Control of electronic structure by anisotropic strain in semiconducting silicide
| Project/Area Number |
26289093
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyushu Institute of Technology |
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Principal Investigator |
TERAI Yoshikazu 九州工業大学, 大学院情報工学研究院, 教授 (90360049)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
Fiscal Year 2016: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2015: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000)
Fiscal Year 2014: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
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| Keywords | シリサイド半導体 / 鉄シリサイド / バンド構造制御 / ひずみ導入 / バンド構造変化 / 半導体物性 / 光物性 |
|---|
| Outline of Final Research Achievements |
The purpose of this study is to control the band structure of semiconducting iron silicide by introducing anisotropic strain. The evaluation technology of strain, the strain relaxation mechanism, the epitaxial growth of iron silicide on strain relaxed SiGe, and photoluminescence(PL) lifetime were investigated. evaluated. As a result, a strain evaluation technique by polarized Raman spectroscopy was established. The strain relaxation due to Si defects was confirmed. The epitaxial growth of iron silicide on strain relaxed SiGe was succeeded for the first time. In the investigation of photoluminescence lifetime, the intrinsic PL lifetime due to the band-to-band transition of iron silicide was obtained.
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Report
(4 results)
Research Products
(56 results)
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[Journal Article] A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm2017
Author(s)
A. V. Shevlyagin, D. L. Goroshko, E. A. Chusovitin, S. A. Balagan, S. A. Dotcenko, K. N. Galkin, N. G. Galkin, T. S. Shamirzaev, A. K. Gutakovskii, A. V. Latyshev, M. Iinuma, and Y. Terai
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Journal Title
Journal of Applied Physics
Volume: 121
DOI
Related Report
Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
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