人工IV族半導体極微細構造を用いた超高速光・電子デバイスの開発

• 研究課題/領域番号: 11232201
• 研究種目: 特定領域研究
• 配分区分: 補助金
• 審査区分: 理工系
• 研究機関: 東北大学
• 研究代表者: 室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)
• 研究分担者: 土屋 敏章 島根大学, 総合理工学部, 教授 (20304248) ; 栗野 浩之 東北大学, 大学院・工学研究科, 助教授 (70282093) ; 小柳 光正 東北大学, 大学院・工学研究科, 教授 (60205531) ; 杉山 直治 (株)東芝, 基礎研究所, 研究主務 ; 小野 昭一 アルプス電気(株), 最高技術顧問(常勤研究職) ; 松浦 孝 東北大学, 電気通信研究所, 助教授 (60181690)
• 研究期間 (年度): 1999 – 2003
• 研究課題ステータス: 完了 (2003年度)
• 配分額: 190,800千円 (直接経費: 190,800千円); 2003年度: 21,400千円 (直接経費: 21,400千円); 2002年度: 30,600千円 (直接経費: 30,600千円); 2001年度: 32,000千円 (直接経費: 32,000千円); 2000年度: 54,600千円 (直接経費: 54,600千円); 1999年度: 52,200千円 (直接経費: 52,200千円)
• キーワード: SiGe / SiGeC / MOS / HBT / CVD / 選択成長 / 不純物ドーピング / 高精度エッチング / CVD低温選択成長 / in-situ不純物ドーピング / 不純物拡散 / 高選択異方性エッチング

研究概要

本研究では、人工IV族半導体超高速光・電子デバイスを開発することを目指し、Si-Ge(-C)系のIV族半導体極微細構造をデバイスに搭載した極微細MOSFET、ヘテロバイポーラトランジスタ(HBT)、Si/SiGe/Si-SOI構造の新デバイス等による低電圧・低消費電力・超高速・新機能付集積回路を設計し、それを表面・界面構造劣化の生じない低温高清浄プロセスを駆使して製作する技術を構築し、デバイス試作とその評価・デバイス物理の検討を通して極微細化・超高速化の最適方法を明らかにしようとしている。本年度は5年計画の第5年目として、新高精度要素プロセスの標準デバイス製作プロセスへの導入と、新構造原子制御半導体の応用による新物性・新機能のデバイス搭載について研究した。具体的には、マルチステップアニール法による選択成長SiGeの低抵抗Niシリサイド形成技術をElvatedソース・ドレイン構造に適用し、高性能完全空乏型SOI-MOSFETを実現した。また、SiGe選択エッチングによるマルチチャネルMOS構造を提案し、超高電流駆動能力化に有効であることを示した。酸化濃縮により形成した高品質SiGe-On-Insulator(SGOI)基板上に成長させた歪Siをチャネルに適用したMOSデバイスは高電流駆動力化と同時に基板浮遊効果が抑制されるごとを明らかにした。さらに、SiGeヘテロチャネルpMOSFETにおける低周波雑音強度は界面捕獲準位密度にほぼ比例して増加することを見いだすとともに、BドープSiGe薄膜からのSi/SiGe/Siヘテロ構造へのB拡散工程において、SiGe中でのB拡散抑制・偏析現象によるB拡散層の極浅化・低抵抗化現象を見いだし、短チャネルSiGeヘテロチャネルMOSFETの高性能化に有効であることを実証した。このようにデバイス主要部分へのSi-Ge(-C)系IV族半導体薄膜適用は、デバイスの極微細化・超高速化に有効であることを示した。

研究成果

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• [文献書誌] J.Noh et al.: "Relationship between Impurity (B or P) and Carrier Concentration in SiGe(C) Epitaxial Film Produced by Thermal Treatment"Appl.Surf.Sci.. Vol.224. 77-81 (2004)
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• [文献書誌] M.Fujiu et al.: "Effect of Carbon on the Thermal Stability of a Si Atomic Layer on Ge(1 0 0)"Appl.Surf.Sci.. Vol.224. 206-209 (2004)
• [文献書誌] S.Takagi et al.: "Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS"Appl.Surf.Sci.. Vol.224. 241-247 (2004)
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• [文献書誌] H.-S.Cho et al.: "Etching Characteristics of Impurity-Doped Si_<1-x>Ge_x Epitaxial Films Using Electron-Cyclotron-Resonance Chlorine Plasma"First International SiGe Technology and Device Meeting (ISTDM 2003). 181-182 (2003)
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• [文献書誌] Y.Shimamune et al.: "Formation of Heavily P Doped Si Epitaxial Film on Si(100) by Multiple Atomic-Layer Doping Technique"First International SiGe Technology and Device Meeting (ISTDM 2003). 247-248 (2003)
• [文献書誌] M.Fujiu et al.: "Carbon Effect on Thermal Stability of Si Atomic Layer on Ge(100)"First International SiGe Technology and Device Meeting (ISTDM 2003). 249-250 (2003)
• [文献書誌] S.Takehiro et al.: "Characterization of High Ge Fraction SiGe-Channel MOSFET with Ultrashallow Source/Drain Formation by Selective B-Doped SiGe CVD"3rd Int. Conf. on SiGe(C) Epitaxy and Heterostructures (ICSI3). 179-181 (2003)
