| Budget Amount *help |
¥24,570,000 (Direct Cost: ¥18,900,000、Indirect Cost: ¥5,670,000)
Fiscal Year 2016: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2015: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000)
Fiscal Year 2014: ¥13,780,000 (Direct Cost: ¥10,600,000、Indirect Cost: ¥3,180,000)
|
|---|
| Outline of Final Research Achievements |
For future realization of Ga2O3-based heterojunction devise, we compared two growth techniques of PLD and MBE, measured a band-alignment of (Al,Ga)2O3/Ga2O3 heterojunction, and evaluated electrical properties of modulation-doped (Al,Ga)2O3/ Ga2O3 structure. We found that MBE was better suited for obtaining flat film surface. While the (Al,Ga)2O3/Ga2O3 was found to be the Type I junction with 2:1 conduction-valence band discontinuity ratio. Furthermore, carrier confinement at the modulation-doped heterojunction was observed for the first time in the Ga2O3-based semiconductor. These findings suggest the future realization of Ga2O3 heterojunction devices.
|
