陽極酸化プロセスによるAl_2O_3-InP超高速n-チャネルMOSFETの製作

• Project/Area Number: 56750192
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: 電子材料工学
• Research Institution: Hokkaido University
• Principal Investigator: 澤田 孝幸 北海道大学, 工学部, 助手
• Project Period (FY): 1981
• Project Status: Completed (Fiscal Year 1981)
• Budget Amount: ¥800,000 (Direct Cost: ¥800,000); Fiscal Year 1981: ¥800,000 (Direct Cost: ¥800,000)