Research on M-ary Unidirectional Error Control Codes for Multi-Level Flash Memories
| Project/Area Number |
26330059
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Computer system
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| Research Institution | Chiba University |
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Principal Investigator |
Kitakami Masato 千葉大学, 大学院融合科学研究科, 准教授 (20282832)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | 誤り制御符号 / 多レベルフラッシュメモリ / 単方向誤り / 隣接誤り / マルチページプログラミング / 誤り訂正符号 / フラッシュメモリ / 対称誤り |
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| Outline of Final Research Achievements |
In this research, effective codes for multi level cell flash memory capable of storing multi-bit value by one memory cell are developed. Here, multi level cell flash memory stores multi-bit value by gradually controlling the charge accumulated in the floating gate. We have developed a single adjacent error correction code that utilizes the fact that errors occurring in memory cells are limited to errors to neighboring values. In addition, in the multi-level cell flash memory, considering that multi-page programming is used to determine the value of a plurality of cells in a page from upper bits and a bit error correction code is used for each page. We have proposed an improved decoding method which achieves lower bit error rate.
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Report
(4 results)
Research Products
(7 results)
