Study on ferroelectric resistive switching in ferroelectric tunnel junctions and ferroelectric diodes
Project/Area Number |
26286055
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Partial Multi-year Fund |
Section | 一般 |
Research Field |
Thin film/Surface and interfacial physical properties
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Research Institution | National Institute of Advanced Industrial Science and Technology |
Principal Investigator |
Sawa Akihito 国立研究開発法人産業技術総合研究所, 電子光技術研究部門, 副研究部門長 (10357171)
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Co-Investigator(Renkei-kenkyūsha) |
YAMADA Hiroyuki 国立研究開発法人産業技術総合研究所, 電子光技術研究部門, 主任研究員 (00415762)
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Project Period (FY) |
2014-04-01 – 2017-03-31
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Project Status |
Completed (Fiscal Year 2016)
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Budget Amount *help |
¥15,730,000 (Direct Cost: ¥12,100,000、Indirect Cost: ¥3,630,000)
Fiscal Year 2016: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2015: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2014: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000)
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Keywords | 表面・界面物性 / 電子・電気材料 / 酸化物エレクトロニクス / 強相関エレクトロニクス |
Outline of Final Research Achievements |
From the I-V characteristics and cell-area dependence of the resistive switching properties in Co/BaTiO3/(La,Sr)MnO3 (Co/BTO/LSMO) ferroelectric tunnel junctions (FTJs), we found that the thermionic emission is the dominant transport process in the FTJs and the resistive switching occurs over the entire interface. We also found that the surface termination of the ferroelectric barrier BTO in contact with a metal electrode critically affects the resistive switching properties. These results are explained in terms of the termination dependence of the depolarization field, i.e., the asymmetric potential distribution in FTJ, that is generated by a dead layer and imperfect charge screening at the interfaces.
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Report
(5 results)
Research Products
(21 results)
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[Presentation] 界面抵抗変化型不揮発性メモリ2014
Author(s)
澤彰仁, 福地 厚, Liang Liu, 浅沼周太郎, 山田浩之
Organizer
応用物理学会応用電子物性分科会研究例会「次世代不揮発性メモリの最前線」
Place of Presentation
首都大学東京秋葉原サテライトキャンパス(東京)
Year and Date
2014-10-21
Related Report
Invited
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