Effect of energy filtering due to donor atoms near source edge in Si nano-transistors
Project/Area Number |
26820127
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Multi-year Fund |
Research Field |
Electron device/Electronic equipment
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Research Institution | Shizuoka University |
Principal Investigator |
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Project Period (FY) |
2014-04-01 – 2016-03-31
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Project Status |
Completed (Fiscal Year 2015)
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Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2015: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2014: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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Keywords | 電子デバイス・機器 / シングルドーパント / シリコン / 量子ドット / ドーパント原子 / ナノデバイス / トランジスタ / 接合ダイオード |
Outline of Final Research Achievements |
We fabricated nanoscale Si transistors in which a few donor-atoms control the transport characteristics. In transistors with non-doped channels, donor atoms diffused near the source edge may work as a path, possibly filtering the energy of the incoming electrons. For such devices, single-electron tunneling (SET) can be observed up to ~100K. In transistors with selectively-doped channels, strongly-coupled donor atoms in the center of the channel can form a dominant quantum dot (QD). For the narrowest-channel devices, SET behavior is observed even up to room temperature. This shows the possibility of controlling the transport mechanism in nanoscale transistors. The position of the QD was also systematically changed between center and source edge. An optimized condition for high-temperature operation can be thus identified as a next step.
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Report
(3 results)
Research Products
(71 results)
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[Presentation] Atomic and molecular effects based on dopants in silicon nanodevices2015
Author(s)
Daniel Moraru, Arup Samanta, Krzysztof Tyszka, Manoharan Muruganathan, Le The Anh, Takeshi Mizuno, Ryszard Jablonski, Hiroshi Mizuta, Michiharu Tabe
Organizer
ICSS Meeting
Place of Presentation
Holiday Inn Resort Phuket, Phuket, THAILAND
Year and Date
2015-11-04
Related Report
Int'l Joint Research / Invited
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[Presentation] Effect of individual dopants in nano-SOI-MOSFETs and nano-pn-diodes2015
Author(s)
Michiharu Tabe, Daniel Moraru, Arup Samanta, Krzysztof Tyszka, Hoang Nhat Tan, Yuuki Takasu, Ryszard Jablonski, Le The Anh, Hiroshi Mizuta, Takeshi Mizuno
Organizer
228th ECS Meeting
Place of Presentation
Phoenix Convention Center,Phoenix, AZ, USA
Year and Date
2015-10-11
Related Report
Int'l Joint Research / Invited
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[Presentation] ドーパントによるバンド間トンネルの増強効果2015
Author(s)
Hoang Nhat Tan, Daniel Moraru, Le The Anh, Muruganathan Manoharan,Takeshi Mizuno, Hiroshi Mizuta, Michiharu Tabe
Organizer
2015年第76回応用物理学会秋季学術講演会
Place of Presentation
名古屋国際会議場(愛知県名古屋市)
Year and Date
2015-09-13
Related Report
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[Presentation] Dopant-cluster-assisted tunnelling in Si nanodevices2015
Author(s)
Michiharu Tabe, Daniel Moraru, Arup Samanta, Hoang Nhat Tan, Le The Anh, Muruganathan Manoharan, Hiroshi Mizuta and Takeshi Mizuno
Organizer
Silicon Quantum Electronics Workshop 2015
Place of Presentation
Kagawa International Conference Hall, KAGAWA
Year and Date
2015-08-04
Related Report
Int'l Joint Research
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[Presentation] Dopant-assisted tunnel-current enhancement in two-dimensional Esaki diodes2015
Author(s)
Hoang Nhat Tan, Daniel Moraru, Krzysztof Tyszka, Anak Agung Ngurah Gde Sapteka, Sri Purwiyanti Surya, Le The Anh, Muruganathan Manoharan, Takeshi Mizuno, Ryszard Jablonski, Djoko Hartanto, Hiroshi Mizuta and Michiharu Tabe
Organizer
2015 Silicon Nanoelectronics Workshop
Place of Presentation
Rihga Royal Hotel Kyoto, KYOTO
Year and Date
2015-06-14
Related Report
Int'l Joint Research
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[Presentation] Tunneling via single and coupled dopant atoms in Si nanodevices2015
Author(s)
Daniel Moraru, Arup Samanta, Krzysztof Tyszka, Le The Anh, Muruganathan Manoharan, Takeshi Mizuno, Ryszard Jablonski, Hiroshi Mizuta and Michiharu Tabe
Organizer
EMN Meeting on Quantum Technology
Place of Presentation
Beijing Xijiao Hotel, Beijing, CHINA
Year and Date
2015-04-14
Related Report
Int'l Joint Research / Invited
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[Presentation] Effect of Individual Dopants in Esaki Tunneling Diodes2015
Author(s)
Hoang Nhat Tan, Daniel Moraru, Ryosuke Unno, Anak Agung Ngurah Gde Sapteka, Sri Purwiyanti, Le The Anh, Muruganathan Manoharan,Takeshi Mizuno, Hiroshi Mizuta, Djoko Hartanto, Michiharu Tabe
Organizer
2015年 第62回応用物理学会春季学術講演会
Place of Presentation
東海大学湘南キャンパス(神奈川県・平塚市)
Year and Date
2015-03-12
Related Report
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[Presentation] Transport Phenomena in Nanoscale Silicon Tunneling pn Diodes2014
Author(s)
Anak Agung Ngurah Gde Sapteka, Sri Purwiyanti, Hoang Nhat Tan, Ryosuke Unno, Daniel Moraru,Takeshi Mizuno, Arief Udhiarto, Djoko Hartanto, Michiharu Tabe
Organizer
The 2nd International Conference on Nano Electronics Research and Education (ICNERE2014)
Place of Presentation
静岡大学浜松キャンパス(静岡県・浜松市)
Year and Date
2014-11-24
Related Report
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