Growth and bandgap controll of Cu2ZnSn(S, Se)4 single crystal grown by traveling heater method
| Project/Area Number |
26289378
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Energy engineering
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| Research Institution | University of Miyazaki |
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Principal Investigator |
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥8,710,000 (Direct Cost: ¥6,700,000、Indirect Cost: ¥2,010,000)
Fiscal Year 2016: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2015: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2014: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
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| Keywords | 太陽電池 / 化合物半導体 / レアメタルフリー / 電気特性 / 高効率太陽電池材料 / 半導体 / バルク結晶成長 / 基礎物性評価 |
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| Outline of Final Research Achievements |
High-quality Cu2ZnSn(S, Se)4 (CZTSSe) single crystals were grown by the traveling heater method (THM), which is an example of a solution growth process. The CZTSSe solute-Sn solvent pseudobinary system was investigated and the ranges of growth temperature and quantity of solvent were determined for THM growth. The CZTSSe single crystals were obtained from a 70-80 mol% CZTSSe solution at growth temperature 900 °C and speed 4-5 mm/day. The grown crystals were kesterite and nearly stoichiometric with slightly Cu-poor and Zn-rich despite the excess Sn used as the solvent. As the sulfur content x increases, the carrier concentration increases slightly but systematically between 2×10^17 and 3×10^17 cm3 while the mobility decreases from 35.1 to 10.4 cm2/(VS).
These data provide references for the results of characterization on thin film samples as well as giving insight into the defect equilibrium and resulting quantities such as doping and mobility affecting device performance.
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Report
(4 results)
Research Products
(15 results)
