| Project/Area Number |
26289107
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | The University of Tokushima |
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Principal Investigator |
Nagase Masao 徳島大学, 大学院理工学研究部, 教授 (20393762)
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| Co-Investigator(Kenkyū-buntansha) |
関根 佳明 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学部, 研究主任 (70393783)
影島 博之 島根大学, 総合理工学研究科(研究院), 教授 (70374072)
大野 恭秀 徳島大学, ソシオテクノサイエンス研究部, 准教授 (90362623)
日比野 浩樹 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 部長 (60393740)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
Fiscal Year 2016: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2015: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2014: ¥11,570,000 (Direct Cost: ¥8,900,000、Indirect Cost: ¥2,670,000)
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| Keywords | グラフェン / 集積化デバイス / 赤外線加熱 / 表面構造制御 / 環境制御チャンバー / 電子デバイス / ナノ材料 / 異種機能集積化 / ナノコンタクト / 電子デバイス・機器 |
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| Outline of Final Research Achievements |
Heterogeneous integrated technology for graphene devices was studied. A large area single-crystal single-layer graphene was successfully grown on SiC substrate. High quality graphene was fabricated by controlling the surface structure of the SiC substrate using ultra high-speed high-temperature infrared rapid thermal annealer. Furthermore, various kinds of fabrication processes for integrated devices were examined. The effects of the processes for graphene properties were evaluated using the large area graphene samples without the influences of lithographic processes. A remarkable achievement is a finding of a specific water doping effect for graphene on SiC substrate.
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