化合物半導体立体量子構造のゲート制御による単電子デバイスの高温動作化と高集積化

• Project/Area Number: 98J02337
• Research Category: Grant-in-Aid for JSPS Fellows
• Allocation Type: Single-year Grants
• Section: 国内
• Research Field: Electronic materials/Electric materials
• Research Institution: Hokkaido University
• Principal Investigator: 岡田 浩
• Project Period (FY): 1998 – 2000
• Project Status: Completed (Fiscal Year 2000)
• Budget Amount: ¥4,100,000 (Direct Cost: ¥4,100,000); Fiscal Year 2000: ¥1,300,000 (Direct Cost: ¥1,300,000); Fiscal Year 1999: ¥1,300,000 (Direct Cost: ¥1,300,000); Fiscal Year 1998: ¥1,500,000 (Direct Cost: ¥1,500,000)