非晶質絶縁物上への半導体単結晶薄膜の低温成長

• Project/Area Number: 59750221
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: 電子材料工学
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: 浅野 種正 東京工業大学, 助手
• Project Period (FY): 1984
• Project Status: Completed (Fiscal Year 1984)
• Budget Amount: ¥900,000 (Direct Cost: ¥900,000); Fiscal Year 1984: ¥900,000 (Direct Cost: ¥900,000)