Heats of Formation of Complex Compounds (Compounds Semiconductor, New Ceramics)
Project/Area Number |
62550481
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Research Category |
Grant-in-Aid for General Scientific Research (C)
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Allocation Type | Single-year Grants |
Research Field |
金属精錬・金属化学
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Research Institution | Tohoku University |
Principal Investigator |
IGUCHI Yasutaka Faculty of Engineering Tohoku University, Professor, 工学部, 教授 (90005413)
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Project Period (FY) |
1987 – 1988
|
Project Status |
Completed (Fiscal Year 1989)
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Budget Amount *help |
¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1988: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 1987: ¥1,500,000 (Direct Cost: ¥1,500,000)
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Keywords | Calorimeter / Heats of Solution / Heats of Formation / Compound Semiconductor / Ceramics / セラミックス / カロリメーター |
Research Abstract |
Compound semiconductors and new ceramics, which are very important functional materials for electronics and structural materials under ultimate conditions, are multicomponent compounds. Heats of formation are one of necessary properties for stability index, rational production and quality control of these complex compounds. However, few data are available. In this study, a solution calorimeter (Calvet type) was designed and constructed to determine the heats of formation of various kinds of complex compounds. The calorimeter consists of a furnace with large heat capacity and wide uniform temperature zone, a copper isothermal jacket with two holes for the calorimeter cells., and 104 thermocouple piles. Heat transfer and a program for caloric evaluation by the personal computer were checked at room temperature and then temperature distribution inside the calorimeter cell and heat transfer at higher temperature were measured. The heat capacity of the calorimeter was determined by supplying a constant electric power to the internal heater on dropping Sn into liquid Sn bath. In order to check the accuracy of the calorimeter, the heats of mixing of liquid Sn-Pb alloys were measured by adding solid Pb to liquid Sn bath at 573 K. Obtained results are in good agreement with the data reported by Kleppa. Heats of solution of In,Ga,InP and GaAs into Sn bath have been determined at 750 K. By combining these directly measured values with thermodynamic data, heats of formation of InP and GaAs have been evaluated and compared with the reported data. There are good agreements each other except for GaAs.
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Report
(3 results)
Research Products
(2 results)