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• [文献書誌] T.Kanetsuna et al.: "Surface Adsorption and Reaction of Chlorine on Impurity-Doped Single Crystalline Si Using Electron Cyclotron Resonance Plasma"J. Electrochem. Soc.. Vol.148, No.8. G420-G423 (2001)
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• [文献書誌] Y.Shimamune et al.: "Epitaxial Growth of Heavily P-doped Si Films at 450℃ by Alternately Supplied PH3 and SiH_4"J. Phys. IV France.. Vol.11, Pr3. 255-260 (2001)
• [文献書誌] T.Tsuchiya et al.: "Low-Frequency Noise in Si_<1-x>Ge_x p-Channel Metal Oxide Semiconductor Field-Effect Transistors"Jpn. J. Appl. Phys.. Vol.40, Part 1. 5290-5293 (2001)
• [文献書誌] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction in MOSFETs Using Selective Si_<1-x>Ge_x CVD"Materials Science and Engineering B.. Vol.89, Issues 1-3. 120-124 (2002)
• [文献書誌] T.Sadoh et al.: "Thermal stability of B in poly-SiGe on SiON"Materials Science and Engineering B. Vol.89. 129-132 (2002)
• [文献書誌] T.Sadoh et al.: "Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON"Jpn. J. Appl. Phys.. (to be published). (2002)
• [文献書誌] Y.Shimamune et al.: "Doping and Electrical Characteristics of Si Films Eptaxially Grown at 450℃ by Allernaick Supplied PH_3 and SiH_4"2001 Spring Meeting, The European Materials Research Society, Strasbourg, France. D-X,3 (2001)
• [文献書誌] F.Fujiu et al.: "Influence of Carbon on Thermal Stability of Silicon Atomic Layer Formed on Ge(100)"2001 Spring Meeting, The European Materials Research Society. D-VIII/P9 (2001)
• [文献書誌] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction MOSFETs Using Selective Si_<1-x>Ge_x"2001 Spring Meeting, The European Materials Research Society. DV/P20 (2001)
• [文献書誌] A.Tobioka et al.: "Study on Solid Phase Reaction in Ti/p^+-Si_<1-x>Ge_xC_y/Si Contacts"2001 Spring Meeting, The European Materials Research Society. D-XIII/P1 (2001)
• [文献書誌] J.Murota et al.: "Atomically Precise Control of Heterointer faces for High-Performance SiGe-Based Heterodevices"2001 Advanced Research Workshop, Future Trends in Microelectronics. 51 (2001)
• [文献書誌] J.Murota et al.: "Atomically Controlled Processing for Group IV Semiconductors (Keynote Lecture)"9th European Conference on Applications of Surface and Interface Analysis (SIA). 20 (2001)
• [文献書誌] T.Seino: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"9th European Conference on Applications of Surface and Interface Analysis (SIA). 193 (2001)
• [文献書誌] O.Jintsugawa et al.: "Thermal Nitridation of Ulirathin SiO_2 on Si by NH_3"9th European Conference on Applications of Surface and Interface Analysis (SIA). 194 (2001)
• [文献書誌] J.Murota et al.: "CVD SiGe(C) Epitaxial Growth and Its Application to MOS Devices (Invited Paper)"The Sixth International Conference on Solid-State and Integrated-Circuit Technology. 525-530 (2001)
• [文献書誌] T.Tsuchiya et al.: "Exploration of SiGe/Si Heterostructure Interface in SiGe-Channel MOSFETs (Invited Paper)"The Sixth International Conference on Solid-State and Integrated-Circuit Technology. 575-579 (2001)
