11-08
    • Related Report
      2016 Annual Research Report
  • [Presentation] プロトンビームライティングによるSiC中へのシリコン空孔の形成2016

    • Author(s)
      本多 智也、Kraus Hannes、加田 渉、小野田 忍、春山 盛善、佐藤 隆博、江夏 昌志、神谷 富裕、川端 駿介、三浦 健太、花泉 修、土方 泰斗、大島 武
    • Organizer
      応用物理学会先進パワー半導体分科会第3回講演会
    • Place of Presentation
      つくば国際会議場、茨城県つくば市
    • Year and Date
      2016-11-08
    • Related Report
      2016 Annual Research Report
  • [Presentation] Creation of Single Photon Emitters in Silicon Carbide using Particle Beam Irradiation2016

    • Author(s)
      T. Ohshima, T. Honda, S. Onoda, T. Makino, Y. Hijikata, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. Astakhov
    • Organizer
      20th International Conference on Ion Beam Modification of Materials (IBMM2016)
    • Place of Presentation
      Wellington, New Zealand
    • Year and Date
      2016-10-30
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Creation and Functionalization of Defects in SiC by Irradiation and Thermal Treatment2016

    • Author(s)
      T. Ohshima, T. Honda, S. Onoda, T. Makino, Y. Hijikata, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. Astakhov
    • Organizer
      11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
    • Place of Presentation
      Halkidiki, Greece
    • Year and Date
      2016-09-25
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Excitation Properties of the Divacancy in 4H and 3C SiC2016

    • Author(s)
      I. G. Ivanov, N. T. Son, T. Ohshima, E. Janzen
    • Organizer
      11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
    • Place of Presentation
      Halkidiki, Greece
    • Year and Date
      2016-09-25
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Coherence Properties of the Silicon Vacancy in SiC: from Ensemble to Single Defects2016

    • Author(s)
      D.Simin, H. Kraus, A. Sperlich, M. Trupke, T. Ohshima, G. V. Astakhov, V. Dyakonov
    • Organizer
      11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
    • Place of Presentation
      Halkidiki, Greece
    • Year and Date
      2016-09-25
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Vector Magnetic Field Sensing using Defect Spins in 4H-SiC2016

    • Author(s)
      M. Niethammer, M. Widmann, S.-Y. Lee, P. Neumann, P. Stenberg, H. Pedersen, O. Kordina, T. Ohshima, N. T. Son, E. Janzen, J. Wrachtrup
    • Organizer
      11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
    • Place of Presentation
      Halkidiki, Greece
    • Year and Date
      2016-09-25
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Charge State Switching of Single Silicon Vacancies in SiC2016

    • Author(s)
      M. Widmann, M. Niethammer, S.-Y. Lee, I. Booker, T. Ohshima, A. Gali, N. T. Son, E. Janzen, J. Wrachtrup
    • Organizer
      11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
    • Place of Presentation
      Halkidiki, Greece
    • Year and Date
      2016-09-25
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 4H-SiC MOSFETにおける単一発光欠陥の界面酸化プロセス依存性の共焦点顕微鏡評価2016

    • Author(s)
      阿部裕太、梅田享英、岡本光央、小杉亮治、原田信介、波多野睦子、岩崎孝之、小野田忍、大島武、春山盛善、加田渉、花泉修
    • Organizer
      2016年 第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ、新潟県新潟市
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
  • [Presentation] 3C-SiC中の表面に形成される単一発光源の発光特性と表面処理の関係2016

    • Author(s)
      本多 智也、小野田 忍、土方 泰斗、大島 武
    • Organizer
      2016年 第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ、新潟県新潟市
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
  • [Presentation] 4H-SiC MOSFET中の単一表面欠陥の共焦点顕微鏡観察2016

    • Author(s)
      梅田享英,阿部裕太,Y.-W. Zhu,岡本光央,小杉亮治,原田信介,春山盛善,牧野高紘,小野田忍,大島武
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学(東京都目黒区)
    • Year and Date
      2016-03-19
    • Related Report
      2015 Annual Research Report
  • [Presentation] Visible Range Photoluminescence from Single Photon Sources in 3C, 4H and 6H Silicon Carbide2016

