Development of industrial growth technique for large crystals of incongruent melting compounds
| Project/Area Number |
26410236
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Inorganic industrial materials
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| Research Institution | University of Yamanashi |
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Principal Investigator |
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2015: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2014: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
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| Keywords | 結晶育成 / 単結晶 / 浮遊帯溶融法 / 結晶成長 / シンチレータ / 固液界面形状 / シンチレーター |
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| Outline of Final Research Achievements |
We tried to improve the crystal growth method by the infrared convergent heating floating zone method for an incongruent melting compound, which can’t be grown by the present industrial method such as the Czochraski method and the Bridgman method because the segregation control is necessary for the crystal growth of an incongruent melting compound. The growth conditions of Pr doped Lu3Al5O12 and Ce doped Gd2Si2O7 were optimized. We found the conditions for the stable melt zone and succeeded to reduce the cracks formed in the grown crystal. The diameter of these crystal achieved to 15 mm.
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Report
(4 results)
Research Products
(6 results)
