|Budget Amount *help
¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
Fiscal Year 2016: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥6,890,000 (Direct Cost: ¥5,300,000、Indirect Cost: ¥1,590,000)
|Outline of Final Research Achievements
For effective use of energy and development of high performance electric and electronic devices, power devices using wide band gap semiconductors are increasingly required. In this study, boron nitride films were doped by adding dopants to the reaction field in vapor phase deposition process using a discharge plasma. As a result, the doping condition for increasing the electrical conduction of the films was found and the research direction for controlling the electrical conduction was established by characterization of the structure, composition, and electrical properties of the films.