高集積通信システム製作のためのSiGe系MOS-HBT技術の開発

• 研究課題/領域番号: 11694123
• 研究種目: 基盤研究(B)
• 配分区分: 補助金
• 応募区分: 一般
• 研究分野: 電子デバイス・機器工学
• 研究機関: 東北大学
• 研究代表者: 室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)
• 研究分担者: 櫻庭 政夫 (桜庭 政夫) 東北大学, 電気通信研究所, 助手 (30271993) ; 松浦 孝 東北大学, 電気通信研究所, 助教授 (60181690) ; 山本 裕司 日本学術振興会, 日本学術振興会・特別研究員
• 研究期間 (年度): 1999 – 2001
• 研究課題ステータス: 完了 (2001年度)
• 配分額: 7,600千円 (直接経費: 7,600千円); 2001年度: 2,400千円 (直接経費: 2,400千円); 2000年度: 2,400千円 (直接経費: 2,400千円); 1999年度: 2,800千円 (直接経費: 2,800千円)
• キーワード: SiGe / MOS / HBT / CVD低温選択成長 / in-situ不純物ドーピング / SiGeC / 不純物拡散 / 高選択異方性エッチング

研究概要

本基盤研究は、低電圧・低消費電力・超高速・大容量移動体通信システムの実現のため、SiGe系のMOSとHBTを集積した、新しい低電圧・低消費電力・超高速・大容量移動体通信用システムオンチップの製作技術を開発することを目的として、ドイツ半導体物理学研究所研究チームとの国際学術研究として3年計画で推進してきた。本年度は、その最終年度として、SiGe系半導体極微細構造の形成(不純物ドープSiGe(C)半導体薄膜形成の超高精度制御の実現とそ定式化、SiGe系半導体極微細構造の高選択異方性エッチング、プロセス原料ガス分子の吸着・反応定数の一覧表への集約、原子層成長制御および原子層プラズマプロセスのデータベース化、Pの原子層ドーピングによる超高濃度半導体の実現、原子オーダ窒化制御と窒素の原子層ドーピングの実現)と、超高速通信用デバイス技術(高精度要素プロセス技術の開発、集積化デバイス制作プロセスの構築、超高速デバイス構造とその製作プロセスの検討、デバイス試作と超高速動作の評価)の基盤研究を実施し、成果を得た。特に、デバイス技術としては、ソース/ドレインに自己整合形成不純物ドープSiGeを用いた0.1ミクロン極微細MOSデバイスのCMOS構成化、SiGeチャネルpMOSFETでの優れた低周波雑音特性の実証、100GHz-HBTのデバイス構造およびプロセス、低抵抗配線コンタクトの製作、CドープによるB、Pの不純物拡散抑制制御など、研究発表論文にも示すように重要な成果を得た。さらに、デバイスへの応用に重要な、SiGe(C)の極微細構造の高精度評価法の開発も行った。

研究成果

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  • 説明: 「研究成果報告書概要(和文)」より
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• [文献書誌] P.Han et al.: "Observation of Sharp Current Peaks in Resonant Tunneling Diode with Strained Si_<0.6>Ge_<0.4>/Si(100) Grown by Low-Temperature Low-Pressure CVD"J.Crystal Growth. Vol.209,No.2-3. 315-320 (2000)
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• [文献書誌] A.Ichikawa et al.: "Epitaxial Growth of Si_<1-x-y>Ge_xC_y Film on Si(100) in a SiH_4-GeH_4CH_3SiH_3 Reaction"Thin Solid Films. Vol.369,No.1-2. 167-170 (2000)
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• [文献書誌] S.Kobayashi et al.: "Segregation and Diffusion of Impurities from Doped Si_<1-x>Ge_x Films into Silicon"Thin Solid Films. Vol.369,No.1-2. 222-225 (2000)
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• [文献書誌] T.Tsuchiya et al.: "Drain Leakage Current and Instability of Drain Current in Si/Si_<1-x>Ge_x MOSFETs"Thin Solid Films. Vol.369,No.1-2. 379-382 (2000)
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  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] Y.Shimamune et al.: "Atomic-Layer Doping in Si by Alternately Supplied PH_3 and SiH_4"Thin Solid Films. Vol.380,No.1-2. 134-136 (2000)
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• [文献書誌] 室田淳一 他: "CVD Si_<1-x>Ge_xエピタキシャル成長とドーピング制御"日本結晶成長学会誌. Vol.27,No.4. 171-178 (2000)
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• [文献書誌] T.Watanabe et al.: "Atomic-Order Thermal Nitridation of Si (100) and Subsequent Growth of Si"J.Vac.Sci.Technol.A. Vol.19,No.4,Part II. 1907-1911 (2001)
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• [文献書誌] D.Lee et al.: "Phosphorus Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH_4-GeH_4-CH_3SiH_3-PH_3-H_2 Gas System"Jpn.J.Appl.Phys.. Vol.40,Part 1. 2697-2700 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] T.Kanetsuna et al.: "Surface Adsorption and Reaction of Chlorine on Impurity-Doped Single Crystalline Si Using Electron Cyclotron Resonance Plasma"J.Electrochem.Soc.. Vol.148,No.8. G420-G423 (2001)
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• [文献書誌] 室田淳一 他: "CVD法によるSi_<1-x-y>Ge_xC_yエピタキシャル成長とドーピング制御"応用物理学会誌. 第70巻,第9号. 1082-1086 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] Y.Shimamune et al.: "Epitaxial Growth of Heavily P-doped Si Films at 450℃ by Alternately Supplied PH_3 and SiH_4"J.Phys.IV France. Vol.11,Pr3. 255-260 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] T.Tsuchiya et al.: "Low-Frequency Noise in Si_<1-x>Ge_x p-Channel Metal Oxide Semiconductor Field-Effect Transistors"Jpn.J.Appl.Phys.. Vol.40,Part 1. 5290-5293 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction in MOSFETs Using Selective Si_<1-x>Ge_x CVD"Materials Science and Engineering B. Vol.89,Issues 1-3. 120-124 (2002)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] M.Sakuraba et al.: "Surface Termination of the Ge(100) and Si(100) Surfaces by Using DHF Solution Dipping"Proc.of 1998 Fall Meeting, Materials Research Society. Vol.535. 281-286 (1999)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] S.Kobayashi et al.: "Phosphorus Diffusion from Doped Si_<1-x>Ge_x Film into Silicon"1999 Spring Meeting, Materials Research Society. 301-302 (1999)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] J.Murota et al.: "In-Situ Doping in CVD Epitaxial Si_<1-x>Ge_x Heavy-Doping and Electrical Characteristics"1999 Spring Meeting, Materials Research Society. 328-329 (1999)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] J.Murota et al.: "High Quality Si_<1-x>Ge_x Epitaxial Growth by CVD (Invited Paper)"Proceedings of the Third International Symposium on Defects in Silicon. Vol.PV99-1. 