• [文献書誌] T.Seino et al.: "Atomic-Order Plasma Nitridation of Ultrathin Silicon Dioxide Films"AVS 48th International Symposium. 53 (2001)
• [文献書誌] Y.Hashiba: "Growth Characteristics of Si_<1-x>Ge_xC_y on Si(100) and SiO_2 in Ultraclean Low-Temperature LPCVD"AVS 48th International Symposium. 135 (2001)
• [文献書誌] D.Muto et al.: "Self-Limited Layer-by-Layer Growth of Si by Alternated SiH_4 Supply and Ar Plasma Exposure"AVS 48th International Symposium. 179 (2001)
• [文献書誌] T.Matsuura et al.: "Application of Photosensitive Methylsilsesquiazane(MSZ) to Lithographic Fabrication of Three Dimensional Periodic Structures"AVS 48th International Symposium. 229 (2001)
• [文献書誌] Y.C.jeong et al.: "Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH_4 Reaction"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.8.3 (2001)
• [文献書誌] Y.Shimamune et al.: "Heavy Doping Characteristics of Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.8.4 (2001)
• [文献書誌] T.Sadoh et al.: "Thermal stability of B in poly-SiGe on SiON"E-MRS Spring Meeting. D-V/P22 (2001)
• [文献書誌] M.Miyao et al.: "Post-annealing behavior of in-situ doped Poly-SiGe on SiON"The 13th International Conference on Crystal Growth (ICCG13). 31p-S13-04 (2001)
• [文献書誌] T.Sadoh et al.: "Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON"International Conference on Solid State Devices and Materials. (2001)
• [文献書誌] H.Choi et al.: "New SOI Flash Memory with Side Channel and Side Floating Gate"Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials. 246-247 (2001)
• [文献書誌] H.Oh et al.: "Ultra-Shallow Junction Formed Using Laser Annealing for Sub-50nm MOS"Extended Abstracts of the Second International Workshop on Junction Technology. 95-98 (2001)
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• [文献書誌] K.Koh et al.: "Ultra-shallow Junction of SOI MOSFET with In-situ Elevated SiGe Source/Drain"Abstract model E-MRS 2001 Spring Meeting. D.27 (2001)
• [文献書誌] T.Tsuchiya et al.: "Noise Characteristics in Floating-Body SOI MOSFETs"International Conf. on Solid State Devices and Materials. 272-273 (2001)
• [文献書誌] T.Seino et al: "Contribution of Radicals and Ions in Atomic-Order Plasma Nitridation of Si"Appl.Phys.Lett.. Vol.76,No.3. 342-344 (2000)
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• [文献書誌] Y.Shimamune et al: "Atomic-Layer Adsorption of P on Si(100) and Ge(100) by PH_3 Using an Ultraclean Low-Pressure Chemical Vapor Deposition"Appl.Surf.Sci.. Vol.162-163. 390-394 (2000)
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• [文献書誌] Y.Shimamune et al: "Atomic-Layer Doping in Si by Alternately Supplied PH_3 and SiH_4"Thin Solid Films. Vol.380. 134-136 (2000)
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• [文献書誌] T.Watanabe et al: "Atomic-Order Thermal Nitridation of Si (100) and Subsequent Growth of Si"J.Vac.Sci.Technol.A. Vol.19,No.4(in press). (2000)
• [文献書誌] D.Lee et al: "Phosphorus Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH_4-GeH_4-CH_3SiH_3-PH_3-H_2 Gas System"Jpn.J.Appl.Phys.. Vol.40,No.4B(in press). (2001)
