高臨界温度Nb_3(Ge, Si)薄膜を用いた高温動作・接合型ジョセフソン素子の作製

• Project/Area Number: 58850057
• Research Category: Grant-in-Aid for Developmental Scientific Research
• Allocation Type: Single-year Grants
• Research Field: 電子材料工学
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: 山中 俊一 東京工業大学, 工学部, 教授
• Project Period (FY): 1983 – 1984
• Project Status: Completed (Fiscal Year 1984)
• Budget Amount: ¥5,500,000 (Direct Cost: ¥5,500,000); Fiscal Year 1984: ¥300,000 (Direct Cost: ¥300,000); Fiscal Year 1983: ¥5,200,000 (Direct Cost: ¥5,200,000)