原子層MOCVD法による高温超伝導薄膜デバイスに関する研究

Research Project

Project/Area Number	97J04348
Research Category	Grant-in-Aid for JSPS Fellows
Allocation Type	Single-year Grants
Section	国内
Research Field	Applied materials science/Crystal engineering
Research Institution	Tokyo Institute of Technology
Principal Investigator	山本修一郎
Project Period (FY)	1998
Project Status	Completed (Fiscal Year 1998)
Budget Amount *help	¥900,000 (Direct Cost: ¥900,000) Fiscal Year 1998: ¥900,000 (Direct Cost: ¥900,000)