189-202 (1999)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] T.Seino et al.: "Radical-and Ion-Induced Reactions in Atomic-Order Plasma Nitridation of Si"1999 Spring Meeting, The European Materials Research Society. D-P7 (1999)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] H.Takeuchi et al.: "Etching of Si_<1-x>Ge_x Epitaxial Films Using an ECR Chlorine Plasma"1999 Spring Meeting, The European Materials Research Society. D-III2 (1999)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] J.Murota: "Atomi Order Adsorption and Reaction of CVD Hydride Gases on the Si and Ge Surfaces"The 5th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures. 19 (1999)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] T.Takatsuka et al.: "Atomic-Order Surface Reaction of CH_3SiH_3 on Ge(100) and Si(100)"The 5th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures. 20 (1999)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] Y.Shimamune et al.: "Atomic-Layer Adsorption of P on Si(100) and Ge(100) by PH_3 Using an Ultraclean Low-Pressure Chemical Vapor Deposition"The 5th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures. 37 (1999)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] P.Han et al.: "C Introduced Si_<1-x>Ge_x/Si Resonant Tunneling Diodes Epitaxially Grown Using Low-Temperature Low-Pressure CVD"Int.Joint Conf.on Si Epitaxy and Heterostructures. J-4 (1999)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] S.Ishida et al.: "Micro-Roughness Control of the Si_<1-x>Ge_x Surfaces Treated with Buffered Hydrofluoric Acid"Int.Joint Conf.on Si Epitaxy and Heterostructures. I-2 (1999)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] J.Murota et al.: "CVD Si_<1-x>Ge_x Epitaxial Growth and Its Application to MOS Devices (Invited paper)"Proceedings of the SPIE Conference on Microelectronic Device Technology III, The International Society for Optical Engineering. Vol.3881. 33-45 (1999)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] J.Murota et al.: "SiGe Processing and its Application to MOS Devices (Invited paper)"The 1st Microelectronics Workshop. 30-31 (1999)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] J.Murota et al.: "Atomically Controlled Processing for Si-Based Ultrasmall Devices (In ited paper)"Extended Abstracts of 18th Symposium on Future Electron Devices. 65-70 (1999)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] T.Kikuchi et al.: "Super Self-Aligned Processing for Sub 0.1μm MOS Devices Using Selective Si_<1-x>Ge_x CVD"Proceedings of the First International Symposium on ULSI Process Integration. PV99-18. 147-153 (1999)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] T.Matsuura et al.: "Atomic-Order Side-Wall Passivation with Nitrogen in ECR Plasma Etching of Si"Proceedings of the Plasma Etching Processes for Sub-Quarter Micron Devices. PV99-30. 220-225 (1999)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] T.Kanetsuna et al.: "Surface Adsorption and Reaction of Chlorine on Impurity Doped Si Using an ECR Plasma"Proceedings of the Plasma Processing XIII. 251-256 (1999)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] Y.Shimamune et al.: "Atomic-Layer Doping in Si by Alternately Supplied PH_3 and SiH_4"2000 Spring Meeting, The European Materials Research Society. F-IV.3 (2000)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] T.Noda et al.: "Doping and Electrical Cheracteristics of in Situ Heavily B-Doped Si_<1-x-y>Ge_xC-y Films Epitaxially Grown Using Ultraclean LPCVD"2000 Spring Meeting, The European Materials Research Society. F-II.6 (2000)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] Y.Yamamoto et al.: "Surface Adsorption of WF_6 on Si and SiO_2 in Selective W-CVD"proceedingsof the 15th International Conference on Chemical Vapor Deposition : CVD XV. No.928 (2000)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] D.Lee et al.: "In-Situ Impurity Doping in S_<il-x-y>Ge_xC_y Epitaxial Growth Using Ultraclean LPCVD"2000 International Conference on Solid State Devices and Materials. 206-207 (2000)
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• [文献書誌] M.Fujiu et al.: "Thermal Stability of Si and C Atomic Layers Formed on Ge(100) in Silane and Methylsilane Reactions"American Vacuum Society 47th International Symposium : Vacuum Thin Films, Surfaces/Interfaces, Processing & NANO-6. (TF-MoM4). 15 (2000)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] O.Jintsugawa et al.: "Thermal Nitridation of Ultrathin Silicon Dioxide Films Using NH_3 Gas"American Vacuum Society 47th International Symposium : Vacuum Thin Films, Surfaces/Interfaces, Processing & NANO-6. (SC1+EL+SS-Mo M4). 8 (2000)
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• [文献書誌] J.Murota et al.: "Atomically Controlled Processing for Fabrication of Si-based Ultimate-Small Devices"Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 131-134 (2000)
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• [文献書誌] M.Fujiu et al.: "Surface Reaction of Silane and Methylsilane on Ge(100)"Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 262-265 (2000)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] D.Lee et al.: "Epitaxial Growth and Electrical Characteristics of Impurity-Doped Si_<1-x-y>Ge_xC_y on Si(100) by Ultraclean LPCVD"Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 270-273 (2000)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] Y.Yamamoto et al.: "Surface Adsorption and Reaction on Si and SiO_2 at Very Low Temperature in a WF_6-SiH_4 Gas System"Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 294-297 (2000)
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• [文献書誌] B.Tillack et al.: "SiGe : C Epitaxy for HBT Applications, (Invited paper)"First International Workshop on New Group IV (Si-Ge-C) Semiconductors : Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices. No.III-01 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] D.Knoll et al.: "Investigation of Epitaxy Loading and Geomery Effects in an 8-Inch SiGe : C BICMOS Technology"First International Workshop on New Group IV (Si-Ge-C) Semiconductors : Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices. IV-04 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] J.Murota et al.: "Atomically Controlled Processing for Group IV Semiconductors, (Keynote Lecture)"9th European Conference on Applications of Surface and Interface Analysis (SIA). (No.MO-KL-MOE). 