高不整合半導体ヘテロエピタキシーにおける基板結晶表面の制御

• Project/Area Number: 63750015
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Applied materials
• Research Institution: Nagoya University
• Principal Investigator: 平松 和政 名古屋大学, 工学部, 助手
• Project Period (FY): 1988
• Project Status: Completed (Fiscal Year 1988)
• Budget Amount: ¥1,000,000 (Direct Cost: ¥1,000,000); Fiscal Year 1988: ¥1,000,000 (Direct Cost: ¥1,000,000)