• [文献書誌] T.Kanetsuna et al: "Surface Adsorption and Reaction of Chlorine on Impurity Doped Si Using an ECR Plasma"Abs.of 197th Meeting of the Electrochemical Society. 294 (2000)
• [文献書誌] Y.Yamamoto et al: "Surface Adsorption of WF_6 on Si and SiO_2 in Selective W-CVD"Abs.of 197th Meeting of the Electrochemical Society. 928 (2000)
• [文献書誌] D.Lee et al: "In-Situ Impurity Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth Using Ultraclean LPCVD"Abs.of 2000 International Conf.on Solid State Devices and Materials. 206-207 (2000)
• [文献書誌] T.Matsuura et al: "A Novel Lithographic Method for Fabricating Three Dimensional Periodic Stacks"Abs.of 2000 International Conf.on Solid State Devices and Materials. 542-543 (2000)
• [文献書誌] M.Fujiu et al: "Thermal Stability of Si and C Atomic Layers Formed on Ge(100) in Silane and Methylsilane Reactions"Abs.of American Vacuum Society 47th Internatonal Symposium : Vacuum Thin Films, Surafces/Interfaces, Processing & NANO-6. TF-MoM4 (2000)
• [文献書誌] O.Jintsugawa et al: "Thermal Nitridation of Ultrathin Silicon Dioxide Films Using NH_3 Gas"Abs.of American Vacuum Society 47th Internatonal Symposium : Vacuum Thin Films, Surafces/Interfaces, Processing & NANO-6. SC1+EL+SS-Mo4 (2000)
• [文献書誌] T.Seino et al: "Thermal Effects in Atomic-Order Nitridation of Si by a Nitrigen Plasma"Abs.of American Vacuum Society 47th Internatonal Symposium : Vacuum Thin Films, Surafces/Interfaces, Processing & NANO-6. PS-WeP17 (2000)
• [文献書誌] K.Matsuda et al: "A New Process for Fabricating Three-Dimensional Periodic Structures Made of Photo-Resists"Abs.of Materials Research Society 2000 Fall Meeting. E1.6 (2000)
• [文献書誌] Y.Shimamune et al: "Heavily P-doped Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"Abs.of 2000 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures. 76 (2000)
• [文献書誌] J.Murota et al: "Atomically Controlled Processing for Fabrication of Si-based Ultimate-Small Devices"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 131-134 (2000)
• [文献書誌] T.Seino et al: "Influence of Surface Heating due to Plasma Exposure on Atomic-Order Plasma Nitridation of Si"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 223-226 (2000)
• [文献書誌] O.Jintsugawa et al: "Thermal Nitridation of Ultrathin Silicon Dioxide Films Using NH_3 Gas"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 227-230 (2000)
• [文献書誌] T.Watanabe et al: "Nitrogen-Doped Si Epitaxial Growth by Alternately Supplied NH_3 and SiH_4"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 258-261 (2000)
• [文献書誌] M.Fujiu et al: "Surface Reaction of Silane and Methylsilane on Ge(100)"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 262-265 (2000)
• [文献書誌] Y.Shimamune et al: "Very Low-Resistive Si Epitaxial Growth at 450℃ by Alternately Supplied PH_3 and SiH_4"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 266-269 (2000)
• [文献書誌] D.Lee et al: "Epitaxial Growth and Electrical Characteristics of Impurity-Doped Si_<1-x-y>Ge_xC_y on Si(100) by Ultraclean LPCVD"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 270-273 (2000)