20 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] Y.Shimamune et al.: "Doping and Electrical Characteristics of Si Films Eptaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"2001 Spring Meeting, The European Materials Research Society. (No.D-X3). (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] M.Fujiu et al.: "Influence of Carbon on Thermal Stability of Silicon Atomic Layer Formed on Ge(100)"2001 Spring Meeting, The European Materials Research Society. (No.D-VIII). 9 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction MOSFETs Using Selective Si_<1-x>Ge_x"2001 Spring Meeting, The European Materials Research Society. (D-V). 20 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] J.Murota et al.: "Atomically Precise Control of Heterointerfaces for High-Performance SiGe-Based Heterodevices"2001 Advanced Research Workshop, Future Trends in Miroelectronics : The Nano Millennium. 51 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] Y.Shimamune et al.: "Epitaxial Growth of Heavily P-doped Si Films at 450℃ by Alternately Supplied PH_3 and SiH_4"13th European Conference on Chemical Vapor Deposition. pr3. 255-260 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] J.Murota et al.: "Atomically Controlled Processing for Group IV Semiconductors, (Keynote Lecture)"9th European Conference on Applications of Surface and Interface Analysis. (No.MO-KL-MOE). 20 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] T.Seino et al.: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"9th European Conference on Applications of Surface and Interface Analysis. (No.MO-P-MOE 07). 193 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] O.Jintsugawa et al.: "Thermal Nitridation of Ultrathin SiO_2 on Si by NH_3"9th European Conference on Applications of Surface and Interface Analysis. (No.MO-P-MOE 08). 194 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] J.Murota et al.: "CVD SiGe(C) Epitaxial Growth and Its Application to MOS Devices (Invited Paper)"The Sixth International Conference on Solid-State and Integrated-Circuit Technology. Vol.1. 525-530 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] T.Seino et al.: "Atomic-Order Plasma Nitridation of Ultrathin Silicon Dioxide Films"American Vacuum Society 48th International Symposium. (PS-MoP10). 53 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] Y.Hashiba et al.: "Growth Characteristics of Si_<1-x-y>Ge_xC_y on Si(100) and SiO_2 in Ultraclean Low-Temperature LPCVD"American Vacuum Society 48th International Symposium. (SS-SC-TuP2). 135 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] D.Muto et al.: "Self-Limited Layer-by-Layer Growth of Si by Alternated SiH_4 Supply and Ar Plasma Exposure"American Vacuum Society 48th International Symposium. (EL-WeA3). 179 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] T.Matsuura et al.: "Application of Photosensitive Methylsilsesquiazane(MSZ) to Lithographic Fabrication of Three Dimensional Periodic Structures"American Vacuum Society 48th International Symposium. (PH-ThA7). 229 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] Y.C.Jeong et al.: "Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH_4 Reaction"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. (Abs). 83-84 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] Y.Shimamune et al.: "Heavy Doping Characteristics of Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. 85-86 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] D.Kruger et al.: "Transient Processes and Structural Transformations in Si and Si_xGe_<1-x> Layers During Oxygen Implantation and Sputtering"13th International Conference on Secondary Ion Mass Spectrometry and Related Topics. (AA1). 108 (2001)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] 室田淳一 他: "「半導体結晶成長」Si-Ge系のCVDエピタキシー原子層成長制御 第2章"大野英男編著、コロナ社. 19-42 (1999)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] J.Murota et al.: "In"Future Trends in Microelectronics",Edited by S.Luryi, J.Xu and A.Zaslavsky, John Wiley & Sons, Inc"Process Technology for Sub-0.1μm Silicon Devices. 79-90 (1999)
  • 説明: 「研究成果報告書概要(和文)」より
• [文献書誌] A. Moriya et al.: "Doping and Electrical Characteristics of In Situ Heavily B-Doped Si_<1-x>Ge_x Films Epitaxially Grown Using Ultraclean LPCVD"Thin Solid Films. Vol. 343-344. 541-544 (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Matsuura et al.: "Atomic-Order Layer-by-Layer Role-Share Etching of Silicon Nitride Using an Electron Cyclotron Resonance Plasma"Appl. Phys. Lett.. Vol. 74, No. 23. 3573-3575 (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Watanabe et al.: "Layer-by-Layer Growth of Silicon Nitride Films by NH_3 and SiH_4"J. Phys. IV France. Vol. 9. Pr8-333-Pr8-340 (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] Y. Yamamoto et al.: "H-Termination Effects on Initial Growth Characteristics of W on Si Using WF_6 and SiH_4 Gases"J. Phys. IV France. Vol. 9. Pr8-431-Pr8-436 (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] S. Kobayashi et al.: "Segregation and Diffusion of Phosphorus from Doped Si_<1-x>Ge_x Films into Silicon"J. Appl. Phys.. Vol. 86, No. 10. 5480-5483 (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Seino et al.: "Contribution of Radicals and Ions in Atomic-Order Plasma Nitridation of Si"Appl. Phys. Lett.. Vol. 76, No. 3. 342-344 (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] P. Han et al.: "Observation of Sharp Current Peaks in Resonant Tunneling Diode with Strained Si_<0.6>Ge_<0.4>/Si(100) Grown by Low-Temperature Low-Pressure CVD"J. Crystal Growth. Vol. 209, No. 2-3. 315-320 (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] Y. Shimamune et al.: "Atomic-Layer Adsorption of P on Si(100) and Ge(100) by PH_3 Using an Ultraclean Low-Pressure Chemical Vapor Deposition"Appl. Surf. Sci.. Vol. 162-163. 390-394 (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] A. Ichikawa et al.: "Epitaxial Growth of Si_<1-x-y>Ge_xC_y Film on Si(100) in a SiH_4-GeH_4-CH_3SiH_3 Reaction"Thin Solid Films. Vol. 369, No. 1-2. 