InGaAs/InPヘテロ構造MISFETの光応答に関する基礎研究

• Project/Area Number: 58750001
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Applied materials
• Research Institution: Hokkaido University
• Principal Investigator: 澤田 孝幸 北海道大学, 工学部, 助手
• Project Period (FY): 1983
• Project Status: Completed (Fiscal Year 1983)
• Budget Amount: ¥980,000 (Direct Cost: ¥980,000); Fiscal Year 1983: ¥980,000 (Direct Cost: ¥980,000)