GaInAsP混晶半導体を用いた可視光半導体レーザの開発研究

• Project/Area Number: X00210----575191
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: 電子材料工学
• Research Institution: Kyoto University
• Principal Investigator: 鈴木 彰 京都大学, 工学部, 助手
• Project Period (FY): 1980
• Project Status: Completed (Fiscal Year 1980)
• Budget Amount: ¥850,000 (Direct Cost: ¥850,000); Fiscal Year 1980: ¥850,000 (Direct Cost: ¥850,000)