167-170 (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] S. Kobayashi et al.: "Segregation and Diffusion of Impurities from Doped Si_<1-x>Ge_x Films into Silicon"Thin Solid Films. Vol. 369, NO. 1-2. 222-225 (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Tsuchiya et al.: "Drain Leakage Current and Instability of Drain Current in Si/Si_<1-x>Ge_x MOSFETs"Thin Solid Films. Vol. 369, No. 1-2. 379-382 (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Takatsuka et al.: "Surface Reaction of CH_3SiH_3 on Ge(100) and Si(100)"Appl. Surf. Sci.. Vol. 162-163. 156-160 (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Noda et al.: "Doping and Electrical Characteristics of In-Situ Heavily B-Doped Si_<1-x-y>Ge_xC_y Films Epitaxially Grown Using Ultraclean LPCVD"Thin Solid Films. Vol. 380, No. 1-2. 57-60 (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] Y. Shimamune et al.: "Atomic-Layer Doping in Si by Alternately Supplied PH_3 and SiH_4"Thin Solid Films. Vol. 380, No. 1-2. 134-136 (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] J. Murota et al.: "CVD Si_<1-x>Ge_x Epitaxial Growth and Doping Control"Jpn. J. Cristal Growth. Vol. 27, No. 4. 171-178 (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Watanabe et al.: "Atomic-Order Thermal Nitridation of Si (100) and Subsequent Growth of Si"J. Vac. Sci. Technol. A. Vol. 19, No. 4, Part II. 1907-1911 (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] D. Lee et al.: "Phosphorus Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH_4GeH_4-CH_3SiH_3-PH_3-H_2 Gas System"Jpn. J. Appl. Phys.. Vol. 40, No. 4B. 2697-2700 (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Kanetsuna et al.: "Surface Adsorption and Reaction of Chlorine on Impurity-Doped Single Crystalline Si Using Electron Cyclotron Resonance Plasma"J. Electrochem. Soc.. Vol. 148, No. 8. G420-G423 (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] J. Murota et al.: "Si_<1-x-y>Ge_xC_y Epitaxial Growth and Doping Control by CVD"Jpn. J. Appl. Phys.. Vol. 70, No. 9. 1082-1086 (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] Y. Shimamune et al.: "Epitaxial Growth of Heavily P-doped Si Films at 450℃ by Alternately Supplied PH_3 and SiH_4"J. Phys. IV France. Vol. 11, Pr3. 255-260 (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction in MOSFETs Using Selective Si_<1-x>Ge_x CVD"Materials Science and Engineering B. Vol. 89, Issues 1-3. 120-124 (2002)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] M. Sakuraba et al.: "Surface Termination of the Ge(100) and Si(100) Surfaces by Using DHF Solution Dipping"1998 Fall Meeting, Materials Research Society, Symposium I (III-V and SiGe Group IV Device/IC Processing Challenges for Commercial Applications), Boston, Massachusetts, Nov. 30-Dec. 4. (1998)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] M. Sakuraba et al.: "Surface Termination of the Ge(100) and Si(100) Surfaces by Using DHF Solution Dipping"Mat. Res. Soc. Symp. Proc.. Vol. 535. 281-286 (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] S. Kobayashi et al.: "Phosphorus Diffusion from Doped Si_<1-x>Ge_x Film into Silicon"1999 Spring Meeting, Materials Research Society, San Francisco, California, Apr. 5-9. Abs. No. S9.2. 301-302 (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] J. Murota et al.: "In-Situ Doping in CVD Epitaxial Si_<1-x>Ge_x Heavy-Doping and Electrical Characteristics"1999 Spring Meeting, Materials Research Society, San Francisco, California, Apr. 5-9. Abs. No. V2.3. 328-329 (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] J. Murota et al.: "High Quality Si_<1-x>Ge_x Epitaxial Growth by CVD (Invited Paper)V"Edited by T. Abe, W. M. Bullis, S. Kobayashi, W. Lin and P. Wagner, Proceedings of the Third International Symposium on Defects in Silicon, (The Electrochemical Society, Pennington, NJ, 1999). Vol. PV99-1. 189-202 (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] J. Murota et al.: "High Quality Si_<1-x>Ge_x Epitaxial Growth by CVD (Invited Paper)V"195th Meeting of The Electrochemical Society, Seattle, Washington, May 2-6. Abs. No. 332. (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Seino et al.: "Radical- and Ion-Induced Reactions in Atomic-Order Plasma Nitridation of Si"1999 Spring Meeting, The European Materials Research Society (E-MRS), Strasbourg, France, Jun. 1-4. Abs. No. D/P7. (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] H. Takeuchi et al.: "Etching of Si_<1-x>Ge_x Epitaxial Films Using an ECR Chlorine Plasma"1999 Spring Meeting, The European Materials Research Society (E-MRS), Strasbourg, France, Jun. 1-4. Abs. No. D-III.2. (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] J. Murota: "Atomic Order Adsorption and Reaction of CVD Hydride Gases on the Si and Ge Surfaces"The 5th International Conference on Atomically t Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5), Provence, France, Jul. 6-9. Abs. No. P19. (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Takatsuka et al.: "Atomic-Order Surface Reaction of CH_3SiH_3 on Ge(100) and Si(100)"The 5th International Conference on Atomically t Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5), Provence, France, Jul. 6-9. Abs. No. P20. (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] Y. Shimamune et al.: "Atomic-Layer Adsorption of P on Si(100) and Ge(100) by PH_3 Using an Ultraclean Low-Pressure Chemical Vapor Deposition"The 5th International Conference on Atomically t Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5), Provence, France, Jul. 6-9. Abs. No. P37. (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] P. Han et al.: "C Introduced Si_<1-x>Ge_x/Si Resonant Tunneling Diodes Epitaxially Grown Using Low-Temperature Low-Pressure CVD"Int. Joint Conf. on Si Epitaxy and Heterostructures (IJC-Si), Zao, Japan, Sep. 12-17. Abs. No. J-4. (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] S. Ishida, et al.: "Micro Roughness Control of the Si_<1-x>Ge_x Surfaces Treated with Buffered Hydrofluoric Acid"Int. Joint Conf. on Si Epitaxy and Heterostuctures (IJC-Si), Zao, Japan, Sep. 12-17. Abs. No. P I-2. (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] J. Murota et al.: "CVD Si_<1-x>Ge_x Epitaxial Growth and Its Application to MOS Devices (Invited paper)"Proceedings of the SPIE Conference on Microelectronic Device Technology III, The International Society for Optical Engineering, Santa Clara, California, Sep. 22-23, 1999. Vol. 3881. 