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Development of amorphous carbon semiconductor with selective optical gap and its application to electronic devices for photon to electron conversion

Research Project

Project/Area Number 26289089
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypePartial Multi-year Fund
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionYamaguchi University

Principal Investigator

Honda Kensuke  山口大学, 創成科学研究科, 教授 (60334314)

Project Period (FY) 2014-04-01 – 2017-03-31
Project Status Completed (Fiscal Year 2016)
Budget Amount *help
¥16,640,000 (Direct Cost: ¥12,800,000、Indirect Cost: ¥3,840,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2015: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2014: ¥12,220,000 (Direct Cost: ¥9,400,000、Indirect Cost: ¥2,820,000)
Keywordsアモルファスカーボン / 可変バンドギャップ / 半導体材料 / 太陽電池 / プラズマCVD / 電気・電子材料 / 可変バンドギャップ半導体
Outline of Final Research Achievements

In recent years, it is urgent to develop novel semiconductor materials such as wide band-gap semiconductor (such as SiC, GaN and diamond) or semiconductor materials with selective band gap. Amorphous carbon (a-C, diamond like carbon) is expected to be novel wide gap semiconductor material because it shows higher optical gap of 4.0 eV and higher carrier mobility comparable to GaN. In this study, semiconductor materials with selective optical gap and higher semiconductor properties were tried to be realized by introducing foreign atoms in a-C. High performance n-type Si-added a-C semiconductor with optical gap ranging from 1.2 to 2.7 eV and p-type Si-added a-C with optical gaps ranging from 1.8 to 2.5 eV could be successfully synthesized by using an anode-coupling type r. f. plasma CVD method with higher r. f. frequency. Hetero-pn junctions of these n- and p-type amorphous semiconductor and single crystal Si were confirmed to be functioned as a photovoltaic cell.

Report

(4 results)
  • 2016 Annual Research Report   Final Research Report ( PDF )
  • 2015 Annual Research Report
  • 2014 Annual Research Report

Research Products

(20 results)

All 2017 2016 2015 2014

All Journal Article (4 results) (of which Peer Reviewed: 4 results) Presentation (15 results) (of which Int'l Joint Research: 4 results,  Invited: 1 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Development of Silicon and Carbon Based p-Type Amorphous Semiconductor Films with Optical Gap Variable for High-efficiency Multi-junction Solar Cells2016

    • Author(s)
      Hiroshi Naragino, Yoshiya Nagata, Keigo Okafuji, Shinpei Ohtomo, Yuta Shimizu, and Kensuke Honda
    • Journal Title

      ECS transactions

      Volume: Vol. 75 (No. 13) Pages: 153-159

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Development of high-sensitive detection system for redox analytes having a standard potential higher than O2 evolution by using micropatterned conductive boron-doped DLC electrodes2016

    • Author(s)
      Shinpei Ohtomo, Hiroshi Naragino, Keigo Okafuji, Ryutaro Kobayashi, Kensuke Honda
    • Journal Title

      ECS transactions

      Volume: Vol. 75 (No. 17) Pages: 217-228

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Amorphous Carbon-Based Semiconductor Capable of Controlling Its Optical Gap and Conductivity by Incorporating Silicon and Nitrogen Atoms2016

    • Author(s)
      Kensuke Honda, Kohsuke Yoshinaga and Yoshiya Nagata
    • Journal Title

      ECS J. Solid State Sci. Technol.

      Volume: 5 Pages: 590-597

    • DOI

      10.1149/2.0131610jss

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Control of electric conductivity and electrochemical activity of hydrogenated amorphous carbon by incorporating boron atoms2014

    • Author(s)
      Kensuke Honda, Hiroshi Naragino, and Yohsuke Shimai
    • Journal Title

      J. Electrochem. Soc.

      Volume: 161

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Presentation] ワイドギャップシリコン添加アモルファスカーボン半導体を用いた太陽電池の創製及び出力特性と化学結合状態の相関の解明2017

    • Author(s)
      清水 優太, 楢木野 宏, 本多 謙介
    • Organizer
      第64回応用物理春季学術講演会
    • Place of Presentation
      神奈川県横浜市パシフィコ横浜
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] 超微細くし形ホウ素ドープDLC電極による酸素発生電位を超える標準電極電位を持つ酸化還元種の高感度検出2017

    • Author(s)
      大友 慎平, 楢木野 宏, 岡藤 圭吾, 本多 謙介
    • Organizer
      第64回応用物理春季学術講演会
    • Place of Presentation
      神奈川県横浜市パシフィコ横浜
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] Development of Silicon and Carbon Based p-Type Amorphous Semiconductor Films with Optical Gap Variable for High-Efficiency Multi-Junction Solar Cells2016

    • Author(s)
      H. Naragino, Y. Nagata, K. Okafuji, S. Ohtomo, Y. Shimizu, and K. Honda
    • Organizer
      Pasific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2016)/230th ECS Meeting
    • Place of Presentation
      Honolulu, Hawaii, USA
    • Year and Date
      2016-10-02
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Development of High-Sensitive Detection System for Redox Analytes Having a Standard Potential Higher Than O2 Evolution By Using Micropatterned Conductive Boron-Doped DLC Electrodes2016

    • Author(s)
      Shinpei Ohtomo, Hiroshi Naragino, Keigo Okafuji, Ryutaro Kobayashi, and Kensuke Honda
    • Organizer
      Pasific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2016)/230th ECS Meeting
    • Place of Presentation
      Honolulu, Hawaii, USA
    • Year and Date
      2016-10-02
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 導電性DLCのくし形電極化によるO2発生を超える酸化還元電位をもつレドックス種の高感度検出2016