    • Author(s)
      A. Lohrmann, S. Castelletto, J. Klein, M. Bosi, M. Negri, D. W. M. Lau, B. C. Gibson, S. Prawer, J. C. McCallum, T. Ohshima, and B. C. Johnson
    • Organizer
      International Conference on Nanoscience and Nanotechnology 2016
    • Place of Presentation
      National Convention Center (Canberra, Australia)
    • Year and Date
      2016-02-07
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 高温熱処理したSiC中に存在する単一光子源2015

    • Author(s)
      大島 武,A. Lohrmann,B. C. Johnson,S. Castelletto,小野田忍,牧野高紘,武山昭憲,J. Klein,M. Bosi,M. Negri,D. W. M. Lau,B. C. Gibson,S. Prawer,J. C. McCallum
    • Organizer
      応用物理学会先進パワー半導体分科会講演会第2回講演会
    • Place of Presentation
      大阪国際交流センター(大阪府大阪市)
    • Year and Date
      2015-10-09
    • Related Report
      2015 Annual Research Report
  • [Presentation] ESR study on Hydrogen Passivation of Intrinsic Defects in P-type and Semi-insulating 4H-SiC2015

    • Author(s)
      K. Murakami, S. Tanai, T. Okuda, J. Suda, T. Kimoto, and T. Umeda
    • Organizer
      International Conference on Silicon Carbide and Related Materials 2015
    • Place of Presentation
      Giardini Naxos (Sicily, Italy)
    • Year and Date
      2015-10-04
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Single-Photon Emitting Diode in 4H- and 6H-SiC2015

    • Author(s)
      A. Lohrmann, N. Iwamoto, Z. Bodrog, S. Castelletto, T. Ohshima, T. J. Karle, A.Gali3, S.Prawer, J.C. McCallum, and B.C. Johnson
    • Organizer
      International Conference on Silicon Carbide and Related Materials 2015
    • Place of Presentation
      Giardini Naxos (Sicily, Italy)
    • Year and Date
      2015-10-04
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Engineering Single Defects in Silicon Carbide Bulk, Nanostructures and Devices2015

    • Author(s)
      S. Castelletto, A. Lohrmann, A.F.M. Almutairi, D.W.M. Lau, M. Negri, M. Bosi, B. C. Johnson, B.C. Gibson, J. C. McCallum, A. Gali, and T. Ohshima
    • Organizer
      International Conference on Silicon Carbide and Related Materials 2015
    • Place of Presentation
      Giardini Naxos (Sicily, Italy)
    • Year and Date
      2015-10-04
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Optically Active Defects in Silicon Carbide2014

    • Author(s)
      B. C. Johnson, Alex Lohrmann, H. Bowers, J. C. McCallum and Takeshi Ohshima
    • Organizer
      Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014)
    • Place of Presentation
      The University of Western Australia (Perth, Australia)
    • Year and Date
      2014-12-14 – 2014-12-17
    • Related Report
      2014 Annual Research Report
  • [Presentation] SiC中の単一発光源となる欠陥の探索2014

    • Author(s)
      大島 武,小野田忍,牧野高紘,岩本直也,B. C. Johnson,A. Lohrmann,T. Karle,J. C. McCallum,S. Castelletto,梅田享英,佐藤嘉洋,朱煜偉,V. Ivády,A. Gali,春山盛善,加田渉,花泉修
    • Organizer
      2014年 第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス(北海道・札幌市)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Remarks] プロジェクト「半導体照射効果研究」

    • URL

      http://www.taka.qst.go.jp/eimr_div/RadEffects/index_j.html

    • Related Report
      2016 Annual Research Report 2015 Annual Research Report
  • [Remarks] SiC中の炭素アンチサイト-炭素空孔センターの発光特性評価【新単一発光源の探索】

    • URL

      http://www.taka.jaea.go.jp/eimr_div/RadEffects/Defect_eng_j.html

    • Related Report
      2014 Annual Research Report

URL: 

Published: 2014-04-04   Modified: 2022-02-16  

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