• [文献書誌] Y.Yamamoto et al: "Surface Adsorption and Reaction on Si and SiO_2 at Very Low Temperature in a WF_6-SiH_4 Gas System"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 294-297 (2000)
• [文献書誌] T.Tsuchiya et al: "Low-Frequency-Noise and Its Correlation with Transconductance in Si_<1-x>Ge_x Channel pMOSFET"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. II-01 (2001)
• [文献書誌] T.Yamashiro et al: "Fabrication of 0.1um MOSFETs with Super Self-Aligned Ultrashallow Junction Formed by Selective In-Situ Doped Si_<1-x>Ge_x CVD"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. II-07 (2001)
• [文献書誌] A.Fukuchi et al: "Etching Feature Improvement by Side-Wall Protection with B in P-Doped Polysilicon"Abs.of First Int.Workshop on New Group IV(St-Ge-C) Semiconductors. II-11 (2001)
• [文献書誌] Y.Shimamune et al: "Heavy Doping Characteristics in Si Epitaxial Growth at 45O℃ by Alternate Supplies of PH_3 and SiH_4"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. II-12 (2001)
• [文献書誌] Y.Kunii et al: "Development of Ultraclean LPCVD Equipment for SiGe(C) Epitaxial Growth"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. IV-05 (2001)
• [文献書誌] T.Noda et al: "B- and P-Doped SiGe(C) Epitaxial Growth on Si(100) by Ultraclean LPCVD"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. IV-08 (2001)
• [文献書誌] A.Tobioka et al: "Study on Solid-Phase Reactions in Ti/p^+-Si_<1-x-y>Ge_xC_y/Si(100) Contacts"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. IV-03 (2001)
• [文献書誌] T.Seino et al: "Atomic-Order Plasma Nitridation of Si under the Si Surface Cooling"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. VI-18 (2001)
• [文献書誌] M.Fujiu et al: "Self-Limiting Surface Reactiomt of SiH_4 and CH_3SiH_3 on Ge(100)"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. VI-19 (2001)
• [文献書誌] O.Jintsugawa et al: "Thermal Nitridation of Ultrathin Silicon Dioxide Films at 750-850℃ in an NH_3 Environment"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. VI-20 (2001)
• [文献書誌] S.Ishida et al: "Buffered HF Etching Characteristics of Si_<1-x-y>Ge_xC_y Epitaxial Films"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. VI-21 (2001)
• [文献書誌] Y.Nakabayashi et al: "Epitaxial Growth of Pure ^<30>Si Layers on a Natural Si(100) Substrate Using Enriched ^<30>SiH_4"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. VI-25 (2001)
• [文献書誌] T.Sadoh et al: "Improvement of Thermal Stability in In-Situ Doped Poly-SiGe Gate on SiON"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. II-10 (2001)
• [文献書誌] K.W.Koh et al: "Ultrashallow Junction with Elevated SiGe Source/ Drain Fabricated by Laser Induced Atomic Layer Doping"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. II-09 (2001)
• [文献書誌] T.Seino et al: "Side-Wall Protection by B in P-doped Polysilicon in Gate Etching"Proceedings of the Second International Symposium on ULSI Process, 199th Meeting of the Electrochemical Society. (in press). (2001)
• [文献書誌] T.Tsuchiya et al: "Low Frequency Noise in Si_<1-x>Ge_x-Channel pMOSFETs"Proceedings or the Second International Symposium on ULSI Process, 199th Meeting of the Electrochemical Society. (in press). (2001)