    • Author(s)
      大友 慎平・島井 庸佑・渡辺 紘太朗・本多 謙介
    • Organizer
      日本化学会第96春季年会 2016年
    • Place of Presentation
      京都府京田辺市 同志社大学京田辺キャンパス
    • Year and Date
      2016-03-24
    • Related Report
      2015 Annual Research Report
  • [Presentation] プラズマ化学蒸着(CVD)法を用いたナローギャップアモルファスカーボン(a-C)半導体の創製2016

    • Author(s)
      林 紘平・山田 昌央・永田 祥弥・小林 龍太朗・本多 謙介
    • Organizer
      日本化学会第96春季年会 2016年
    • Place of Presentation
      京都府京田辺市 同志社大学京田辺キャンパス
    • Year and Date
      2016-03-24
    • Related Report
      2015 Annual Research Report
  • [Presentation] プラズマ表面処理による骨髄細胞(BMC)の付着性の高い界面の創製2016

    • Author(s)
      渡辺 紘太朗・本多 謙介・島井 庸佑
    • Organizer
      日本化学会第96春季年会 2016年
    • Place of Presentation
      京都府京田辺市 同志社大学京田辺キャンパス
    • Year and Date
      2016-03-24
    • Related Report
      2015 Annual Research Report
  • [Presentation] Clarification of Si added a-C characters that contribute high efficiency solar cell and improvement of its semiconductor properties2015

    • Author(s)
      Yoshiya Nagata, Masahiro Yamada, Ryutaro Kobayashi, Kensuke Honda
    • Organizer
      Pacifichem 2015
    • Place of Presentation
      アメリカ・ハワイ市 ハワイコンベンションセンター
    • Year and Date
      2015-12-15
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Response change at interdigitated array microelectrodes consist of boron-doped amorphous carbon by varying geometry for high sensitive detection of redox analytes2015

    • Author(s)
      Kensuke Honda, Shinpei Ohtomo, Yoshiya Nagata, Masahiro Yamada, Ryutaro Kobayashi
    • Organizer
      Pacifichem 2015
    • Place of Presentation
      アメリカ・ハワイ市 ハワイコンベンションセンター
    • Year and Date
      2015-12-15
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Amorphous Carbon Semiconductor Capable of Controlling Its Optical Gap and Conductivity by Incorporating Two Types of Foreign Atoms2015

    • Author(s)
      Kensuke Honda, Yoshiya Nagata, Masahiro Yamada, Yohsuke Shimai
    • Organizer
      ISPlasma2015/IC-PLANTS2015
    • Place of Presentation
      Nagoya University, Nagoya, Japan
    • Year and Date
      2015-03-30
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Fabrication of Wide Gap Si Added a-C Semiconductor with p-Type Conduction by PlasmaEnhanced Chemical Vapor Deposition2015

    • Author(s)
      Yoshiya Nagata, Yohsuke Shimai, Masahiro Yamada, Kensuke Honda
    • Organizer
      ISPlasma2015/IC-PLANTS2015
    • Place of Presentation
      Nagoya University, Nagoya, Japan
    • Year and Date
      2015-03-30
    • Related Report
      2014 Annual Research Report
  • [Presentation] The Synthesis of Carbon-Based Material with High Reactivity toward Oxygen Reduction2015

    • Author(s)
      Yohsuke Shimai, Yoshiya Nagata, Masahiro Yamada, Kensuke Honda
    • Organizer
      ISPlasma2015/IC-PLANTS2015
    • Place of Presentation
      Nagoya University, Nagoya, Japan
    • Year and Date
      2015-03-30
    • Related Report
      2014 Annual Research Report
  • [Presentation] The Fabrication of Amorphous Wide Gap Semiconductor by Introducing Hetero Atoms2015

    • Author(s)
      Masahiro Yamada, Yohsuke Shimai, Yoshiya Nagata, Kensuke Honda
    • Organizer
      ISPlasma2015/IC-PLANTS2015
    • Place of Presentation
      Nagoya University, Nagoya, Japan
    • Year and Date
      2015-03-30
    • Related Report
      2014 Annual Research Report
  • [Presentation] プラズマCVD 法による長波長応答型n 型a-C 半導体の創製2015

    • Author(s)
      長谷川翔平・本多謙介・永田祥也・山田昌央
    • Organizer
      日本化学会第95春季年会 2015年
    • Place of Presentation
      日本大学 千葉県船橋市
    • Year and Date
      2015-03-27
    • Related Report
      2014 Annual Research Report
  • [Presentation] Fabrication of B-doped DLC based interdigitated array microelectrodes and high sensitive detection of redox analytes with higher standard potential than H2O/O22014

    • Author(s)
      Kensuke Honda, Ryohei Kawajiri, Yohsuke Shimai
    • Organizer
      65th Annual Meeting of the International Society of Electrochemistry
    • Place of Presentation
      Lausanne, Switzerland
    • Year and Date
      2014-09-03
    • Related Report
      2014 Annual Research Report
  • [Patent(Industrial Property Rights)] アモルファスカーボンの製造方法及びアモルファスカーボン2016

    • Inventor(s)
      本多 謙介
    • Industrial Property Rights Holder
      国立大学法人山口大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2016-183910
    • Filing Date
      2016-09-21
    • Related Report
      2016 Annual Research Report

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Published: 2014-04-04   Modified: 2018-03-22  

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