33-45 (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] J. Murota et al.: "SiGe Processing and its Application to MOS Devices (Invited paper)"The 1st Microelectronics Workshop, Seoul, Korea, Oct. 12-14. 30-31 (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] J. Murota et al.: "Atomically Controlled Processing for Si-Based Ultrasmall Devices (Invited paper)"Extended Abstracts of 18th Symposium on Future Electron Devices, Tokyo, Oct. 20-21. 65-70 (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Kikuchi et al.: "Super Self-Aligned Processing for Sub 0.1μm MOS Devices Using Selective Si_<1-x>Ge_x CVD"Proceedings of the First International Symposium on ULSI Process Integration, (C.L. Claeys, H. Iwai, G. Bronner and R. Fair eds., The Electrochemical Society, Pennington, NJ, 1999). Vol. PV99-18. 147-153
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Kikuchi et al.: "Super Self-Aligned Processing for Sub 0.1μm MOS Devices Using Selective Si_<1-x>Ge_x CVD"196th Meeting of the Electrochemical Society, Honolulu, Hawaii, Oct.17-22. Abs. No. 1334. (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Matsuura et al.: "Atomic-Order Side-Wall Passivation with Nitrogen in ECR Plasma Etching of Si"Proceedings of the Plasma Etching Processes for Sub-Quarter Micron Devices, (D. W. Hess, Y. Horiike, T. Lii, G. S. Mathad, D. Misra and L. Simpson eds., The Electrochemical Society, Pennington, NJ, 1999). Vol. PV99-30. 220-225
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Matsuura et al.: "Atomic-Order Side-Wall Passivation with Nitrogen in ECR Plasma Etching of Si"196th Meeting of the Electrochemical Society, Honolulu, Hawaii, Oct.17-22. Abs. No. 691. (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Kanetsuna et al.: "Surface Adsorption and Reaction of Chlorine on Impurity Doped Si Using an ECR Plasma"Proceedings of the Plasma Processing XIII, (G.S. Mathad, D. W. Hess, M. Meyyappan, M. Yang and G. K. Celler eds., The Electrochemical Society, Pennington, NJ, 2000). 251-256 (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Kanetsuna et al.: "Surface Adsorption and Reaction of Chlorine on Impurity Doped Si Using an ECR Plasma"197th Meeting of the Electrochemical Society, Toronto, Canada, May 14-18. Abs. No. 294. (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] Y, Shimamune et al.: "Atomic-Layer Doping in Si by Alternately Supplied PH_3 and SiH_4"2000 Spring Meeting, The European Materials Research Society (E-MRS), Strasbourg, France, May 30-Jun. 2. Abs. No. F-IV.3. (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Noda et al.: "Doping and Electrical Characteristics of In Situ Heavily B-Doped Si_<1-x-y>Ge_xC_y Films Epitaxially Grown Using Ultraclean LPCVD"2000 Spring Meeting, The European Materials Research Society (E-MRS), Strasbourg, France, May 30-Jun. 2. Abs. No. F-II.6. (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] Y. Yamamoto et al.: "Surface Adsorption of WF_6 on Si and SiO_2 in Selective W-CVD"Proceedings of the 15th International Conference on Chemical Vapor Deposition: CVD XV, (M. D. Allendorf, T. M. Bessman, M. L. Hitchman, M. Robinson, Y. Shimogaki, F. Teyssandier, and R. K. Ulrich eds., The Electrochemical Society, Pennington. NJ, 2000). Vol. PV2000-13.
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] Y. Yamamoto et al.: "Surface Adsorption of WF_6 on Si and SiO_2 in Selective W-CVD"197th Meeting of the Electrochemical Society, Toronto, Canada, May14- 18. Abs. No. 928. (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] D. Lee et al.: "In-Situ Impurity Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth Using Ultraclean LPCVD"2000 International Conference on Solid State Devices and Materials (SSDM2000), Sendai, Japan, Aug. 29-31. 206-207 (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] M. Fujiu et al.: "Thermal Stability of Si and C Atomic Layers Formed on Ge(100) in Silane and Methylsilane Reactions"American Vacuum Society 47th International Symposium: Vacuum Thin Films, Surfaces/Interfaces, Processing & NANO-6, Boston, Massachusetts, Oct. 2-6. Abs. No. TF-MoM4. 15 (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] B. Tillack: "Atomic Layer Doping of SiGe for Heterojunction Devices (Invited Paper)"Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop), 2nd International Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Ise-Shima Royal Hotel, Mie, Japan, Nov. 19-24. 27-30 (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] J. Murota et al.: "Atomically Controlled Processing for Fabrication of Si-based Ultimate-Small Devices"Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop), 2nd International Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Ise-Shima Royal Hotel, Mie, Japan, Nov. 19-24. 131-134 (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] O. Jintsugawa et al.: "Thermal Nitridation of Ultrathin Silicon Dioxide Films Using NH_3 Gas"American Vacuum Society 47th International Symposium: Vacuum Thin Films, Surfaces/Interfaces, Processing & NANO-6, Boston, Massachusetts, Oct. 2-6. Abs. No. SC1+EL+SS-MoM4. 