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CMOS FinFET technologies toward low-cost terahertz generation for safe and secure society

Research Project

Project/Area Number 26289113
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypePartial Multi-year Fund
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionNational Institute of Advanced Industrial Science and Technology

Principal Investigator

Matsukawa Takashi  国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, 研究グループ長 (70287986)

Co-Investigator(Kenkyū-buntansha) 柳 永勲  国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, 上級主任研究員 (90312610)
昌原 明植  国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, 研究部門付き (50357993)
Project Period (FY) 2014-04-01 – 2017-03-31
Project Status Completed (Fiscal Year 2016)
Budget Amount *help
¥16,510,000 (Direct Cost: ¥12,700,000、Indirect Cost: ¥3,810,000)
Fiscal Year 2016: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2015: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
Keywordsテラヘルツ波 / FinFET / 先端機能デバイス / 半導体超微細化
Outline of Final Research Achievements

Though utilization of terahertz wave is indispensable for realization of safe and secure society, expensive equipment which utilizes pulsed laser to handle terahertz wave prevents the spreads of its use. In this study, fundamental technologies were developed to utilizes FinFET, as a state-of-the-art CMOS transistor, for the sub-terahertz wave generation. As the FinFET device technology, suppression of the flicker noise which degrades stability of the sub-terahertz oscillator was carried out. For further scaling of the FinFET to accomplish further increase in the oscillation frequency, optimization of doping condition in the FinFET to suppress the parasitic resistance was also carried out. The sub-terahertz oscillator was designed using SPICE model which reproduces the fabricated FinFET. Toward the demonstration of the FinFET-based oscillator, fabrication of the FinFET circuit test devices and construction of equipment for evaluation of the generated sub-terahertz wave were conducted.

Report

(4 results)
  • 2016 Annual Research Report   Final Research Report ( PDF )
  • 2015 Annual Research Report
  • 2014 Annual Research Report

Research Products

(14 results)

All 2017 2016 2015 2014 Other

All Journal Article (6 results) (of which Peer Reviewed: 3 results,  Acknowledgement Compliant: 6 results) Presentation (6 results) (of which Invited: 2 results) Remarks (2 results)

  • [Journal Article] Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation2017

    • Author(s)
      T. Matsukawa, Y. Liu, T. Mori, Y. Morita, S. Otsuka, S. O’uchi, H. Fuketa, S. Migita, and M. Masahara
    • Journal Title

      Solid-State Electronics

      Volume: 132 Pages: 103-108

    • DOI

      10.1016/j.sse.2017.03.014

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors2015

    • Author(s)
      T. Matsukawa, K. Fukuda, Y. Liu, J. Tsukada, H. Yamauchi, K. Endo, Y. Ishikawa, S. O'uchi, S. Migita, Y. Morita, W. Mizubayashi, H. Ota, and M. Masahara
    • Journal Title

      Appl. Phys. Express

      Volume: 8 Issue: 4 Pages: 044201-044201

    • DOI

      10.7567/apex.8.044201

    • NAID

      210000137471

    • ISSN
      1882-0778, 1882-0786
    • Related Report
      2015 Annual Research Report 2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] 先端CMOSトランジスタにおけるフリッカノイズ対策2015

    • Author(s)
      松川 貴、柳 永勛、福田浩一、大内真一、昌原明植
    • Journal Title

      月刊EMC

      Volume: 28巻11号 Pages: 208-213

    • Related Report
      2015 Annual Research Report
    • Acknowledgement Compliant
  • [Journal Article] 非晶質金属ゲート電極FinFETによるばらつき・低周波ノイズ抑制とアナログ・デジタル回路のスケーリング限界の改善2015

    • Author(s)
      松川 貴、福田浩一、柳 永勛、塚田順一、山内洋美、石川由紀、遠藤和彦、大内真一、右田真司、水林 亘、森田行則、太田裕之、昌原明植
    • Journal Title

      シリコンテクノロジー

      Volume: 177 Pages: 42-45

    • Related Report
      2014 Annual Research Report
    • Acknowledgement Compliant
  • [Journal Article] 先端CMOSトランジスタにおけるフリッカノイズ対策2015

    • Author(s)
      松川 貴、柳 永勛、福田 浩一、大内 真一、昌原 明植
    • Journal Title

      月刊EMC

      Volume: 印刷中

    • Related Report
      2014 Annual Research Report
    • Acknowledgement Compliant
  • [Journal Article] Scaling breakthrough for analog/digital circuits by suppressing variability and low-frequency noise for FinFETs by amorphous metal gate technology2014

