CMOS FinFET technologies toward low-cost terahertz generation for safe and secure society
| Project/Area Number |
26289113
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
Matsukawa Takashi 国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, 研究グループ長 (70287986)
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| Co-Investigator(Kenkyū-buntansha) |
柳 永勲 国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, 上級主任研究員 (90312610)
昌原 明植 国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, 研究部門付き (50357993)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥16,510,000 (Direct Cost: ¥12,700,000、Indirect Cost: ¥3,810,000)
Fiscal Year 2016: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2015: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
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| Keywords | テラヘルツ波 / FinFET / 先端機能デバイス / 半導体超微細化 |
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| Outline of Final Research Achievements |
Though utilization of terahertz wave is indispensable for realization of safe and secure society, expensive equipment which utilizes pulsed laser to handle terahertz wave prevents the spreads of its use. In this study, fundamental technologies were developed to utilizes FinFET, as a state-of-the-art CMOS transistor, for the sub-terahertz wave generation. As the FinFET device technology, suppression of the flicker noise which degrades stability of the sub-terahertz oscillator was carried out. For further scaling of the FinFET to accomplish further increase in the oscillation frequency, optimization of doping condition in the FinFET to suppress the parasitic resistance was also carried out. The sub-terahertz oscillator was designed using SPICE model which reproduces the fabricated FinFET. Toward the demonstration of the FinFET-based oscillator, fabrication of the FinFET circuit test devices and construction of equipment for evaluation of the generated sub-terahertz wave were conducted.
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Report
(4 results)
Research Products
(14 results)
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[Journal Article] Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors2015
Author(s)
T. Matsukawa, K. Fukuda, Y. Liu, J. Tsukada, H. Yamauchi, K. Endo, Y. Ishikawa, S. O'uchi, S. Migita, Y. Morita, W. Mizubayashi, H. Ota, and M. Masahara
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Journal Title
Appl. Phys. Express
Volume: 8
Issue: 4
Pages: 044201-044201
DOI
NAID
ISSN
1882-0778, 1882-0786
Related Report
Peer Reviewed / Acknowledgement Compliant
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[Journal Article] Scaling breakthrough for analog/digital circuits by suppressing variability and low-frequency noise for FinFETs by amorphous metal gate technology2014
Author(s)
T. Matsukawa, K. Fukuda, Y.X. Liu, J. Tsukada, H. Yamauchi, Y. Ishikawa, K. Endo, S. O’uchi, S. Migita, W. Mizubayashi, Y. Morita, H. O ta, and M. Masahara
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Journal Title
Technical Digest of 2014 IEEE International Electron Devices Meeting (IEDM)
Volume: -
Pages: 299-312
DOI
NAID
Related Report
Peer Reviewed / Acknowledgement Compliant
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[Presentation] Scaling breakthrough for analog/digital circuits by suppressing variability and low-frequency noise for FinFETs by amorphous metal gate technology2014
Author(s)
T. Matsukawa, K. Fukuda, Y.X. Liu, J. Tsukada, H. Yamauchi, Y. Ishikawa, K. Endo, S. O’uchi, S. Migita, W. Mizubayashi, Y. Morita, H. Ota, and M. Masahara
Organizer
2014 IEEE International Electron Devices Meeting (IEDM)
Place of Presentation
Hilton San Francisco Union Square (San Francisco, USA)
Year and Date
2014-12-16
Related Report
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