Nanoscopic studies on the mechanism of the ferromagnetism in GaMnAs

• Project/Area Number: 26790039
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Applied materials
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: kaku shigeru 東京工業大学, 理学院, 助教 (80583137)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Project Status: Completed (Fiscal Year 2016)
• Budget Amount: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000); Fiscal Year 2015: ¥390,000 (Direct Cost: ¥300,000、Indirect Cost: ¥90,000); Fiscal Year 2014: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
• Keywords: スピントロニクス / 表面 / ナノ / 走査プローブ顕微鏡 / 磁性半導体 / スピン / 超高真空 / 希薄磁性半導体 / スピンエレクトロニクス

Outline of Final Research Achievements

GaMnAs is one of the typical diluted magnetic semiconductors which have both natures of semiconductors and ferromagnetics. The mechanism of the ferromagnetism in GaMnAs has not been clarified perfectly until now. We have tried to measure the spin-polarized electronic structure whose understanding may be important clues to clarify the mechanism using by STM, SP-STM and BEEM from the nanoscopic perspective. The growth of the sample structure suiting with our BEEM measurement is so difficult that we cannot make it successful, while we could conduct a series of experiments with SP-STM technique. We compared the two different dI/dV spectra measured in cases of spin up and spin down of a GaMnAs, respectively.Since we got preliminary results and also some points that should be improved in the measurement methods, it is expected that these additional experiments will give us clearer understanding about the mechanism.

Research Products

• [Journal Article] Magnetic Anisotropy Constants and Anisotropic Magneto-Resistances in GaMnAs Depending on Layer Thickness (2014)
  • Author(s): Daiki Nozaki, Shigeru Kaku, and Junji Yoshino
  • Journal Title: Proceedings of the International Symposium on Science Explored by Ultra Slow Muon (USM2013) Volume: 2
  • Peer Reviewed / Acknowledgement Compliant
• [Presentation] Scanning mode manipulation of Ga adatom on GaAs(110) surface (2017)
  • Author(s): S. Kaku, K. Imamiya, T. Ando, J. Yoshino
  • Organizer: The 64th JSAP Spring Meeting 2017
  • Place of Presentation: Pacifico Yokohama
  • Year and Date: 2017-03-14
• [Presentation] Real-time STM Imaging of Ga Adatom Motion Clinging to the Tip on a GaAs(110) Surface (2016)
  • Author(s): S. Kaku, K. Imamiya, T. Ando, J. Yoshino
  • Organizer: ICSPM24
  • Place of Presentation: Hawaii convention center
  • Year and Date: 2016-12-14
  • Int'l Joint Research
• [Presentation] Study of spin properties on GaMnAs(110) surface by STM/SP-STM (2016)
  • Author(s): S. Kaku, T. Ando, K. Imamiya, and J. Yoshino
  • Organizer: SPSTM6
  • Place of Presentation: Chiba University
  • Year and Date: 2016-08-28
  • Int'l Joint Research
• [Presentation] STM/STS measurements of local electronic states on Mn impurities on GaAs(110) surface/subsurface (2016)
  • Author(s): S. Kaku, M. Tsukui, M. Hiraoka, J. Yoshino
  • Organizer: PASPS-9
  • Place of Presentation: Kobe International Conference Center
  • Year and Date: 2016-08-08
  • Int'l Joint Research
• [Presentation] MnドープInAs-GaSb超格子の熱電特性 (2016)
  • Author(s): 武富 優綺、加来 滋、吉野 淳二
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学
  • Year and Date: 2016-03-19
• [Presentation] Ga1-xMnxAsの巨大熱電能の起源の解明 (2016)
  • Author(s): 荒川 和哉、武富 優綺、加来 滋、吉野 淳二
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学
  • Year and Date: 2016-03-19
• [Presentation] Thermoelectric Character of Mn doped InAs/GaSb Supperlattices (2016)
  • Author(s): Y.Taketomi, S.Kaku and J.Yoshino
  • Organizer: International USMM &CMSI Workshop
  • Place of Presentation: 東京大学
  • Year and Date: 2016-01-05
  • Int'l Joint Research
• [Presentation] Cross-sectional STM/STS study of AlSb/InAs/GaSb/AlSb hetero-structures (2016)
  • Author(s): Tatsuhito Ando, Shigeru Kaku, and Junji Yoshino
  • Organizer: International USMM &CMSI Workshop
  • Place of Presentation: 東京大学
  • Year and Date: 2016-01-05
  • Int'l Joint Research
• [Presentation] X-STM observation on (110) surface of AlSb/InAs/GaSb/AlSb hetero-structure (2015)
  • Author(s): T. Ando, S. Kaku, M. Tsukui, and J. Yoshino
  • Organizer: MSS-17
  • Place of Presentation: 仙台国際センター
  • Year and Date: 2015-07-26
  • Int'l Joint Research
• [Presentation] X-STM measurements of band bending across GaAs/AlAs heterojunction (2015)
  • Author(s): S. Kaku, M. Tsukui, T. Ando, and J. Yoshino
  • Organizer: MSS-17
  • Place of Presentation: 仙台国際センター
  • Year and Date: 2015-07-26
  • Int'l Joint Research
• [Presentation] Thermoelectric Measurement of GaSb/InAs/AlSb Superlattices (2015)
  • Author(s): Y.Taketomi, K.Arakawa, S.Kaku, and J.Yoshino
  • Organizer: 34th Electronic Materials Symposium
  • Place of Presentation: ラフォーレ琵琶湖
  • Year and Date: 2015-07-15
• [Presentation] GaMnAsの巨大熱電能 (2015)
  • Author(s): K.Arakawa, Y.Taketomi, S.Kaku, and J.Yoshino
  • Organizer: 34th Electronic Materials Symposium
  • Place of Presentation: ラフォーレ琵琶湖
  • Year and Date: 2015-07-15
• [Presentation] GaAs中Mn不純物状態のSTM観察 (2015)
  • Author(s): 津久井雅之、加来滋、吉野淳二
  • Organizer: 第62回 応用物理学春季学術講演会
  • Place of Presentation: 東海大学
  • Year and Date: 2015-03-19
• [Presentation] BEEMによる量子井戸構造の解析と界面の評価 (2014)
  • Author(s): 今宮健太，加来滋，津久井雅之，吉野淳二
  • Organizer: 第75回 応用物理学秋季学術講演会
  • Place of Presentation: 北海道大学
  • Year and Date: 2014-09-19
• [Presentation] GaAs(001)表面上への平坦金属薄膜の形成 (2014)
  • Author(s): 加来滋，今宮健太，津久井雅之，吉野淳二
  • Organizer: 第75回 応用物理学秋季学術講演会
  • Place of Presentation: 北海道大学
  • Year and Date: 2014-09-17
• [Presentation] Development of BEEM technique for study of quantum wells (2014)
  • Author(s): K. Imamiya, M. Hiraoka, M. Tsukui, S. Kaku and J. Yoshino
  • Organizer: 33rd Electronic Materials Symposium
  • Place of Presentation: ラフォーレ修善寺
  • Year and Date: 2014-07-09