8 (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] M. Fujiu et al.: "Surface Reaction of Silane and Methylsilane on Ge(100)"Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop), 2nd International Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Ise-Shima Royal Hotel, Mie, Japan, Nov. 19-24. 262-265 (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] D. Lee et al.: "Epitaxial Growth and Electrical Characteristics of Imouritv-Doped Si_<1-x-y>Ge_xC_y on Si(100) by Ultraclean LPCVD"Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop), 2nd International Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Ise-Shima Royal Hotel, Mie, Japan, Nov. 19-24. 270-273 (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] Y. Yamamoto et al.: "Surface Adsorption and Reaction on Si and SiO_2 at Very Low Temperature in a WF_6-SiH_4 Gas System"Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop), 2nd International Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Ise-Shima Royal Hotel, Mie, Japan, Nov. 19-24. 294-297 (2000)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Yamashiro et al.: "Fabrication of 0.1 μm MOSFETs with Super Self-Aligned Ultrashallow Junction Formed by Selective In-Situ Doped Si_<1-x>Ge_x CVD"First International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Sendai, Japan, Jan. 21-23. Abs. No. PII-07. 21-23 (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] B. Tillack et al.: "SiGe:C Epitaxy for HBT Applications (Invited paper)"First International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Sendai, Japan, Jan. 21-23. Abs. No. III-01. 21-23 (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] D. Knoll et al.: "Investigation of Epitaxy Loading and Geometry Effects in 8-Inch SiGe:C BiCMOS Technology"First International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Sendai, Japan, Jan. 21-23. Abs. No. IV-04. 21-23 (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] J. Murota et al.: "Atomically Controlled Processing for Group IV Semiconductors, (Keynote Lecture)"9th European Conference on Applications of Surface and Interface Analysis (SIA), Avignon, France, Sep. 30-Oct. 5. Abs. No. MO-KL-MOE. 20 (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] Y. Shimamune et al.: "Doping and Electrical Characteristics of Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"2001 Spring Meeting, The European Materials Research Society, Strasbourg, France, Jun. 5-8. Abs. No. D-X, 3. (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] M. Fujiu et al.: "Influence of Carbon on Thermal Stability of Silicon Atomic Layer Formed on Ge(100)"2001 Spring Meeting, The European Materials Research Society, Strasbourg, France, Jun. 5-8. Abs. No. D-VIII/P9. (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction MOSFETs Using Selective Si_<1-x>Ge_x"2001 Spring Meeting, The European Materials Research Society, Strasbourg, France, Jun. 5-8. Abs. No. D=V/P20. (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] J. Murota et al.: "Atomically Precise Control of Heterointerfaces for High-Performance SiGe-Based Heterodevices"2001 Advanced Research Workshop, Future Trends in Microelectronics: The Nano Millennium, Ile de Bendor, France, Jun. 25-29. 51 (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] Y. Shimamune et al.: "Epitaxial Growth of Heavily P-doped Si Films at 450℃ by Alternately Supplied PH_3 and SiH_4"13th European Conference on Chemical Vapor Deposition, Glyfada, Athens, Greece, Aug. 26-31. pr3. 255-260 (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] J. Murota et al.: "Atomically Controlled Processing for Group IV Semiconductors, (Keynote Lecture)"9th European Conference on Applications of Surface and Interface Analysis (SIA), Avignon, France, Sep. 30-Oct. 5. Abs. No. MO-KL-MOE. 20 (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Seino et al.: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"9th European Conference on Applications of Surface and Interface Analysis (SIA), Avignon, France, Sep. 30-Oct. 5. Abs. No. MO-P-MOE07. 193
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] O. Jintsugawa et al.: "Thermal Nitridation of Ultrathin SiO_2 on Si by NH_3"9th European Conference on Applications of Surface and Interface Analysis (SIA), Avignon, France, Sep. 30-Oct. 5. Abs. No. MO-P-MOE 08. 194
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] J. Murota et al.: "CVD SiGe(C) Epitaxial Growth and Its Application to MOS Devices (Invited Paper)"The Sixth International Conference on Solid-State and Integrated-Circuit Technology, Oct. 22-25, 2001, Shanghai, China. Vol. 1. 525-530
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Seino et al.: "Atomic-Order Plasma Nitridation of Ultrathin Silicon Dioxide Films"AVS 48th International Symposium, San Francisco, California, Oct. 29-Nov. 2. PS-MoP10. 53 (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] Y. Hashiba et al.: "Growth Characteristics of Si_<1-x-y>Ge_xC_y on Si(100) and Si0_2 in Ultraclean Low-Temperature LPCVD"AVS 48th International Symposium, San Francisco, California, Oct. 29-Nov. 2. SS-SC-TuP2. 135 (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] D. Muto et al.: "Self-Limited Layer-by-Layer Growth of Si by Alternated SiH_4 Supply and Ar Plasma Exposure"AVS 48th International Symposium, San Francisco, California, Oct. 29-Nov. 2. EL-WeA3. 179 (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T. Matsuura et al.: "Application of Photosensitive Methylsilsesquiazane(MSZ) to Lithographic Fabrication of Three Dimensional Periodic Structures"AVS 48th International Symposium, San Francisco, California, Oct. 29-Nov. 2. PH-ThA7. 