| Budget Amount *help |
¥23,530,000 (Direct Cost: ¥18,100,000、Indirect Cost: ¥5,430,000)
Fiscal Year 2016: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2015: ¥20,670,000 (Direct Cost: ¥15,900,000、Indirect Cost: ¥4,770,000)
Fiscal Year 2014: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Outline of Final Research Achievements |
This project aimed to develop the technique of electric-field control of magneto-optical effect in a ferromagnetic metal layer. We prepared junction structure by the combination of pulse laser deposition for dielectric materials and molecular beam epitaxy or sputtering techniques for metal materials. We found that SrHfO3 can exhibit a relatively high dielectric constant of about 25 with low leak current, which is suitable for voltage-controlled devices. In the device with FeB ferromagnetic layer, we realized the modification of Kerr rotation angle of 0.03 degree, which corresponds to about 60 fJ/Vm as the voltage-induced anisotropy change. We also found that Pt doping at the Fe/MgO interface is effective to enhance the voltage effect as well as the interface magnetic anisotropy. By combining the developed technique, highly-efficient electric-field control of magneto-optical effects can be expected.
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