過渡容量法によるInGaAs混晶およびヘテロ接合界面の深い準位の評価

• Project/Area Number: 61750288
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: 電子材料工学
• Research Institution: Kushiro National College of Technology
• Principal Investigator: 橋詰 保 釧路工業高専, 助手
• Project Period (FY): 1986
• Project Status: Completed (Fiscal Year 1986)
• Budget Amount: ¥900,000 (Direct Cost: ¥900,000); Fiscal Year 1986: ¥900,000 (Direct Cost: ¥900,000)