229 (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] Y. C. Jeong et al.: "Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH_4 Reaction"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices, Ise-Shima Royal Hotel, Mie, Japan, Nov. 14-16. Abs. 8.3. (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] Y. Shimamune et al.: "Heavy Doping Characteristics of Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices, Ise-Shima Royal Hotel, Mie, Japan, Nov. 14-16. Abs. 8.4. (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] D. Kruger et al.: "Transient Processes and Structural Transformations in Si and Si_xGe_<1-x> Layers During Oxygen Implantation and Sputtering"13th International Conference on Secondary Ion Mass Spectrometry and Related Topics (SIMS XIII), Nara, Japan, Nov. 11-16. AA1. 108 (2001)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] J. Murota et al.: "CVD Epitaxy and Atomic Layer Growth Control of Si-Ge System"Book of Semiconductor Crystal Growth, Hideo Ono, Corona Co., Chapter 2. 19-42 (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] J. Murota et al.: "Process Technology for Sub-0.1μm Silicon Devices"In "Future Trends in Microelectronics", Edited by S. Luryi, J. Xu and A. Zaslavsky, John Wiley & Sons, Inc.. 79-90 (1999)
  • 説明: 「研究成果報告書概要(欧文)」より
• [文献書誌] T.Watanabe et al.: "Atomic-Order Thermal Nitridation of Si (100) and Subsequent Growth of Si"J. Vac. Sci. Technol. A.. Vol.19,No.4,PartII. 1907-1911 (2001)
• [文献書誌] D.Lee et al.: "Phosphorus Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH_4-GeH_4-CH_3SiH_3-PH_3-H_2 Gas System"Jpn. J. Appl. Phys. Vol.40,Part1. 2697-2700 (2001)
• [文献書誌] T.Kanetsuna et al.: "Surface Adsorption and Reaction of Chlorine on Impurity-Doped Single Crystalline Si Using Electron Cyclotron Resonance Plasma"J. Electrochem. Soc.. Vol.148,No.8. G420-G423 (2001)
• [文献書誌] 室田淳一他: "CVD法によるSi_<1-x-y>Ge_xC_yエピタキシャル成長とドーピング制御"応用物理学会誌. 第70巻,第9号. 1082-1086 (2001)
• [文献書誌] Y.Shimamune et al.: "Epitaxial Growth of Heavily P-doped Si Films at 450℃ by Alternately Supplied PH_3 and SiH_4"J.Phys.IV France.. Vol.11,Pr3. 255-260 (2001)
• [文献書誌] T.Tsuchiya et al.: "Low-Frequency Noise in Si_<1-x>Ge_xp-Channel Metal Oxide Semiconductor Field-Effect Transistors"Jpn. J. Appl. Phys.. Vol.40,Part1. 5290-5293 (2001)
• [文献書誌] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction in MOSFETs Using Selective Si_<1-x>Ge_x CVD"Materials Science and Engineering B. Vol.89,Issues1-3. 120-124 (2002)
• [文献書誌] Y.Shimamune et al.: "Doping and Electrical Characteristics of Si Films Eptaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"2001 Spring Meeting, The European Materials Research Society, Strasburg, France. D-X,3 (2001)
• [文献書誌] M.Fujiu et al.: "Influence of Carbon on Thermal Stability of Silicon Atomic Layer Formed on Ge(100)"2001 Spring Meeting, The European Materials Research Society. D-VIII/P9 (2001)
• [文献書誌] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction MOSFETs Using Selective Si_<1-x> Ge_x"2001 Spring Meeting, The European Materials Research Society. D-V/P20 (2001)
• [文献書誌] J.Murota et al.: "Atomically Precise Control of Heterointerfaces for High-Performance SiGe-Based Heterodevices"2001 Advanced Research Workshop, Future Trends in Microelectronics. p51 (2001)
• [文献書誌] J.Murota et al.: "Atomically Controlled Processing for Group IV Semiconductors(Keynote Lecture)"9th European Conference on Applications of Surface and Interface Analysis(SIA). 20 (2001)
• [文献書誌] T.Seino: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"9th European Conference on Applications of Surface and Interface Analysis(SIA). 193 (2001)
• [文献書誌] O.Jintsugawa et al.: "Thermal Nitridation of Ultrathin SiO_2 on Si by NH_3"9th European Conference on Applications of Surface and Interface Analysis(SIA). 194 (2001)
• [文献書誌] J.Murota et al.: "CVD SiGe(C) Epitaxial Growth and Its Application to MOS Devices(Invited Paper)"The Sixth International Conference on Solid-State and Integrated-Circuit Technology. 525-530 (2001)
• [文献書誌] T.Seino et al.: "Atomic-Order Plasma Nitridation of Ultrathin Silicon Dioxide Films"AVS 48th International Symposium. 53 (2001)
• [文献書誌] Y.Hashiba: "Growth Characteristics of Si_<1-x-y>Ge_xC_y on Si(100) and SiO_2 in Ultraclean Low-Temperature LPCVD"AVS 48th International Symposium. 135 (2001)
• [文献書誌] D.Muto. et al.: "Self-Limited Layer-by-Layer Growth of Si by Alternated SiH_4 Supply and Ar Plasma Exposure"AVS 48th International Symposium. 179 (2001)
• [文献書誌] T.Matsuura et al.: "Application of Photosensitive Methylsilsesquiazane(MSZ) to Lithographic Fabrication of Three Dimensional Periodic Structures"AVS 48th International Symposium. 229 (2001)
• [文献書誌] Y.C.Jeong et al.: "Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH_4 Reaction"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.8.3 (2001)
• [文献書誌] Y.Shimamune et al.: "Heavy Doping Characteristics of Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.8.4 (2001)
• [文献書誌] D.Kruger et al.: "Transient Processes and Structural Transformations in Si and Si_xGe_<1-x> Layers During Oxygen Implantation and Sputtering"13th International Conference on Secondary Ion Mass Spectrometry and Related Topics(SIMS XIII). 108 (2001)
• [文献書誌] T.Takatsuka et al: "Surface Reaction of CH_3SiH_3 on Ge(100) and Si(100)"Appl.Surf.Sci.. Vol.162-163. 156-160 (2000)
• [文献書誌] Y.Shimamune et al: "Atomic-Layer Adsorption of P on Si(100) and Ge(100) by PH_3 Using an Ultraclean Low-Pressure Chemical Vapor Deposition"Appl.Surf.Sci.. Vol.162-163. 390-394 (2000)
• [文献書誌] A.Ichikawa et al: "Epitaxial Growth of Si_<1-x-y>Ge_xC_y Film on Si(100) in a SiH_4-GeH_4-CH_3SiH_3 Reaction"Thin Solid Films. Vol.369,No.1-2. 167-170 (2000)
• [文献書誌] T.Tsuchiya et al: "Drain Leakage Current and Instability of Drain Current in Si/Si_<1-x>Ge_x MOSFETs "Thin Solid Films. Vol.369,No.1-2. 379-382 (2000)
