| Budget Amount *help |
¥16,380,000 (Direct Cost: ¥12,600,000、Indirect Cost: ¥3,780,000)
Fiscal Year 2016: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2015: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2014: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
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| Outline of Final Research Achievements |
We studied fabrication method of β-CuGaO2 thin-films. First, we fabricated β-NaGaO2 thin-films as precursor materials; then, the film was subjected to ion-exchange of Na+ ions in the precursor films with Cu+. We successfully fabricated β-NaGaO2 thin-films by magnetron sputtering using β-NaGaO2 as a target material. β-CuGaO2 thin-films that exhibits good surface morphology were fabricated by ion-exchange of Na+ ions in the precursor β-NaGaO2 thin-film with Cu+ ions in CuCl vapor. Although the preferential orientation of the β-NaGaO2 films could not be controlled by magnetron sputtering, it was successfully controlled using electron-beam evaporation and sapphire substrates with various crystal orientations. However, the composition of precursor β-NaGaO2 film fabricated by sputtering and evaporation methods exhibited Na-poor composition. We found CVD is the preferable method to fabricate high quality and stoichiometric β-NaGaO2 precursor films.
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