    • Author(s)
      T. Matsukawa, K. Fukuda, Y.X. Liu, J. Tsukada, H. Yamauchi, Y. Ishikawa, K. Endo, S. O’uchi, S. Migita, W. Mizubayashi, Y. Morita, H. O ta, and M. Masahara
    • Journal Title

      Technical Digest of 2014 IEEE International Electron Devices Meeting (IEDM)

      Volume: - Pages: 299-312

    • DOI

      10.1109/iedm.2014.7047035

    • NAID

      110010010022

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Presentation] FinFET寄生抵抗ばらつきの解析:エクステンションドーピング条件の影響2016

    • Author(s)
      松川 貴,森 貴洋,森田行則,大塚慎太郎, 柳 永勛,大内真一,更田裕司,右田真司,昌原明植
    • Organizer
      2016年応用物理学会秋期学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県新潟市)
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
  • [Presentation] FinFETにおける特性ばらつきと低周波ノイズの抑制技術2015

    • Author(s)
      松川 貴、福田浩一、柳 永勛、塚田順一、山内洋美、石川由紀、遠藤和彦、大内真一、右田真司、水林 亘、森田行則、太田裕之、昌原明植
    • Organizer
      応用物理学会春期学術講演会
    • Place of Presentation
      東海大学湘南キャンパス (神奈川県)
    • Year and Date
      2015-03-11
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] 非晶質金属ゲート電極FinFETによるばらつき・低周波ノイズ抑制とアナログ・デジタル回路のスケーリング限界の改善2015

    • Author(s)
      松川 貴、福田浩一、柳 永勛、塚田順一、山内洋美、石川由紀、遠藤和彦、大内真一、右田真司、水林 亘、森田行則、太田裕之、昌原明植
    • Organizer
      電子情報通信学会 シリコン材料・デバイス研究会 (SDM)
    • Place of Presentation
      機械振興会館 (東京都)
    • Year and Date
      2015-01-27
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Scaling breakthrough for analog/digital circuits by suppressing variability and low-frequency noise for FinFETs by amorphous metal gate technology2014

    • Author(s)
      T. Matsukawa, K. Fukuda, Y.X. Liu, J. Tsukada, H. Yamauchi, Y. Ishikawa, K. Endo, S. O’uchi, S. Migita, W. Mizubayashi, Y. Morita, H. Ota, and M. Masahara
    • Organizer
      2014 IEEE International Electron Devices Meeting (IEDM)
    • Place of Presentation
      Hilton San Francisco Union Square (San Francisco, USA)
    • Year and Date
      2014-12-16
    • Related Report
      2014 Annual Research Report
  • [Presentation] CMOS FinFETによる低コストテラヘルツ波発生器の検討2014

    • Author(s)
      松川 貴、柳原昌志、柳 永勛、大野守史、田所宏文、昌原明植
    • Organizer
      応用物理学会秋期学術講演会
    • Place of Presentation
      北海道大学(北海道)
    • Year and Date
      2014-09-19
    • Related Report
      2014 Annual Research Report
  • [Presentation] 金属ゲートの仕事関数ばらつきによるFinFETのDIBLばらつきの解析2014

    • Author(s)
      松川 貴、福田浩一、柳 永勛、遠藤和彦、塚田順一、山内洋美、石川由紀、大内真一、右田真司、水林 亘、森田行則、太田裕之、昌原明植
    • Organizer
      応用物理学会秋期学術講演会
    • Place of Presentation
      北海道大学(北海道)
    • Year and Date
      2014-09-18
    • Related Report
      2014 Annual Research Report
  • [Remarks] (国研)産業技術総合研究所 ナノエレクトロニクス研究部門ナノCMOS集積グループのホームページ

    • URL

      https://unit.aist.go.jp/neri/nanocmos/index.html

    • Related Report
      2016 Annual Research Report
  • [Remarks] 産総研プレスリリース:ノイズを劇的に低減した立体型トランジスタを実現

    • URL

      http://www.aist.go.jp/aist_j/press_release/pr2014/pr20141215/pr20141215.html

    • Related Report
      2014 Annual Research Report

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Published: 2014-04-04   Modified: 2018-03-22  

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