• [文献書誌] T.Noda et al: "Doping and Electrical Characteristics of in-situ Heavily B-Doped Si_<1-x-y>Ge_xC_y Films Epitaxially Grown Using Ultraclean LPCVD"Thin Solid Films. Vol.380. 57-60 (2000)
• [文献書誌] Y.Shimamune et al: "Atomic-Layer Doping in Si by Alternately Supplied PH_3 and SiH_4"Thin Solid Films. Vol.380. 134-136 (2000)
• [文献書誌] 室田淳一 他: "CVDSi_<1-x>Ge_xエピタキシャル成長とドーピング制御"日本結晶成長学会誌. Vol.27,No.4. 171-178 (2000)
• [文献書誌] D.Lee et al: "Phosphorus Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH_4-GeH_4-CH_3SiH_3-PH_3-H_2 Gas System"Jpn.J.Appl.Phys.. Vol.40,No.4B(in press). (2001)
• [文献書誌] Y.Yamamoto et al: "Surface Adsorption of WF_6 on Si and SiO_2 in Selective W-CVD"Abs.of 197th Meeting of the Electrochemical Society. 928 (2000)
• [文献書誌] D.Lee et al: "In-Situ Impurity Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth Using Ultraclean LPCVD"Abs.of 2000 International Conf.on Solid State Devices and Materials. 206-207 (2000)
• [文献書誌] M.Fujiu et al: "Thermal Stability of Si and C Atomic Layers Formed on Ge(100) in Silane and Methylsilane Reactions"Abs.of American Vacuum Society 47th Internatonal Symposium : Vacuum Thin Films, Surafces/Interfaces, Processing & NANO-6. TF-MoM4 (2000)
• [文献書誌] J.Murota et al: "Atomically Controlled Processing for Fabrication of Si-based Ultimate-Small Devices"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 131-134 (2000)
• [文献書誌] O.Jintsugawa et al: "Thermal Nitridation of Ultrathin Silicon Dioxide Films Using NH_3 Gas"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 227-230 (2000)
• [文献書誌] M.Fujiu et al: "Surface Reaction of Silane and Methylsilane on Ge(100)"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 262-265 (2000)
• [文献書誌] D.Lee et al: "Epitaxial Growth and Electrical Characteristics of Impurity-Doped Si_<1-x-y>Ge_xC_y on Si(100) by Ultraclean LPCVD"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 270-273 (2000)
• [文献書誌] Y.Yamamoto et al: "Surface Adsorption and Reaction on Si and SiO_2 at Very Low Temperature in a WF_6-SiH_4 Gas System"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 294-297 (2000)
• [文献書誌] B.Tillack: "Atomic Layer Doping of SiGe for Heterojunction Devices"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 27-30 (2000)
• [文献書誌] T.Yamashiro et al: "Fabrication of 0.1um MOSFETs with Super Self-Aligned Ultrashallow Junction Formed by Selective In-Situ Doped Si_<1-x>Ge_x CVD"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. II-07 (2001)
• [文献書誌] B.Tillack et al: "SiGe : C Epitaxy for HBT Application"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. III-01 (2001)
• [文献書誌] D.Knoll et al: "Investigation of Epitaxy Loading and Geometry Effects in an 8-Inch SiGe : C BiCMOS Technology"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. IV-04 (2001)
• [文献書誌] J.Murota: "Atomically Controlled Processing for Group IV Semiconductors"Abs.of the 9th European Conference on Applications of Surface and Interface Analysis. (invited). (2001)
• [文献書誌] S.Kobayashi et al.: "Segregation and Diffusion of Phosphorus from Doped Si_<1-x>Ge_x Films into Silicon"J. Appl. Phys. 86,10. 5480-5483 (1999)
• [文献書誌] Y.shimamune et al.: "Atomic-Layer Adsorption of P on Si(100) and Ge(100) by PH_3 Using an Ultraclean Low-Pressure Chemical Vapor Deposition"Appl. Surf. Sci.. (in press). (2000)
• [文献書誌] A.Ichikawa et al.: "Epitaxial Growth of Si_<1-x-y>Ge_xC_y Film on Si(100) in a SiH_4-GeH_4-CH_3SiH_3 Reaction"Thin Solid Films. (accepted).
• [文献書誌] S.Kobayashi et al.: "Diffusion and Segregation of Impurities from Doped Si_<1-x>Ge_x Films into Silicon"Thin Solid Films. (accepted).
• [文献書誌] T.Tsuchiya et al.: "Drain Leakage Current and Instability of Drain Current in Si/Si_<1-x>Ge_x MOSFETs"Thin Solid Films. (accepted).
• [文献書誌] H.Takeuchi et al.: "Etching of Si_<1-x>Ge_x Epitaxial Films Using an ECR Chlorine Plasma"Abs. Of 1999 Spring Meeting, The European Materials Research Society. (D-III .2). (1999)
• [文献書誌] S.Ishida et al.: "Micro-Roughness Control of the Si_<1-x>Ge_x Surfaces Treated with Buffered Hydrofluoric Acid"Abs. Of Int. Joint Conf. On Si Epitaxy and Heterostructures. PI-2 (1999)
• [文献書誌] J.Murota et al.: "CVD Si_<1-x>Ge_x Epitaxial Growth and Its Application to MOS Devices"Proc. Of the SPIE Conference on Microelectronic Device Technology III. 3881. 33-45 (1999)
• [文献書誌] J.Murota et al.: "SiGe Processing and its Applicaton to MOS Devices"Abs. Of the 1st Microelectronics Workshop. 30-31 (1999)
• [文献書誌] J.Murota et al.: "Atomically Controlled Processing for Si-Based Ultrasmall Devices"Ext. Abs. Of 18th Symposium on Future Electron Devices. 65-70 (1999)
• [文献書誌] T.Kikuchi et al.: "Super Self-Aligned Processing for Sub 0.1μm MOS Devices Using Selective Si_<1-x>Ge_x CVD"Proc. Of the First International Symposium on ULSI Process Integration. PV99-18. 147-153 (1999)
• [文献書誌] T.Matsuura et al.: "Atomic-Order Side-Wall Passivation with Nitrogen in ECR Plasma Etching of Si"Proc. Of the Plasma Etching Processes for Sub-Quarter Micron Devices. PV99-30(in press). (2000)
• [文献書誌] B.Tillack et al.: "Atomic Layer Doping of SiGe-Fundamentals and Device Applications"Abs. Of Int.Joint Conf. On Si Epitaxy and Heterostructures. E-5 (1999)
• [文献書誌] D.Knoll et al.: "Comparison of SiGe and SiGe: C Heterojunction Bipolar Transistors"Abs. Of Int. Joint Conf. On Si Epitaxy and Heterostructures. J-2 (1999)
• [文献書誌] B.Heinemann et al.: "Comparative Analysis of Minority Carrier Ttransport in npn Bipolar Transistors with Si, Si_<1-x>Ge_x, and Si_<1-y>C_y Base Layers"Abs. Of Int. Joint Conf. On Si Epitaxy and Heterostructures. J-3 (1999)
• [文献書誌] J.Murota et al.: "Future Trends in Microelectronics Process Technology for Sub-0.1μm Silicon Devices, pp.79-90)"John Wiley & Sons,Inc.. 12 (1999)