• [文献書誌] Y.Shimamune et al: "Epitaxial growth of heavily P-doped Si films at 450℃ by alternately supplied PH_3 and SiH_4"Abs.of the 13th European Conference on Chemical Vapor Deposition. (accepted). (2001)
• [文献書誌] J.Murota: "Atomically Controlled Processing for Group IV Semiconductors"Abs.of the 9th European Conference on Applications of Surface and Interface Analysis. (invited). (2001)
• [文献書誌] S.Kobayashi et al.: "Segregation and Diffusion of Phosphorus from Doped Si_<1-x>Ge_x Films into Silicon"J.Appl.Phys.. 86,10. 5480-5483 (1999)
• [文献書誌] T.Seino et al.: "Contribution of Radicals and lons in Atomic-Order Plasma Nitridation of Si"Appl.Phys.Lett.. 76,3. 342-344 (2000)
• [文献書誌] P.Han et al.: "Observation of Sharp Current Peaks in Resonant Tunneling Diode with Strained Si_<0.6>Ge_<0.4>/Si(100)Grown by Low-Temperature Low-Pressure CVD"J.Crystal Growth. 209,2-3. 315-320 (2000)
• [文献書誌] A.Ichikawa et al.: "Epitaxial Growth of Si_<1-x-y>Ge_xC_y Film on Si(100) in a SiH_4-GeH_4-CH_3SiH_3 Reaction"Thin Solid Films. (accepted).
• [文献書誌] S.Kobayashi et al.: "Diffusion and Segregation of Impurities from Doped Si_<1-x>Ge_x Films Silicon"Thin Solid Films. (accepted).
• [文献書誌] T.Tsuchiya et al.: "Drain Leakage Current and Instability of Drain Current in Si/Si_<1-x>Ge_x MOSFETs"Thin Solid Films. (accepted).
• [文献書誌] J.Murota et al.: "SiGe Processing and its Application in MOS Devices"Abs.of the 1st Microelectronics Workshop. 30-31 (1999)
• [文献書誌] J.Murota et al.: "Atomically Controlled Processing for Si-Based Ultrasmall Devices"Ext.Abs.of 18th Symposium on Future Electron Devices. 65-70 (1999)
• [文献書誌] T.Kikuchi et al.: "Super Self-Aligned Processing for Sub 0.1μm MOS Devices Using Selective Si_<1-x>Ge_x CVD"Proc.of the First International Symposium on ULSI Process Integration. PV99-18. 147-153 (1999)
• [文献書誌] T.Matsuura et al.: "Atomic-Order Side-Wall Passivation with Nitrogen in ECR Plasma Etching of Si"Proc.of the Plasma Etching Processes for Sub-Quarter Micron Devices. PV99-30(in press). (2000)
• [文献書誌] T.Kanetsuna et al.: "Surface Adsorption and Reaction of Chlorine on Impurity Doped Si Using an ECR Plasma"Abs.of 197th Meeting of the Electrochemical Society. (accepted). (2000)
• [文献書誌] Y.Yamamoto et al.: "Surface Adsorption of WF_6 on Si and SiO_2 in Selective W-CVD"Abs.of 197th Meeting of the Electrochemical Society. (accepted). (2000)
• [文献書誌] T.Noda et al.: "Doping and Electrical Characteristics of In Situ Heavily B-Doped Si_<1-x-y>Ge_xC_y Films Epitaxially Growth Using Ultraclean LPCVD"Abs.of 2000 Spring Meeting,The European Materials Research Society. (accepted). (2000)
• [文献書誌] Y.H.Song et al.: "A Novel Atomic Layer Doping Technology for Ultra-shallow Junction in Sub-0.1μm MOSFETs"Abs.of Technical Digest of Internal Electron Devices Meeting 1999. 505-508 (1999)
• [文献書誌] Y.H.Song et al.: "Ultrashallow Junction Formation by Rapid Thermal Annealing of Arsenic-Adsorbed Layer"Jpn.J.Appl.Phys.. 39,Part1,No.1. 26-30 (2000)